Monolithic Integrated Balanced Photodiodes with Improved Electrical Isolation

Yaru Han,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Yi Luo

2019-01-01

Abstract:Electrical isolation problem in monolithic integrated balanced photodiodes is investigated. Dry-etching induced damage caused an excess shunt leakage current of 2.5 mA, which has been suppressed by a combined dry and wet etching process.

What problem does this paper attempt to address?

High-Power Flip-Chip Monolithically integrated Light-Emitting diodes: Based on Self-Isolation Technology

LinFeng Wu,WenTing Tang,BaoJin Chen,JiaXin Pang,Xiu Zhang,ShuQi Li,BaoXing Wang,HanXiang Yi,YuZhu Li,FangZhou Zhang,HaoQiang Liu,Yong Cai

DOI: https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308848

2020-01-01

Abstract:In this paper, we proposed an innovation flip-chip bonding approach for high-power flip-chip monolithically integrated LEDS(MI-LED), termed as "self-isolation technology". This technology improves the heat dissipation ability of the device, ensure the conductivity of the chip and effectively reduces the alignment accuracy of the flip-chip bonding requirement.
Monolithically Integrated Linear-Cascade Modified Uni-traveling-carrier Photodiodes

Enfei Chao,Bing Xiong,Yaru Han,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/acpc.2020.t4g.5

2020-01-01

Abstract:Linear-cascade modified uni-traveling-carrier photodiodes are monolithically integrated and exhibit a bandwidth improvement from 32 GHz to 54 GHz, which has been verified to result from the reduction of device capacitance due to the series structure. © 2020 The Author(s)
Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO 2 /TiAu/SiO 2 structure

YiMing Bai,Jun Wang,Yu Wang,Han Zhang,NuoFu Chen,JianXi Yao,TianMao Huang,YanShuo Wang,XingWang Zhang,JinLiang Wu

DOI: https://doi.org/10.1007/s11431-010-4190-2

2011-01-01

Science China Technological Sciences

Abstract:A novel interconnected structure consisting of a conventional polyimide layer (PM) and an additional SiO 2 /TiAu/SiO 2 sandwich multilayer has been firstly proposed for improving the performance of GaAs micro-solar cell array. The specific experimental investigations on the array with 108 unit cells have demonstrated that the novel structure of PM/SiO 2 /TiAu/SiO 2 can effectively enhance the open-circuit voltage from 75 to 84 V and the fill factor from 35% to 57%. The performance improvement of our devices can be attributed to two aspects. Firstly, the TiAu shielding film can prevent the incident light from penetrating into the GaAs substrate so as to induce the serious substrate leakage current. Secondly, the compact texture of SiO 2 in the novel structure can reduce the perimere recombination due to the crackle or shrinkage of PM. It is indicated that the novel structure can distinctly reduce the leakage current and improve output characteristic of micro-solar cells.
Mixed-dimensional WS 2 /wse 2 /si Unipolar Barrier Heterostructure for High-Performance Photodetection

Zihao Huang,Mengmeng Yang,Zhicong Qiu,Zhongtong Luo,Yu Chen,Chun Du,Jiandong Yao,Huafeng Dong,Zhaoqiang Zheng,Jingbo Li

DOI: https://doi.org/10.1007/s40843-022-2393-4

2023-01-01

Abstract:The use of unipolar barrier structures that can selectively block dark current but allow photocurrent to flow unimpededly has emerged as an effective strategy for constructing high-performance photodetectors. In particular, two-dimensional (2D) materials with tunable band structures and self-passivated surfaces not only satisfy band-matching requirements but also avoid interface defects and lattice mismatches, which are attractive for designing unipolar barriers. Here, we demonstrate a mixed-dimensional WS 2 /WSe 2 /p-Si unipolar barrier photodetector, in which 2D WS 2 acts as the photon absorber, atomically thin WSe 2 as the unipolar barrier, and 3D p-Si as the photogenerated carrier collector. The intercalated WSe 2 not only mitigates detrimental substrate effects but also forms a high-conduction band barrier to filter out several dark current components with the photocurrent flowing unimpededly. Driven by tunneling and carrier multiplication effects, the WS 2 /WSe 2 /p-Si device exhibits a high light on/off ratio above 10 5 , a high detectivity of 2.39 × 10 12 Jones, and a fast rise/decay time of 8.47/7.98 ms. These figures of merit are significantly improved over the conventional WS 2 /p-Si device, opening up an effective scheme for designing high-performance optoelectronic devices.
Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor

