Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Phosphorus Diffusion in Germanium Following Implantation and Excimer Laser Annealing

Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Numerical Analysis of Ultrashort Pulse Laser-Induced Thermomechanical Response of Germanium Thin Films

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

The Effects of Carbon on Phosphorus Diffusion and Activation in Ge

Liquid-Phase Diffusion of Phosphorus Atoms in Laser-Doped Crystalline Silicon Solar Cells

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Impact of post-ion implantation annealing on Se-hyperdoped Ge

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Numerical Simulations of Germanium Nanofilm under Femtosecond Pulse Laser Heating

Dislocation Analysis of Germanium Wafers under 1080 Nm Laser Ablation.

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Analytical Modeling of Nonlinear Diffusion of Arsenic in Silicon

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n$^{+}$/p Junctions

Chemical Impurities and Lattice Defects in High-Purity Germanium