Abstract:Inspired by the recent achievements of the two-dimensional (2D) sub-5 nm MoS2 field effect transistors (FETs), we use the ab initio quantum-transport methods to simulate the transport properties of the sub-5 nm gate-length monolayer (ML) MoS2 MOSFETs. We find that the ML MoS2 double-gated MOSFETs (DGFETs) with the 1, 3, and 5 nm gate length fail to meet the on-state current requirements in the International Technology Roadmap for Semiconductors (ITRS) for high-performance (HP) devices. However, both the ML MoS2n- and p-DGFETs with 5 nm gate length can address the requirements in the ITRS for low-power (LP) applications in terms of on-state current, effective delay time, and power-delay products (PDPs). After the introduction of the negative capacitance dielectric layer, the ML MoS2p-DGFETs can satisfy the LP application requirements of ITRS until the gate length scales down to 3 nm. Hence, ML MoS2 remains a potential channel candidate for LP applications in the sub-5 nm scale.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00840?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00840</a>.On-state current, SS, delay time and power-delay products as a function of the UL length in the n- and p-type MoS2 DGFETs, and transfer characteristics of the DG n- and p-type UL-free ML MoS2 DGFET with and without the negative dielectric layer (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00840/suppl_file/el0c00840_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Sub-5 Nm Monolayer BiH Transistors

High-performance Sub-10 Nm Monolayer Bi2O2Se Transistors

Sub-5-nm Monolayer Boron Pnictide MOSFETs for N- and P-Type High-Performance Applications

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

Sub-5 Nm Gate Length Monolayer MoTe2 Transistors

Sub-5 Nm Monolayer Arsenene and Antimonene Transistors

Sub-5 Nm Monolayer Black Phosphorene Tunneling Transistors.

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

Sub-5 nm Monolayer MoS 2 Transistors toward Low-Power Devices

Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices

Tunneling field-effect transistors with two-dimensional BiN as the channel semiconductor

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

Performance Limit of All-Wrapped Monolayer MoS2 Transistors.

Sub-5 nm Gate-Length Monolayer Selenene Transistors

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3