Yuanzhe Li,Guowei Chen,Shenghe Zhao,Chuan Liu,Ni Zhao

DOI: https://doi.org/10.1126/sciadv.abq0187

2022-09-23

Abstract:The gain-bandwidth trade-off limits the development of high-performance photodetectors; i.e., the mutual restraint between the response speed and gain has intrinsically limited performance optimization of photomultiplication phototransistors and photodiodes. Here, we show that a monolithically integrated photovoltaic transistor can solve this dilemma. In this structure, the photovoltage generated by the superimposed perovskite solar cell, acting as a float gate, is amplified by the underlying metal oxide field-effect transistor. By eliminating deep-trap defects through processing optimization, we achieved devices with a maximum responsivity close to 6 × 104 A/W, a specific detectivity (D*) of 1.06 × 1013 Jones, and an f3dB of 1.2 MHz at a low driving voltage of 3 V. As a result, a record gain-bandwidth product is achieved. The device further exhibits the advantage in photoplethysmography detection with weak illuminations, where our device accurately detects the detailed features that are out of the capability of conventional photodetectors.
Monolithic Integration of Deep Ultraviolet LED with a Multiplicative Photoelectric Converter

Shuai Wang,Hanling Long,Yi Zhang,Qian Chen,Jiangnan Dai,Shuang Zhang,Jingwen Chen,Renli Liang,Linlin Xu,Feng Wu,Zi-Hui Zhang,Haiding Sun,Changqing Chen,Yihua Gao

DOI: https://doi.org/10.1016/j.nanoen.2019.104181

IF: 17.6

2019-01-01

Nano Energy

Abstract:Vertically monolithic integration of multiple devices on a single chip has emerged as a promising approach to overcome the fundamental limits of material and physical properties, providing unique opportunities to harness their complementary physics through integrated solutions to significantly enhance device performance. Herein, we demonstrate a deep ultraviolet light emitting diode (DUV LED) integrated with a multiplicative photoelectric converter (MPC) that is composed of p-GaN/intrinsic GaN/n-GaN (p-i-n GaN) structure to induce the electric-optic conversion, thus considerably improve the hole injection efficiency. This p-i-n GaN structure acts as hole-multiplier via firstly DUV light absorption and then electron-hole pair generation. The newly generated electron-hole pairs are firstly separated by the electric field in the p-i-n GaN structure so that multiple holes are driven into multiple quantum wells (MQWs), and finally contribute to the radiative recombination, thus achieving a high wall plug efficiency (WPE) of 21.6%, which exhibits a 60-fold WPE enhancement compared to the conventional DUV LEDs. The monolithic integration strategy demonstrated here sheds light on developing highly efficient light emitters.
High Sensitivity Si-based Photodetection with Nanoscale Protective Layer Based on Interface States.

Anhua Dong,Zhenghan Pei,Junjie Yuan,Shengtao Qian,Junzhe Tao,Hui Wang

DOI: https://doi.org/10.1088/1361-6528/ab2a88

IF: 3.5

2019-01-01

Nanotechnology

Abstract:A large lateral photovoltaic effect has been observed at the interface of SiO2/p-Si/SiO2 structure. Different from the traditional Schottky junction or PN junction device, this photovoltage is mainly dominated by the interface states existing at SiO2/p-Si interface, where the covered nanoscale SiO2 layer brings this device a stable and high photoelectric performance. These interface states can be explained as built-in field caused by the band bending at interface, which regulates the generation and diffusion of photo induced carriers. In this study, we discuss clearly the factors that impact greatly on the photovoltage output and sensitivity, including the oxide thickness, resistivity and tunneling effect. We believe this simple but efficient device will be beneficial for the exploring in photoelectric detection.
High Fill-Factor 4H-Sic Avalanche Photodiodes with Partial Trench Isolation

Lianghui Li,Dong Zhou,Fei Liu,Hai Lu,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/lpt.2016.2602320

