Abstract:Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloying with metals, often at concentrations greater than 10 at. % and using non-equilibrium methods. Since switching PCMs between the low-resistance crystalline and high-resistance amorphous states requires a heating cycle, the stability of metal-incorporated GeTe (<math> Ge 0.5 − x M x Te 0.5</math>) films is also critical to practical implementation of these materials in electronic and optoelectronic devices. In this work, we use both density-functional theory and experimental characterization methods to probe the solubility and critical properties of <math> Ge 0.5 − x M x Te 0.5</math> films. Using first-principles calculations, we determine the enthalpy of formation for GeTe with 2.08, 4.17, and 6.25 at. % of Cu, Fe, Mn, Mo, and Ti and show trends between the stability of the <math> Ge 0.5 − x M x Te 0.5</math> systems and the atomic position, composition, and distribution of the metal atoms in the GeTe matrix. Out of all the studied systems, Mo was the only metal to cluster within GeTe. Analysis of the Ge–Te bond lengths and volumes of the <math> Ge 0.5 − x M x Te 0.5</math> supercells shows that increasing the atomic concentration (2.08, 4.17, 6.25 at. %) of the different metals causes varied distortions of the crystal structure of GeTe that are accompanied by significant changes in the projected density of states. Computational predictions concerning metal solubility and the effect of metal incorporation on critical properties of GeTe are compared to experimental results in the literature (Cu, Mn, Mo, and Ti) and to transmission electron microscopy and transport data from newly characterized co-sputtered <math> Ge 0.5 − x Fe x Te 0.5</math> films. The computational predictions of decreasing solubility (Mn <math> ></math> Cu, Fe <math> ></math> Ti, Mo) shows good agreement with experimental observations (Mn, Cu <math> ></math> Fe <math> ></math> Ti, Mo), and <math> Ge 0.5 − x Fe x Te 0.5</math> films exhibited increased crystallization temperatures from pure GeTe.

Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory

The local structural differences in amorphous Ge-Sb-Te alloys

Structural and electronic characteristics of amorphous Ge8Sb2Te11

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Ab initio molecular dynamics and materials design for embedded phase-change memory

Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Origin of Short- and Medium-Range Order in Supercooled Liquid Ge3Sb2Te6 Using Ab Initio Molecular Dynamics Simulations.

Explosive Crystallization Characteristic of Ge–Cu–Te Thin Films for Phase-Change Memory

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Materials For Phase-Change Memory With Elevated Temperature Stability

First-principles study and experimental characterization of metal incorporation in germanium telluride

Medium-range structural order in amorphous Ge2Sb2Te5 phase change material

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

Understanding CrGeTe3: an Abnormal Phase Change Material with Inverse Resistance and Density Contrast

Direct observation of structural transitions in the phase change material Ge2Sb2Te5