Waveguide Integrated Deuterated Silicon Nitride (SiN:D) Microdisk Resonators for Nonlinear Photonics

Zeru Wu,Yujie Chen,Zihan Xu,Lin Liu,Hui Chen,Yanfeng Zhang,Siyuan Yu

2019-01-01

Abstract:Waveguide-coupled SiN:D microdisk resonators with high quality factors of about 0.7 million throughout 1525–1575 nm wavelength are fabricated. Four-wave mixing parametric oscillation with multiple sidebands is observed under high-power pumping.

What problem does this paper attempt to address?

Strong Nonlinear Optics In On-Chip Coupled Lithium Niobate Microdisk Photonic Molecules

Min Wang,Ni Yao,Rongbo Wu,Zhiwei Fang,Shilong Lv,Jianhao Zhang,Jintian Lin,Wei Fang,Ya Cheng

DOI: https://doi.org/10.1088/1367-2630/ab97ea

2020-01-01

New Journal of Physics

Abstract:High-quality lithium niobate (LN) thin-film microresonators provide an ideal platform for on-chip nonlinear optical applications. The strict phase-matching condition should be satisfied for an efficient nonlinear optical process, which requires dispersion engineering with an LN microresonator. However, this is challenging in single microresonator, resulting from the fabrication error. Here, we demonstrate strong nonlinear effects in a photonic molecule (PM) structure composed of two strongly coupled lithium niobate microdisks. The size mismatch of the microdisks enables phase matching by employing coupling-induced frequency splitting to compensate for the material and geometric dispersion. With a continuous wave excitation, rich nonlinear optical phenomena including cascaded four-wave mixing and stimulated Raman scattering were observed around the second harmonic signal. Meanwhile, an ultra-high four-wave mixing absolute conversion efficiency of 14% as obtained when the second harmonic signal power is at microwatts level. The LN PM is of great potential for applications in nonlinear integrated photonics.
Simultaneous generation of four-wave mixing and stimulated Raman scattering in coupled lithium niobate microdisks mediated by second harmonic generation

Min Wang,Ni Yao,Rongbo Wu,Zhiwei Fang,Shilong Lv,Jianhao Zhang,Lingling Qiao,Jintian Lin,Wei Fang,Ya Cheng

2018-01-01

Abstract:High quality lithium niobate thin film microresonators provide an ideal platform for on-chip nonlinear optics applications. However, the phase matching condition for efficient parametric process sets a high requirement for fabrication control. Here we demonstrate a photonic molecular structure composed of two strongly coupled lithium niobate microdisks of different diameters fabricated using femtosecond laser micromachining and focused ion beam milling. With a continuous wave excitation, rich nonlinear optical processes including cascaded four-wave mixing and stimulated Raman scattering were observed around the second harmonic wavelength. Our results indicate that the coupled microdisks form a superior system for nonlinear optical process.
Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

Renhong Gao,Haisu Zhang,Fang Bo,Wei Fang,Zhenzhong Hao,Ni Yao,Jintian Lin,Jianglin Guan,Li Deng,Min Wang,Lingling Qiao,Ya Cheng

DOI: https://doi.org/10.1088/1367-2630/ac3d52

2021-01-01

New Journal of Physics

Abstract:Microresonators of ultrahigh quality (Q) factors represent a crucial type of photonic devices aiming at ultra-high spectral resolution, ultra-high sensitivity to the environmental perturbations, and efficient nonlinear wavelength conversions at low threshold pump powers. Lithium niobate on insulator (LNOI) microdisks of high Q factors are particularly attractive due to its large second-order nonlinear coefficient and strong electro-optic property. In this letter, we break through the long standing bottleneck in achieving the Q factors of LNOI microresonators beyond 108, which approaches the intrinsic material absorption limit of lithium niobate (LN). The ultra-high Q factors give rise to a rich family of nonlinear optical phenomena from optical parametric oscillation (OPO) to harmonics generation with unprecedented characteristics including ultra-low pump threshold, high wavelength conversion efficiency, and ultra-broad operation bandwidth. Specifically, the threshold of OPO is measured to be only 19.6 μW, and the absolute conversion efficiency observed in the second harmonic generation reaches 23%. The record-breaking performances of the on-chip ultra-high Q LNOI microresonators will have profound implication for both photonic research and industry.
Monolithic Integration of a Lithium Niobate Microresonator with a Free-Standing Waveguide Using Femtosecond Laser Assisted Ion Beam Writing.

Zhiwei Fang,Yingxin Xu,Min Wang,Lingling Qiao,Jintian Lin,Wei Fang,Ya Cheng

DOI: https://doi.org/10.1038/srep45610

IF: 4.6

2017-01-01

Scientific Reports

Abstract:We demonstrated integrating a high quality factor lithium niobate microdisk resonator with a free-standing membrane waveguide. Our technique is based on femtosecond laser direct writing which produces the pre-structure, followed by focused ion beam milling which reduces the surface roughness of sidewall of the fabricated structure to nanometer scale. Efficient light coupling between the integrated waveguide and microdisk was achieved, and the quality factor of the microresonator was measured as high as 1.67 × 105.
Vertically Stacked Silicon Nitride Coupled Microdisk Resonators

Chenxuan Yin,Jian Jian,Zengkai Shao,Yanfeng Zhang,Pengfei Xu,Lin Liu,Chunchuan Yang,Hui Chen,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2015.asu2a.27

2015-01-01

Abstract:We investigate novel vertically-coupled SiNx microdisk resonators formed by multiple SiNx microdisk resonators stacked on top of each other separated by interleaving SiO2 layers with experimental results on optical coupling near 1550 nm.
Photonic Damascene Process for Integrated High-Q Microresonator Based Nonlinear Photonics

Martin H. P. Pfeiffer,Arne Kordts,Victor Brasch,Michael Zervas,Michael Geiselmann,John D. Jost,Tobias J. Kippenberg

DOI: https://doi.org/10.1364/OPTICA.3.000020

2015-11-18

Abstract:High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD) has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with $1.35\,\mu\mathrm{m}$ thick waveguides and optical Q factors of $3.7\times10^{6}$ and demonstrate single temporal dissipative Kerr soliton (DKS) based coherent optical frequency comb generation. Our newly developed process is interesting also for other material platforms, photonic integration and mid infrared Kerr comb generation.

Optics
Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Zhihua Tu,Daru Chen,Hao Hu,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.3390/app10228087

2020-01-01

Applied Sciences

Abstract:Optical communication using the 2 μm wavelength band is attracting growing attention for the sake of mitigating the information ‘capacity crunch’ on the way, where on-chip nonlinear waveguides can play vital roles. Here, silicon-rich nitride (SRN) ridge waveguides with different widths and rib heights are fabricated and measured. Linear characterizations show a loss of ~2 dB/cm of the SRN ridge waveguides and four-wave mixing (FWM) experiments with a continuous wave (CW) pump reveal a nonlinear refractive index of ~1.13 × 10−18 m2/W of the SRN material around the wavelength 1950 nm. With the extracted parameters, dimensions of the SRN ridge waveguides are optimally designed for improved nonlinear performances for the 2 μm band, i.e., a maximal nonlinear figure of merit (i.e., the ratio of nonlinearity to loss) of 0.0804 W−1 or a super-broad FWM bandwidth of 518 nm. Our results and design method open up new possibilities for achieving high-performance on-chip nonlinear waveguides for long-wavelength optical communications.
High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Ping Yu,Huiye Qiu,Hui Yu,Feiqing Wu,Zhuoyuan Wang,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2016.2581205

IF: 2.6

2016-01-01

IEEE Photonics Technology Letters

Abstract:We demonstrate the design, fabrication, and characterization of side-coupled airmode nanobeam photonic crystal cavities in silicon-on-insulator platform. Results show that repeatable devices achieve similar high loaded quality factors (>10(4)) and large optical energy ratio in low refractive region. The unload Q-factors of the fabricated cavities are estimated to exceed 10(5). With side-coupled configuration, high transmission of through port is achieved with typical insertion loss less than 0.5 dB. Wavelength shifts of the measured resonances with respect to the designed values are observed and well explained by considering the fluctuation of etching depth. The demonstrated side-coupled airmode nanobeam photonic crystal cavities may find their applications in ultracompact integrated photonics, especially for on-chip photonic sensor, notch filter, or optical switch.
Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Hao Hu,Leif K. Oxenlowe,Lars H. Frandsen

DOI: https://doi.org/10.1364/oe.27.023775

IF: 3.8

2019-01-01

Optics Express

Abstract:A silicon/silicon-rich nitride hybrid-core waveguide has been proposed and experimentally demonstrated for nonlinear applications to fill the gap between the pure silicon waveguide and the pure silicon nitride waveguide with respect to the nonlinear properties. The hybrid-core waveguide presented here leverages the advantages of the silicon and the silicon-rich nitride waveguide platforms, showing a large nonlinearity γ of 72 ± 5 W-1 m-1 for energy-efficient four-wave mixing wavelength conversion. At the same time, the drawbacks of the material platforms are dramatically mitigated, exhibiting a reduced two-photon absorption coefficient βTPA of 0.023 cm/GW resulting in an increased nonlinear figure-of-merit as large as 21.6. A four-wave-mixing conversion efficiency as large as -5.3 dB has been achieved with the promise to be larger than 0 dB. These findings are strong arguments supporting the silicon/silicon-rich nitride hybrid-core waveguide to be used for energy-efficient nonlinear photonic applications.
Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Zhihua Tu,Qiang Jin,Xibin Li,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.001772

2018-01-01

Abstract:Mid-infrared (MIR) integrated waveguides with strong local field enhancement and relatively low loss have shown their potential in nonlinear optical applications. We present a novel highly nonlinear silicon hybrid waveguide by setting an insulator-metal-insulator structure with [2-[4-(dimethylamino)phenyl]-3-([4-(dimethylamino)phenyl]ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile] (DDMEBT) and silver materials into the silicon slot. The mode field is strongly confined in the DDMEBT layers via the surface plasmon polariton effect. Two rectangular silicon nanobridges are used to further confine the optical field and reduce the loss simultaneously. The waveguide dimensions are optimized to obtain a figure of merit as high as 0.55 at 2.1 mu m and a zero-dispersion wavelength of 2.06 mu m. In a 6.6-mm-long waveguide, a maximum four-wave mixing efficiency of -6.65 dB and a bandwidth of 512 nm (1.894-2.406 mu m) can be simultaneously obtained, pumped by a 2.104-mu m source with a power of only 500 mW. Our designed waveguide exhibits excellent overall performance for nonlinear optical applications such as all-optical signal processing in the MIR band. (C) 2018 Optical Society of America
Silicon Micro-Cavities And Their System Applications

Min Qiu,Qiang Li,Ziyang Zhang,Fangfei Liu,Qingjiang Chang,Yikai Su

DOI: https://doi.org/10.1117/12.813540

2009-01-01

Abstract:We experimentally demonstrate resonance-splitting and enhanced notch as a result of the mutual mode coupling in silicon ring resonator. Dense wavelength conversions, wavelength multicasting and optical up-converter are demonstrated in the split silicon ring resonator. A temporal differentiator and format conversion from NRZ to AMI are demonstrated utilizing the filtering effect of ring resonator. Photonic phase shifter and delay line are demonstrated utilizing the phase shift of ring resonator.
Integration of fiber coupled high-Q silicon nitride microdisks with atom chips

Paul E. Barclay,Benjamin Lev,Kartik Srinivasan,Oskar Painter,Hideo Mabuchi

DOI: https://doi.org/10.1063/1.2356892

2006-09-28

Abstract:Micron scale silicon nitride (SiN_x) microdisk optical resonators are demonstrated with Q = 3.6 x 10^6 and an effective mode volume of 15 (\lambda / n)^3 at near visible wavelengths. A hydrofluoric acid wet etch provides sensitive tuning of the microdisk resonances, and robust mounting of a fiber taper provides efficient fiber optic coupling to the microdisks while allowing unfettered optical access for laser cooling and trapping of atoms. Measurements indicate that cesium adsorption on the SiN_x surfaces significantly red-detunes the microdisk resonances. A technique for parallel integration of multiple (10) microdisks with a single fiber taper is also demonstrated.

Quantum Physics,Optics
300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Xuguang Zhang,Yuxin Liang,Yujun Chen,Bitao Shen,Jiahui Huang,Chenghao Lao,Yichen Wu,Zhihui Li,Dapeng Liu,Haowen Shu,Weiwei Hu,Xingjun Wang,Naidi Cui,Lin Chang

DOI: https://doi.org/10.1063/5.0221409

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Silicon nitride (Si3N4) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3N4 attracts significant attention and facilitates a wide range of applications in integrated photonics. In this work, we demonstrate the foundry fabrication of a 300-nm-thick 8-in. wafer-scale Si3N4 platform, with a microresonator intrinsic quality factor of up to 15x106, corresponding to an ultralow loss of 2.2 dB/m. Leveraging this platform, we develop a mature process design kit, achieving a single-mode waveguide propagation loss of less than 5 dB/m, an edge coupler loss of 1.3 dB, and an insertion loss of 0.07 dB for multimode interference couplers. Utilizing the processed Si3N4 chip, we realize a hybrid integrated tunable external cavity laser with a tuning range from 1534 to 1602 nm, a record-high side-mode suppression ratio of up to 76 dB, an optical power of 26 mW, and an intrinsic linewidth of down to 314 Hz. Our work lays a solid foundation for the further development of applications, including nonlinear optics, quantum optics, optical communications, and ranging.
Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

