Abstract:We present first-principles total-energy electronic-structure calculations that provide the microscopic mechanism of Ag atom diffusion between the half unit cells (HUCs) on the Si(111)-(7×7) surface with and without the tip of the atomic force microscope (AFM). We find that, without the presence of the AFM tip, there are three pathways of inter-HUC diffusion. The pathway, in which the diffusing atom passes over the nanohole of the surface, has the lowest energy barrier. The diffusion along this pathway between the two HUCs is almost symmetric with the energy barrier of about 0.8 eV in both directions. In the other two pathways, the adatom diffuses along the edge of the nanohole. The diffusion along these two pathways have an energy barrier of about 1 eV. With the presence of the tip, we find that the reaction pathways are essentially the same, but the diffusion along the edge of the nanohole has a lower energy barrier than the diffusion over the nanohole. Thus the diffusion channel is changed by the presence of the tip. In the diffusion along the edge of the nanohole, the energy barrier in one direction is substantially reduced to be 0.2–0.4 eV by the tip, while that of the diffusion in the reverse direction remains larger than 1 eV. The Si tip reduces the energy barrier more than the Pt tip due to the flexibility of the tip apex structure. In addition to the reduction of the barrier, the tip traps the diffusing adatom preventing diffusion in the reverse direction. Also we find that the shape of the tip apex structure is important for the adatom's trapping ability. The bond formation between the AFM tip atom and the surface adatom is essential for atom manipulation using the AFM tip. Our results show that atom manipulation is possible with both the metallic and semiconducting AFM tips.

Absence of Nonlocal Manipulation of Oxygen Atoms Inserted below the Si(111)-7×7 Surface.

Combining Scanning Tunneling Microscope (STM) Imaging and Local Manipulation to Probe the High Dose Oxidation Structure of the Si(111)-7×7 Surface

Non-local Atomic Manipulation on Semiconductor Surfaces in the STM: the Case of Chlorobenzene on Si(111)-7×7.

Nonlocal Desorption of Chlorobenzene Molecules from the Si(111)-(7×7) Surface by Charge Injection from the Tip of a Scanning Tunneling Microscope: Remote Control of Atomic Manipulation.

Theory of single atom manipulation with a scanning probe tip: Force signatures, constant-height, and constant-force scans

Oxygen-Induced Migration of Ag Nano-Clusters on Si(111)-7 X 7 Surface

Oxygen Adsorption on Ag∕Si(111)-7×7 Surfaces

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Initiating and Imaging the Coherent Surface Dynamics of Charge Carriers in Real Space

ROLES OF STM TIP AND EXTERNAL ELECTRIC FIELD IN THE SINGLE ATOM MANIPULATION ON Si(111) 7×7 SURFACE

A Density-Functional Theory Study on the Chemisorption and Stm Images of Ag(100)/O Surface

Atomic force microscope manipulation of Ag atom on the Si(111) surface

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Manipulation of Polyatomic Molecules with the Scanning Tunnelling Microscope at Room Temperature: Chlorobenzene Adsorption and Desorption from Si(111)-(7 × 7)

Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity

Quantum Chemical Approach to Atomic Manipulation of Chlorobenzene on the Si(111)-7×7 Surface: Resonance Localization, Vibrational Activation, and Surface Dynamics

Vertical and lateral manipulation of single Cs atoms on the semiconductor InAs(111)A

Precursor Mechanism for Interaction of Bulk Interstitial Atoms with Si(100)

Sub-surface Oxygen and Surface Oxide Formation at Ag(111): A Density-functional Theory Investigation

Nonlocal STM Manipulation of Chlorobenzene on Si(111)-7 × 7: Potentials, Kinetics, and First-Principles Molecular Dynamics Calculations for Open Systems

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface