Abstract:Surface acoustic wave (SAW) devices based on multi-layer structures have been widely used in filters and sensors. The electromechanical coupling factor (K-2), which reflects energy-conversion efficiency, directly determines the bandwidth of the filter and the sensitivity of sensor. In this work, a new configuration of dual-mode (quasi-Rayleigh and quasi-Sezawa) SAW devices on a ZnO/SiC layered structure exhibiting significantly enhanced K-2 was studied using the finite element method (FEM), which features in the partial etching of the piezoelectric film between the adjacent interdigitated electrodes (IDTs). The influences of piezoelectric film thickness, etching ratio, top electrodes, bottom electrodes, and the metallization ratio on the K-2 were systematically investigated. The optimum K-2 for the quasi-Rayleigh mode and quasi-Sezawa mode can exceed 12% and 8%, respectively, which increases by nearly 12 times and 2 times that of the conventional ZnO/SiC structure. Such significantly promoted K-2 is of great benefit for better comprehensive performance of SAW devices. More specifically, a quasi-Rayleigh mode with relatively low acoustic velocity (V-p) can be applied into the miniaturization of SAW devices, while a quasi-Sezawa mode exhibiting a V-p value higher than 5000 m/s is suitable for fabricating SAW devices requiring high frequency and large bandwidth. This novel structure has proposed a viable route for fabricating SAW devices with excellent overall performance.

Tetrahedral Amorphous Carbon Films as a Frequency- Increased Interlayer of a Film-Shaped SAW Device

Tetrahedral amorphous carbon films as a frequency-increasing interlayer of surface acoustic wave devices with a ZnO/Si configuration

Single-Crystalline LiTaO 3 Film-Based High-Frequency Surface Acoustic Wave Resonators and Electronics Applications

Pulsed-laser deposition of piezoelectric-coefficient modulated multilayered films ZnO/Al2O3 on silicon and their enhanced acoustic resonance

Strongly Adhering and Thick Highly Tetrahedral Amorphous Carbon (ta–c) Thin Films Via Surface Modification by Implantation

Design Study on SAW Devices Based on ZnO/Si Structure

ZnO film for application in surface acoustic wave device

Crystalline Structure Effect on the Performance of Flexible ZnO/polyimide Surface Acoustic Wave Devices

High-frequency V-doped ZnO/SiC Surface Acoustic Wave Devices with Enhanced Electromechanical Coupling Coefficient

Enhanced Coupling Coefficient in Dual-Mode ZnO/SiC Surface Acoustic Wave Devices with Partially Etched Piezoelectric Layer

Influence of Ion Energy and Substrate Temperature on the Optical and Electronic Properties of Tetrahedral Amorphous Carbon (Ta-C) Films

Heterogeneous integration of lithium tantalate thin film on quartz for high performance surface acoustic wave resonator

Zno Films For Surface Acoustic Wave Microfluidic Devices

Theoretical Investigation of Acoustic Wave Devices Based on Different Piezoelectric Films Deposited on Silicon Carbide

Theoretical and Experimental Study of High-Electromechanical-Coupling Surface Acoustic Wave Resonators Based on A-Plane (1120)al0.56sc0.44n Films

Synthesis of Surface Acoustic Wave Filter with Al/ZnO Thin Film Deposited on Silicon Wafer

ZnO Film Thickness Effect on Surface Acoustic Wave Modes and Acoustic Streaming

Amorphous TeO2/36°Y-X LiTaO3 Substrates for SAW Application

High-Frequency Surface Acoustic Wave Devices Based on ZnO/SiC Layered Structure

Structure and Tribological Properties of Ultra-Thin Tetrahedral Amorphous Carbon (ta-C) Films

Deposition of High-Quality Zinc Oxide Thin Films on Diamond Substrates for High-Frequency Surface Acoustic Wave Filter Applications