IF: 2.6

2016-01-01

IEEE Photonics Technology Letters

Abstract:In this letter, a beveled mesa 4H-SiC ultraviolet (UV) avalanche photodiode (APD) with partial trench isolation is reported. By adopting this partial trench isolation structure, when device diameter of the APD is 150 mu m, its fill factor can increase from 33.9% to 63.5% compared with the traditional full trench isolation structure. The photocurrent of the APD shows corresponding improvement when illuminated with the same UV light source. Through current-voltage, spectral response, and single photon detection characterizations, it is proved that the performance of the partial trench isolation APD does not degrade compared with the traditional full trench isolation structure. The APD fabricated in this letter with partial trench isolation shows a unity-gain peak quantum efficiency of 66.4% at 270 nm and a single photon detection efficiency of 9.5% at 280 nm when the dark count rate is fixed at 1 Hz/mu m(2).
Measured Effectiveness of Deep N-well Substrate Isolation in a 65nm Pixel Readout Chip Prototype

Peilian Liu,Maurice Garcia-Sciveres,Timon Heim,Amanda Krieger,Dario Gnani

DOI: https://doi.org/10.1016/j.nima.2020.163842

2020-03-15

Abstract:The same charge sensitive preamplifier and discriminator circuit with different isolation strategies has been tested to compare the isolation of both analog and digital circuits from the substrate of a 65nm bulk CMOS process to the isolation of only digital circuits, tying analog ground locally to the substrate. This study will show that the circuit with analog on the substrate and digital in deep N-well has better noise isolation between analog and digital.

Instrumentation and Detectors,High Energy Physics - Experiment
Balancing the Photo‐Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual‐Polarity Photodetection

Shi Fang,Danhao Wang,Yang Kang,Xin Liu,Yuanmin Luo,Kun Liang,Liuan Li,Huabin Yu,Haochen Zhang,Muhammad Hunain Memon,Boyang Liu,Zhenghui Liu,Haiding Sun

DOI: https://doi.org/10.1002/adfm.202202524

IF: 19

2022-04-13

Advanced Functional Materials

Abstract:A photoelectrochemical‐type photosensor using monocrystalline p‐GaN nanowires on the Si platform is built with two primary interfaces, at which the charge separation and transport determine the photoresponses. With rational Platinum decoration, the balance of the charge carriers is tuned, making the device exhibit either positive or negative photocurrent upon different light illumination.The carrier transport dynamics at the surface/interface of semiconductors determine the electronic and optical properties of devices. Thus, precise control of their dynamic processes while understanding the nature of these characteristics is crucial for modulating device functionalities. Here, a photoelectrochemical‐type photosensor is built using monocrystalline p‐GaN nanowires on the Si platform, which unambiguously exhibits either positive or negative photocurrent upon different light illumination. Such dual‐polarity photocurrents are attributed to photogenerated‐carrier‐transport competition at two interfaces: the GaN/electrolyte and GaN/Si interface. Particularly, a rational Pt decoration successfully accelerates the carrier migration at the GaN/electrolyte interface that breaks the original balance of carrier transport. This mechanism is further elaborated by Kelvin‐probe‐force‐microscopy characterization, which intuitively reveals the impact of Pt decoration on modulating nanowires' surface band bending and the consequent carrier dynamics at the interfaces. These insights into the control of carrier dynamics shed light on achieving multi‐functional PEC devices built upon simple semiconductor architectures.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

Tiancai Wang,Hongling Peng,Peng Cao,Qiandong Zhuang,Jie Deng,Jian Chen,Wanhua Zheng

DOI: https://doi.org/10.3390/s24020640

IF: 3.9

2024-01-20

Sensors

Abstract:Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fabrication cycle time and fabrication cost. In this work, we proposed an improved fabrication process for ultra-deep mesa-structured silicon APDs for photodetection in the visible and near-infrared wavelengths with improved performance and reduced costs. The improved process reduced the complexity through significantly reduced photolithography steps, e.g., half of the steps of the existing process. Additionally, single ion implantation was performed under low energy (lower than 30 keV) to further reduce the fabrication costs. Based on the improved ultra-concise process, a deep-mesa silicon APD with a 140 V breakdown voltage was obtained. The device exhibited a low capacitance of 500 fF, the measured rise time was 2.7 ns, and the reverse bias voltage was 55 V. Moreover, a high responsivity of 103 A/W@870 nm at 120 V was achieved, as well as a low dark current of 1 nA at punch-through voltage and a maximum gain exceeding 1000.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Monolithic On-chip Magneto-optical Isolator with 3 Db Insertion Loss and 40 Db Isolation Ratio

