Abstract:The development of silicon-based high-power devices, e.g. IGBTs, has reached its application limits in terms of high-temperature and high-frequency harsh operating conditions. Wide bandgap (WBG) power devices (such as silicon carbide, SiC) are currently one of the most promising power devices for replacement. Due to their intrinsic bandgap, SiC high-power devices have proven their superior performance in high-frequency and high-temperature working scenarios. With the increasing demand of high-power semiconductor devices in industries such as new-energy vehicles, high-speed railway systems, and aerospace, the conditions of SiC power semiconductor devices have become more and more complex, which brings challenges to electronic packaging technology. Due to thermal management and reliability requirements for SiC power devices, customized advanced heat dissipation structures, and high-temperature soldering materials have been introduced in power device packaging technology. The reliability verification of these new electronic packaging technologies is often time-consuming and labor-intensive, so designers hope to obtain results consistent with actual experimental data through the utilization of computer-aided design methods, such as finite-element analysis (FEA), which will greatly reduce the number of iterations of physical prototypes and the development time. This article reviewed and discussed the application of FEA in the latest packaging technology, including the extraction of the thermal resistance network of the SiC power module, the thermal simulation of the novel efficient cooling structure, the thermo-mechanical analysis of the high-temperature packaging material, and the long-term reliability FEA of the SiC power devices.

A review of SiC power module packaging: Layout, material system and integration

A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

Comparative Evaluation and Analysis of Packaging Material System and Parallel Package Method Based on Interleaved Planar SiC Power Module

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package

Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement

SiC based Technology for High Power Electronics and Packaging Applications

A High Performance Embedded SiC Power Module Based on a DBC-Stacked Hybrid Packaging Structure

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

A Review of System-in-Package Technologies: Application and Reliability of Advanced Packaging

Design and evaluation of press-pack SiC MOSFET

Overview of Finite-Element Analysis in Simulation of SiC Power Device Packaging

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

Advancements in SiC-Reinforced Metal Matrix Composites for High-Performance Electronic Packaging: A Review of Thermo-Mechanical Properties and Future Trends

Comparative Evaluations and Failure Modes of Wire-Bonding Packaged SiC, Si, and Hybrid Power Modules

Design, Packaging and Evaluation of an All-SiC-Based Four-Level ANPC Power Module

Review of Silicon Carbide Processing for Power MOSFET

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

A 2.5D Multichip SiC MOSFET Power Module with Low Parasitic Inductance and High Dynamic Current Sharing Performance

Development and Characterisation of Pressed Packaging Solutions for High-Temperature High-Reliability SiC Power Modules.

Performance Optimization of A 1.2kv SiC High Density Half Bridge Power Module in 3D Package

Design and Demonstration of 3D-Stacked Packaging SiC Power Module with Low Parasitic Inductance and Low Thermal Resistance