Jeff Chiles,Nima Nader,Daniel D. Hickstein,Su Peng Yu,Travis Crain Briles,David Carlson,Hojoong Jung,Jeffrey M. Shainline,Scott Diddams,Scott B. Papp,Sae Woo Nam,Richard P. Mirin

DOI: https://doi.org/10.1364/OL.43.001527

2018-02-04

Abstract:We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\times 10^6 $ at 1552 nm, and $>1.2\times 10^6$ throughout $\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

Optics
Fabrication of the High-Q Si 3 N 4 Microresonators for Soliton Microcombs

Shuai Wan,Rui Niu,Jin-Lan Peng,Jin Li,Guang-Can Guo,Chang-Ling Zou,Chun-Hua Dong

DOI: https://doi.org/10.3788/col202220.032201

IF: 2.56

2022-01-01

Chinese Optics Letters

Abstract:The microresonator-based soliton microcomb has shown a promising future in many applications. In this work, we report the fabrication of high quality [Q) Si 3 N 4 microring resonators for soliton microcomb generation. By developing the fabrication process with crack isolation trenches and annealing, we can deposit thick stoichiometric Si 3 N 4 film of 800 nm without cracks in the central area. The highest intrinsic Q of the Si 3 N 4 microring obtained in our experiments is about 6 × 10 6 ,corresponding to a propagation loss as low as 0.058 dBm/cm. With such a high Q film, we fabricate microrings with the anomalous dispersion and demonstrate the generation of soliton microcombs with 100 mW on-chip pump power, with an optical parametric oscillation threshold of only 13.4 mW. Our Si 3 N 4 integrated chip provides an ideal platform for researches and applications of nonlinear photonics and integrated photonics.
Geometry optimization for dark soliton combs in thin multimode silicon nitride microresonators

Yaojing Zhang,Shuangyou Zhang,Toby Bi,Pascal Del'Haye

DOI: https://doi.org/10.1364/OE.503637

2023-12-04

Abstract:Silicon nitride (Si3N4) has been well established as an ultralow-loss material for integrated photonics, particularly for the generation of dissipative Kerr soliton frequency combs, enabling various applications for optical metrology, biological imaging, and coherent telecommunications. Typically, bright soliton generation in Si3N4 devices requires thick (>600 nm) films to fulfill the condition of anomalous dispersion at telecom wavelengths. However, thick films of ultralow-loss Si3N4 (>400 nm) often suffer from high internal stress, leading to cracks. As an alternative approach, thin Si3N4 films (<400 nm) provide the advantage of one-step deposition and are widely applied for commercial use. Here, we provide insights into engineering an integrated Si3N4 structure that achieves optimal effective nonlinearity and maintains a compact footprint. A comparative analysis of Si3N4 resonators with varying waveguide thicknesses is conducted and reveals that a 400-nm thin Si3N4 film emerges as a promising solution that strikes a balance among the aforementioned criteria. Based on a commercially available 400-nm Si3N4 film, we experimentally demonstrate the generation of low-noise coherent dark pulses with a repetition rate of 25 GHz in a multimode Si3N4 resonator. The compact spiral-shaped resonator has a footprint of 0.28 mm2 with a high-quality factor of 4 × 106. Our demonstrated dark combs with mode spacings of tens of GHz have applications in microwave photonics, optical spectroscopy, and telecommunication systems.
Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Houssein El Dirani,Laurene Youssef,Camille Petit-Etienne,Sebastien Kerdiles,Philippe Grosse,Christelle Monat,Erwine Pargon,Corrado Sciancalepore

DOI: https://doi.org/10.1364/OE.27.030726

2019-10-14

Abstract:Efficient nonlinear phenomena in integrated waveguides imply the realization in a nonlinear material of tightly confining waveguides sustaining guided modes with a small effective area with ultra-low propagation losses as well as high-power damage thresholds. However, when the waveguide cross-sectional dimensions keep shrinking, propagation losses and the probability of failure events tend to increase dramatically. In this work, we report both the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼107 in the C band. The present technology results in very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds. In particular, we developed here an optimized fully subtractive process introducing a novel chemical-physical multistep annealing and encapsulation fabrication method, resulting in high quality Si3N4-based photonic integrated circuits for energy-efficient nonlinear photonics and quantum optics.
Optical Frequency Comb in Silicon Nitride Microresonator(invited)

Li Jin,Wang Piyu,Wang Zhengyu,Niu Rui,Wan Shuai,Guo Guangcan,Dong Chunhua

DOI: https://doi.org/10.3788/irla20220302

2022-01-01

Infrared and Laser Engineering

Abstract:Optical resonators with high quality (Q) factor can restrict light in a small mode volume for a long time, greatly enhancing the interaction between light and matter, and becoming an important component with great potential in integrated optical devices. Focusing on the silicon nitride material platform, which is currently widely used in the field of integrated nonlinear optics, in order to solve the problem of large scattering loss in the large size on-chip silicon nitride microring resonator caused by the stitching error, the surface roughness and other factors, a series of fabrication process improvements were made to improve the quality factor of the large size silicon nitride microring resonator. The results show that the scattering loss of the silicon nitride waveguide can be effectively reduced by thin film redeposition process, and the intrinsic Q of the large size silicon nitride microring resonator with a radius of 560 μm is increased by 26% on average. Thanks to the improved Q of the large size microring resonator, the frequency comb with the repetition rate of 40 GHz is realized in the on-chip silicon nitride microring resonator.
All-optical tuning of a diamond micro-disk resonator on silicon

Paul Hill,Charalambos Klitis,Benoit Guilhabert,Marc Sorel,Erdan Gu,Martin D. Dawson,Michael J. Strain

DOI: https://doi.org/10.48550/arXiv.1907.05492

2019-07-12

Abstract:High quality integrated diamond photonic devices have previously been demonstrated in applications from non-linear photonics to on-chip quantum optics. However, the small sample sizes of single crystal material available, and the difficulty in tuning its optical properties, are barriers to the scaling of these technologies. Both of these issues can be addressed by integrating micron scale diamond devices onto host photonic integrated circuits using a highly accurate micro-assembly method. In this work a diamond micro-disk resonator is integrated with a standard single mode silicon-on-insulator waveguide, exhibiting an average loaded Q-factor of 3.1x10^4 across a range of spatial modes, with a maximum loaded Q-factor of 1.05x10^5. The micron scale device size and high thermal impedance of the silica interface layer allow for significant thermal loading and continuous resonant wavelength tuning across a 450 pm range using a mW level optical pump. This diamond-on-demand integration technique paves the way for tunable devices coupled across large scale photonic circuits.

Optics,Applied Physics
High-Q Silicon Nitride Few-Mode Microdisk Resonators

Yuan Chen,Zhiqiang Fan,Yang,Yue Lin,Di Jiang,Xiang Li,Qi Qiu

DOI: https://doi.org/10.1109/lpt.2023.3344875

IF: 2.6

2023-01-01

IEEE Photonics Technology Letters

Abstract:High-Q silicon nitride microdisk resonators (MDRs) with fewer resonant modes are proposed and experimentally demonstrated. The proposed MDRs consist of microdisks and optimized bent bus waveguides. The introduction of asymmetric directional couplers (DCs) successfully destroys part of high-order modes resonance and enhances that of TE1 and TE2 radial modes so that the spectral purity of the MDRs is improved. In this way, guided-modes propagate in MDRs with low loss and > 10(6) Q-factors are obtained. The maximum measured loaded Q-factor and intrinsic Q-factor is 4.7 x 10(6 )and 5.9 x 10(6), respectively. The minimum wavelength interval between two notches is 0.68 nm. The proposed few-mode MDRs are realized with one step silicon nitride etching process provided by a multiproject wafer foundry and they have broad application prospects in integrated microwave photonic systems, sensing, and other fields.

Waveguide Integrated Deuterated Silicon Nitride (SiN:D) Microdisk Resonators for Nonlinear Photonics

Strong Nonlinear Optics In On-Chip Coupled Lithium Niobate Microdisk Photonic Molecules

Simultaneous generation of four-wave mixing and stimulated Raman scattering in coupled lithium niobate microdisks mediated by second harmonic generation

Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

Monolithic Integration of a Lithium Niobate Microresonator with a Free-Standing Waveguide Using Femtosecond Laser Assisted Ion Beam Writing.

Vertically Stacked Silicon Nitride Coupled Microdisk Resonators

Photonic Damascene Process for Integrated High-Q Microresonator Based Nonlinear Photonics

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Silicon Micro-Cavities And Their System Applications

Integration of fiber coupled high-Q silicon nitride microdisks with atom chips

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

Fabrication of the High-Q Si 3 N 4 Microresonators for Soliton Microcombs

Geometry optimization for dark soliton combs in thin multimode silicon nitride microresonators

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Optical Frequency Comb in Silicon Nitride Microresonator(invited)

All-optical tuning of a diamond micro-disk resonator on silicon

High-Q Silicon Nitride Few-Mode Microdisk Resonators