Qingyang Du,Chuangtang Wang,Yifei Zhang,Yan Zhang,Takian Fakhrul,Wei Zhang,Claudia Goncalves,Cesar Blanco,Kathleen Richardson,Longjiang Deng,Caroline A. Ross,Lei Bi,Juejun Hu

DOI: https://doi.org/10.1021/acsphotonics.8b01257

IF: 7

2018-01-01

ACS Photonics

Abstract:On-chip optical isolators constitute an essential building block for photonic integrated circuits (PICs). Here, we experimentally demonstrated a magneto-optical isolator monolithically integrated on silicon featuring 3 dB insertion loss and 40 dB isolation ratio, both of which represent significant improvements over state-of-the-art. The isolator is also fully passive and operates under a simple unidirectional magnetization scheme. Such superior performance is enabled through a three-way combination of a strip-loaded waveguide design, a compositionally optimized chalcogenide glass as the light guiding medium, and low-loss taper structures created via gray-scale lithographic processing. The device represents an important step toward a practical solution for on-chip isolation in PICs.
Study on Low Power Back-Side Deep Trench Isolation Etching on Stack-BSI CMOS Image Sensor

Zhuo Yin,Jianjun Li,Xinruo Su,Dejing Ma,Hanming Wu,Xing Zhang

DOI: https://doi.org/10.1109/cstic52283.2021.9461581

2021-01-01

Abstract:The leakage of pixel is a significant index to characterize quality of CMOS image sensor (CIS), which is classified into white pixel (WP) and dark current (DC) in the yield test. It is widely observed by researches that WP and DC are induced by metal contamination or plasma damage. And many solutions are attempted in order to reduce WP and DC. One of a popular method is, for the back-side illuminated (BSI) product, deep trench isolation (DTI) with high-K film by holes accumulation layer formation. However, this passivation film could not be strong enough for pixel protection if the deep trench etching is produced by high power process or unreasonable integration. So deep study is excused by this paper on both lower down the plasma damage and remove plasma damaged region. And the benefit result of experiment is shown finally.
Te x Se 1- x Shortwave Infrared Photodiode Arrays with Monolithic Integration

Meng Peng,Yuming He,Yuxuan Hu,Zunyu Liu,Xinyi Chen,Zhiqiang Liu,Junrui Yang,Maohua Chen,Weijie Liu,Feng Wu,Luying Li,Jiangnan Dai,Changqing Chen,Jungang He,Long Hu,Chao Chen,Jiang Tang

DOI: https://doi.org/10.1021/acs.nanolett.4c03728

IF: 10.8

2024-09-27

Nano Letters

Abstract:Te(x)Se(1-x) shortwave infrared (SWIR) photodetectors show promise for monolithic integration with readout integrated circuits (ROIC), making it a potential alternative to conventional expensive SWIR photodetectors. However, challenges such as a high dark current density and insufficient detection performance hinder their application in large-scale monolithic integration. Herein, we develop a ZnO/Te(x)Se(1-x) heterojunction photodiode and synergistically address the interfacial elemental...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Suppressed Trap Density Leads to Versatile P‐i‐n Heterojunction Photodiode with Enhanced Photovoltaic/Photodetection Dual‐Function

Yi Wei,Zining Li,Jiajing Feng,Yu Chen,Jianqi Zhang,Yawen Li,Wei Jiang,Tianrui Zhai,Yuze Lin,Zhixiang Wei,Zhaohui Wang,Ningning Liang

DOI: https://doi.org/10.1002/adom.202202606

IF: 9

2023-01-01

Advanced Optical Materials

Abstract:Multifunctional integration of optoelectronic devices within a single photodiode is in high demand for next-generation on-chip multifunctional integration and Internet of Things applications. Owing to the rapidity of nucleation-crystallization that is associated with the solution method, large trap state densities (N-t), and consequently, severe dark current densities, as well as recombination losses are generally induced, which are detrimental to the detectivity (D*) of organic photodetectors (OPDs) and to the open-circuit voltage (V-OC) of organic photovoltaics (OPVs). Herein, a versatile p-i-n heterojunction organic photodiode with optimized vertical phase distribution and rational solid-state packing is fabricated via a layer-by-layer (LBL) deposition procedure entailing the introduction of a rylene-fullerene hybrid as a morphological modulator. This precisely controlled photodiode displayed suppressed N-t (2.5 x 10(16) cm(-3)), low-lying Urbach energy E-u (23.2 meV), as well as synergistically reduced series resistance, dark current, and sub-bandgap radiative/non-radiative recombination losses. Consequently, this ternary-pseudo-bilayer-type photodiode exhibits excellent dual-function performance with an outstanding D* of 9.48 x 10(11) Jones in self-powered OPD mode and a surprisingly suppressed energy loss of 0.538 eV in OPV mode. This study provides important insights into the mechanism and effects of trap density and energy disorder suppression in solution-processed multifunctional integrated photoelectric conversion diodes.
Enhanced Performance of Perovskite Single-Crystal Photodiodes by Epitaxial Hole Blocking Layer

Yuzhu Pan,Xin Wang,Yubing Xu,Yuwei Li,Elias Emeka Elemike,Ahmed Shuja,Qing Li,Xiaobing Zhang,Jing Chen,Zhiwei Zhao,Wei Lei

DOI: https://doi.org/10.3389/fchem.2020.00791

IF: 5.5

2020-09-10

Frontiers in Chemistry

Abstract:Introducing hole/electron transporting and blocking layers is considered to enhance the performance of electronic devices based on organic–inorganic hybrid halide perovskite single crystals (PSCs). In many photodiodes, the hole/electron transporting or blocking materials are spin-coated or thermal-evaporated on PSC to fabricate heterojunctions. However, the heterojunction interfaces due to lattice mismatch between hole/electron, transporting or blocking materials and perovskites easily form traps and cracks, which cause noise and leakage current. Besides, these low-mobility transporting layers increase the difficulty of transporting carriers generated by photons to the electrode; hence, they also increase the response time for photo detection. In the present study, MAPbCl3-MAPbBr2.5Cl0.5 heterojunction interfaces were realized by liquid-phase epitaxy, in which MAPbBr2.5Cl0.5 PSC acts as an active layer and MAPbCl3 PSC acts as a hole blocking layer (HBL). Our PIN photodiodes with epitaxial MAPbCl3 PSC as HBL show better performance in dark current, light responsivity, stability, and response time than the photodiodes with spin-coated organic PCBM as HBL. These results suggest that the heterojunction interface formed between two bulk PSCs with different halide compositions by epitaxy growth is very useful for effectively blocking the injected charges under high external electric field, which could improve the collection of photo-generated carriers and hereby enhance the detection performance of the photodiode. Furthermore, the PIN photodiodes made of PSC with epitaxial HBL show the sensitivities of 7.08 mC Gyair−1 cm−2, 4.04 mC Gyair−1 cm−2, and 2.38 mC Gyair−1 cm−2 for 40-keV, 60-keV, and 80-keV X-ray, respectively.

chemistry, multidisciplinary
Energy-Band Engineering By Remote Doping of Self-Assembled Monolayers Leads to High-Performance Igzo/P-Si Heterostructure Photodetectors

