Abstract:The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied using a combination of density functional theory (DFT) and angle‐resolved photoemission spectroscopy (ARPES). Large‐scale first principles simulations are enabled by using DFT calculations with a machine‐learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, a “bulk unfolding” scheme is implemented by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, a good agreement is found between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states, which may be detected by ARPES with low photon energies. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. The combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, for example, topological qubits utilizing the Majorana zero modes. InAs and InSb nanowires interfaced with superconductors are regarded as the leading materials platform for the potential realization of qubits based on Majorana zero modes. The electronic structure of InAs and InSb surfaces is investigated using first‐principles simulations based on density functional theory and angle resolved photoemission spectroscopy experiments. The effects of surface reconstructions and oxidation are elucidated.

THE ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS ATOMIC AND ELECTRONIC STRUCTURE OF IDEAL AND RECONSTRUCTED a-Sn (100) SURFACES

Atomic and electronic structure of ideal and reconstructed $α$-Sn (111) surface

Reconstruction, rumpling, and Dirac states at the (001) surface of a topological crystalline insulator Pb1-xSnxSe

First-principles study of the topological surface states of -Sn(111)

Structure and Electronic Properties of the (3×3)R30∘snau2

Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy

Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator

Structural Stability And Topological Surface States Of The Snte (111) Surface

SURFACE RECONSTRUCTION OF GaSb(lOO)

In Situ Resolving the Atomic Reconstruction of SnO 2 (110) Surface

Structural and Electronic Properties of Ge-Si, Sn-Si, and Pb-Si Dimers on Si(001) from Density-Functional Calculations

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(23×23)R…

Electronic structure of Au-Sn compounds grown on Au(111)

In Situ Resolving the Atomic Reconstruction of SnO2 (110) Surface

Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

A POSSIBLE SURFACE ATOMIC STRUCTURE MODEL OF InP (100) (4×2) RECONSTRUCTION

Epitaxial Growth and Quantum Well States Study of Sn Thin Films on Sn Induced Si(111)-(2 Root 3x2 Root 3) R30 Degrees Surface

Atomic Structure and Properties of SnO2 (100) and (101) Surfaces and (301) Steps in the (100) Surface

$\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and electronic structure of BaSnO$_3$ film

Alkali-metal induced electronic structure evolution in Sn4Sb3 studied by angle-resolved photoemission spectroscopy

Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle‐Resolved Photoemission Spectroscopy