Control of Wafer Scanners: Methods and Developments

M.F. Heertjes,H. Butler,N.J. Dirkx,S.H. van der Meulen,R. Ahlawat,K. O’Brien,J. Simonelli,K-T. Teng,Y. Zhao
DOI: https://doi.org/10.23919/ACC45564.2020.9147464
2020-01-01
Abstract:In this tutorial paper, control design aspects of wafer scanners used in the semiconductor industry will be highlighted. At the same time, challenges for control design development as to meet the ever increasing demands on accuracy and speed are presented. Mechatronic systems that will be discussed are: (a) the light source needed to generate the ultraviolet light that is used for wafer exposure, (b) the optical and metrology systems needed for accurate measurement and imaging, and (c) the reticle and wafer stage systems needed for accurate and fast positioning. The control challenges associated with these systems mainly involve dealing with: (a) rejection of high frequency aliased disturbances, (b) large-scale or fast-updated (state) reconstruction, (c) vibration control and isolation in view of structural vibrations and disturbances, (d) inherent design tradeoffs like Bode's sensitivity integral and gain-phase relationships, (e) multivariable plant identification of (quasi-static) deformations and structural dynamics for point-of-interest control, and (f) thermal modelling, model reduction, and the control of (local) time-varying deformation. Results will be discussed using representative examples.
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