Gunhoo Woo,Dong Hyun Lee,Hocheon Yoo,Taesung Kim

DOI: https://doi.org/10.1149/ma2023-02341668mtgabs

2023-12-22

ECS Meeting Abstracts

Abstract:Advancements in emerging technologies, such as autonomous driving, artificial intelligence, medical imaging, and augmented reality, have increased the demand for high-resolution image sensors to transmit further accurate color information. To meet the performance requirements of these applications, several research have been accelerating towards the utilization of emerging low-dimensional semiconductor materials, such as metal oxides, transition metal dichalcogenides, perovskites, and other organic materials. Among them, metal oxide semiconductors (MOSs) are potential candidates for developing high-performance photodetectors. It can be synthesized over large areas using a simple/low-temperature process and are compatible with conventional fabrication equipment. However, MOS-based photodetectors still have several limitations, 1) the presence of charge traps and operational instability on the oxide surface, which degrade photodetection performance, and 2) the absence of an appropriate doping technique for MOS has blocked to improve photodetection performance via materials characteristic modification method. In this study, we present a strategy to overcome these limitations and significantly enhance the performance of IGZO, which is representative of oxide semiconductor thin film, based photodetector with high operation stability and sustainability under ambient atmospheres. We utilized energy-band engineering through an octadecylphosphonic acid (ODPA) self-assembled-monolayer (SAM)-based doping treatment to enhance the photoelectric characteristics of IGZO/ p -Si hetero-interfaced devices (ISH). The ODPA consists of a head group of the hydroxyl group, which forms the self-assembled covalent bond formation of R–P–O–substrate. Combining the ODPA SAM with the oxide surface of IGZO provided carrier concentration control based on their a dipole effect, and remain the performance and functionality through the surface encapsulation. As a result, under a light-emitting diode (LED) wavelength with an intensity of 3.9 mW, the proposed device exhibited remarkable photo-switching current ratio of 4.33 × 10 3 A/A and negative differential resistance (NDR) phenomenon. Espacially, the dark current of the ODPA treated ISH is decreased about 10 times lower than as-fabricated ISH, which shows the possibility of signal noise minimization. These performance improvement is expected to be derived from band properties modulation through IGZO layer annealing and ODPA doping. To clarify the doping effect of each treatment, we characterized the ODPA self-assembled monolayer using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM) to provide comprehensive analysis of the heterointerface effects. We also characterized the electrical properties of IGZO thin-film transistors (TFTs) based on variations of the annealing temperature to clarify the ODPA doping effect. We evaluated 156 ODPA-treated IGZO/ p -Si heterostructure photodetectors, which were scaled for fabrication on a 4 inch wafer. The devices exhibited a 100% yield, and uniform current behavior in the dark state (0.20 ± 0.06 nA) and light state (0.87 ± 0.15 μA), owing to an evenly deposited IGZO layer and a simple-to-treat ODPA doping scheme. Furthermore, consecutive sweeps of 20,000 cycles verified excellent cycle-to-cycle endurance, resulting in highly robust photoelectric behaviors without operational failure. Additionally, the performance of the ODPA-treated, IGZO/ p -Si heterostructure photodetector remained unchanged for 237 days without degradation under atmospheric exposure (relative humidity (RH) = 37–53 % and 20.6–23.1 °C). Acknowledgements This research was supported by funding supports from the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2020R1A2C1101647) and Korea government (MEST) (NRF-2017R1A2B3011222). Figure 1
Silicon-Compatible Photodetectors: Trends to Monolithically Integrate Photosensors with Chip Technology

Wei Yang,Jiaxin Chen,Yong Zhang,Yujia Zhang,Jr-Hau He,Xiaosheng Fang

DOI: https://doi.org/10.1002/adfm.201808182

IF: 19

2019-01-01

Advanced Functional Materials

Abstract:Encouraged by the increasing requirements of intelligent equipment, silicon integrated circuit-compatible photodetectors that support single-chip photonic-electronic systems have gained considerable progresses. Advanced materials have resulted in enhanced device performance based on traditional photovoltaic effect and photoconductive effect, and novel device designs have catalyzed new working mechanisms combing rapid photoresponse and high responsivity gain. Surprising applications are developed using monolithic photonic-electronic platforms, and the developing integration strategies keep pace with the developing complementary metal-oxide-semiconductor techniques as well as nonsilicon substrates. Here, the recent developments in silicon-compatible photodetectors, both in device advances and their integration routes, are reviewed. Meanwhile, the progresses, challenges, and possible future directions in this field are discussed and concluded.
Investigation of CMOS Image Sensor Dark Current Reduction by Optimizing Interface Defect

