Suppressed Trap Density Leads to Versatile P‐i‐n Heterojunction Photodiode with Enhanced Photovoltaic/Photodetection Dual‐Function

Yi Wei,Zining Li,Jiajing Feng,Yu Chen,Jianqi Zhang,Yawen Li,Wei Jiang,Tianrui Zhai,Yuze Lin,Zhixiang Wei,Zhaohui Wang,Ningning Liang
DOI: https://doi.org/10.1002/adom.202202606
IF: 9
2023-01-01
Advanced Optical Materials
Abstract:Multifunctional integration of optoelectronic devices within a single photodiode is in high demand for next-generation on-chip multifunctional integration and Internet of Things applications. Owing to the rapidity of nucleation-crystallization that is associated with the solution method, large trap state densities (N-t), and consequently, severe dark current densities, as well as recombination losses are generally induced, which are detrimental to the detectivity (D*) of organic photodetectors (OPDs) and to the open-circuit voltage (V-OC) of organic photovoltaics (OPVs). Herein, a versatile p-i-n heterojunction organic photodiode with optimized vertical phase distribution and rational solid-state packing is fabricated via a layer-by-layer (LBL) deposition procedure entailing the introduction of a rylene-fullerene hybrid as a morphological modulator. This precisely controlled photodiode displayed suppressed N-t (2.5 x 10(16) cm(-3)), low-lying Urbach energy E-u (23.2 meV), as well as synergistically reduced series resistance, dark current, and sub-bandgap radiative/non-radiative recombination losses. Consequently, this ternary-pseudo-bilayer-type photodiode exhibits excellent dual-function performance with an outstanding D* of 9.48 x 10(11) Jones in self-powered OPD mode and a surprisingly suppressed energy loss of 0.538 eV in OPV mode. This study provides important insights into the mechanism and effects of trap density and energy disorder suppression in solution-processed multifunctional integrated photoelectric conversion diodes.
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