The Effect of Pressure and Band Gap Theoretical Study in N-doped TiO 2 Nanoparticles

Xin Wang,Hongkun Zhang,Tao Jiang,Yanan Li,Liangsheng Qiang
2015-01-01
Abstract:As part of our efforts to find a way to control the concentration of N-doped TiO2, TiNxOy powers are prepared by a device of our own design. Nanomaterials are generated using N-doped TiO2 material with their concentrations by adjusting the amount of NH3 under middle pressure. N-doped TiO2 particles are characterized under the reaction conditions at different middle pressure. Experimental results indicate that the band gap of semiconductor has been narrowed by increasing of the concentration of N-doped TiO2. It can therefore be concluded that the synthesis route we found through this study is an effective way to adjust the relationships between the concentration and the band gap of the N-doped TiO2 nanomaterials.
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