Wuzhi Zhan,Zhengying Wei,Yansheng Wang,Wei Zhou,Chang Sun,Jun Qian,Yuhang Zhao

DOI: https://doi.org/10.1109/cstic.2017.7919742

2017-01-01

Abstract:Dark current (DC) was one of the most critical parameters of CMOS image sensors (CIS), and interface defects during semiconductor fabrication process dominate the DC performance. The research investigated Tx Negative-Bias / P-Well and P+ IMP in this paper, and achieved extreme low DC at high temperature of 60 °C. Firstly, Tx negative bias was used to restrict the Poly/Gate OX/Si substrate interface defects. The DC reduced 83.9% while −0.7 V Negative-Bias implemented on Tx. Secondly, P-Well IMP conditions were studied for reducing the Interface defects of shallow trench isolation (STI). The DC could decrease 39.8 mV/s by increasing Boron dosage of P-Well. Thirdly, photodiode surface IMP (P+) was researched. The suppression of DC induced by PD surface interface defects would decrease 20 mV/s with experimental condition.
Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

Yaofeng Yi,Toshimasa Umezawa,Kouichi Akahane,Tetsuya Kawanishi

DOI: https://doi.org/10.1109/access.2024.3391336

IF: 3.9

2024-04-27

IEEE Access

Abstract:We reported a thermal investigation on a photodetector (PD) with a sandwiched structure comprising p-type, intrinsic, and n-type (PIN-PD) layers based on Williams' thermal model. Simulations and measurements of the photocurrent in the linear region, 3-dB bandwidth and thermal analyses were conducted. We found a good agreement between the measured photocurrent and simulations. The measured linear photocurrent of PIN-PD with substrate and absorber was 28 mA at -2 V, which was related to the expected RF output power of +13 dBm at 50 GHz. In addition, thermal analyses evaluated the junction temperature corresponding to the specific measured photocurrent, as well as the 431 K for junction breakdown temperature of the fabricated PD samples. This evaluation further predicted that this type of PIN-PD would reach the thermal breakdown point when the photocurrent was 34 mA at -2 V. Furthermore, with the application of AlN flip-chip bonding, the linear and expected maximum photocurrent were improved to 30 mA and 45 mA, respectively. Finally, we predicted the PD temperature and maximum photocurrent of 55 mA using AlN instead of InP as the main substrate.

computer science, information systems,telecommunications,engineering, electrical & electronic

Monolithic Integrated Balanced Photodiodes with Improved Electrical Isolation

High-Power Flip-Chip Monolithically integrated Light-Emitting diodes: Based on Self-Isolation Technology

Monolithically Integrated Linear-Cascade Modified Uni-traveling-carrier Photodiodes

Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO 2 /TiAu/SiO 2 structure

Mixed-dimensional WS 2 /wse 2 /si Unipolar Barrier Heterostructure for High-Performance Photodetection

Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor

Monolithic Integration of Deep Ultraviolet LED with a Multiplicative Photoelectric Converter

High Sensitivity Si-based Photodetection with Nanoscale Protective Layer Based on Interface States.

High Fill-Factor 4H-Sic Avalanche Photodiodes with Partial Trench Isolation

Measured Effectiveness of Deep N-well Substrate Isolation in a 65nm Pixel Readout Chip Prototype

Balancing the Photo‐Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual‐Polarity Photodetection

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

Monolithic On-chip Magneto-optical Isolator with 3 Db Insertion Loss and 40 Db Isolation Ratio

Study on Low Power Back-Side Deep Trench Isolation Etching on Stack-BSI CMOS Image Sensor

Te x Se 1- x Shortwave Infrared Photodiode Arrays with Monolithic Integration

Suppressed Trap Density Leads to Versatile P‐i‐n Heterojunction Photodiode with Enhanced Photovoltaic/Photodetection Dual‐Function

Enhanced Performance of Perovskite Single-Crystal Photodiodes by Epitaxial Hole Blocking Layer

Energy-Band Engineering By Remote Doping of Self-Assembled Monolayers Leads to High-Performance Igzo/P-Si Heterostructure Photodetectors

Silicon-Compatible Photodetectors: Trends to Monolithically Integrate Photosensors with Chip Technology

Investigation of CMOS Image Sensor Dark Current Reduction by Optimizing Interface Defect

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process