Abstract:The reversible switching between the amorphous and crystalline phases of Ge 2 Sb 2 Te 5 (GST) is investigated with ab initio molecular dynamics. We apply different quench rates (-16 K/ps, -5 K/ps, -2 K/ps, and -0.45 K/ps) and different annealing temperatures (500 K, 600 K, 700 K, and 800 K) to amorphize and crystallize GST respectively. Results show that the generated amorphous is strongly dependent on the quench rate. For -16 K/ps and -5 K/ps, generated amorphous samples have different density of crystal seeds, higher in the later. The amorphous structure formed at -2 K/ps contains a single crystalline cluster, while that formed at the quench rate of -0.45 K/ps had sufficient time to completely crystallize the amorphous phase. Annealing the amorphous systems formed at different rates shows that crystallization depends both on the annealing temperature and on the structure of the initial system (i.e., whether or not it contains crystalline clusters or crystal seeds). At 500 K, formation of crystalline clusters occurs readily within a few ps while the rate at which they grow is slow, taking 0.9 ns to complete the crystallization. In contrast, crystalline cluster formation is inhibited at 800 K. In the intermediate temperature range, both crystalline cluster formation and growth occur within a few hundred ps indicating that these temperatures leads to the fastest crystallization. The crystallization of a 63-atom at ~900 K resulted in a highly relaxed crystal structure showing a clear tendency for separation of Ge and Sb species in layers. This model also indicates a tendency of segregation of vacancies, suggesting that vacancy layering may play a key role in the crystallization process.

Unique amorphous structure of Ge2Sb2Te5 alloy

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Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

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Mapping the band structure of GeSbTe phase change alloys around the Fermi level

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Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

Local Structure of Amorphous (GeTe)x(Sb2Te3) Films

Structural Signature and Transition Dynamics of Sb2Te3 Melt Upon Fast Cooling

Impact of the local atomic structure on the thermal conductivity of amorphous Ge2Sb2Te5

Inherent Simple Cubic Lattice Being Responsible for Ultrafast Solid-Phase Change of Ge2Sb2Te5

Structural and optical properties of Ge60Te40: experimental and theoretical verification

Manipulation of Dangling Bonds of Interfacial States Coupled in GeTe-rich GeTe/Sb2Te3 Superlattices

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study

Local- and Intermediate-Range Structures on Ordinary and Exotic Phase-Change Materials by Anomalous X-ray Scattering