Abstract:The thermionic emission mechanism is usually employed to model the charge packet, which is not affected by the potential barrier; however, the electric fields induced by the charge itself are not included in the previous work. We introduce a proposed physical-based model to characterize the whole charge behavior characteristics of the pinned photodiode (PPD) when employing the thermal diffusion, self-induced drifting, and thermionic emission mechanisms together. In addition, the dynamic PPD parameters such as PPD capacitance (CPPD), PPD potential (V-PPD), and charge transfer potential barrier (V-B) are included to characterize the integration and transfer process together based on iterative methods. The model is verified with technology computer-aided design (TCAD) simulations, and the test devices were fabricated in a 0.11-mu m CMOS image sensor (CIS) process. The proposed analytical behavior model presents a great convenience for circuit-level simulation of the PPD-based pixels.

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Pulse Mode Characterization of High-Power Modified Uni-Traveling Carrier Photodiodes

Monolithically Integrated Linear-Cascade Modified Uni-traveling-carrier Photodiodes

High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

Two-Tone Characterization of High-Power Modified Uni-Traveling Carrier Photodiode

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Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Research of Balanced Detection Techniques for High Speed Weak Optical Signal

Analytical Modeling of Charge Behavior in Pinned Photodiode for CMOS Image Sensors