Fast, multi‐bit and Vis‐Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2/2D‐perovskite van der Waals Heterojunction
Haojie Lai,Zhengli Lu,Yueheng Lu,Xuanchun Yao,Xin Xu,Jian Chen,Yang Zhou,Pengyi Liu,Tingting Shi,Xiaomu Wang,Weiguang Xie
DOI: https://doi.org/10.1002/adma.202208664
IF: 29.4
2022-12-03
Advanced Materials
Abstract:Nonvolatile optoelectronic memory (NVOM) integrating the functions of optical sensing and long‐term memory can efficiently process and store a large amount of visual scene information, which has become the core requirement of multiple intelligence scenarios. However, realizing NVOM with Vis‐infrared broadband response is still challenging. Herein, we realize the room temperature Vis‐infrared broadband NVOM based on few‐layer MoS2/2D Ruddlesden–Popper Perovskite (2D‐RPP) van der Waals heterojunction. It's found that the 2D‐RPP converted the initial n‐type MoS2 into p‐type and facilitate hole transfer between them. Furthermore, the 2D‐RPP rich of interband states serves as an effective electron trapping layer as well as broadband photoresponsive layer. As a result, the dielectric‐free MoS2/2D‐RPP heterojunction enables the charge to transfer quickly under external field, which enables a large memory window (104 V), fast write speed of 20 μs, and optical programmable characteristics from visible light (405 nm) to telecommunication wavelengths (i.e., 1550 nm) at room temperature. Trapezoidal optical programming can produce up to 100 recognizable states (>6 bits), with operating energy as low as 5.1 pJ per optical program. Our results provide a route to realize fast, low power, multi‐bit optoelectronic memory from visible to the infrared wavelength. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology