Abstract:Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables to reach atto-Joule range for logic and memory (i.e., 30X lower switching energy than nanoelectronics). In BiFeO3 the coupling between the antiferromagnetic (AFM) and FE orders is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as CoFe or LSMO. While previous work has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field, several puzzling issues remain. Perhaps the most intriguing among them is that the BiFeO3-CoFe bilayer did not demonstrate any electrically controlled directional anisotropy, i.e., an exchange bias, which is a potential mechanism for 180o magnetic reversal and is independent of switching kinetics. However, what is needed/preferred for logic and memory is a magneto-electric mechanism that works analogous to an applied field, i.e a uni-directional anisotropy that is voltage modulated. Here, we present the evidence of electrical control of exchange bias of a laterally scaled spin valve that is exchange-coupled to BiFeO3 at room temperature. We show that the exchange bias in this bilayer is thermally robust, electrically controlled and reversible. We anticipate that magneto-electricity at such scaled dimensions provides a powerful pathway for computing beyond the modern nanoelectronics transistors by enabling a new class of non-volatile, ultra-low energy computing elements.

Ultralow Voltage Manipulation of Ferromagnetism

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Giant Nonvolatile Manipulation of Magnetoresistance in Magnetic Tunnel Junctions by Electric Fields Via Magnetoelectric Coupling

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Voltage Control of Unidirectional Anisotropy in Ferromagnet-Multiferroic System

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Nonvolatile Voltage-Controlled Magnetization Reversal in a Spin-Valve Multiferroic Heterostructure

Field-Free Switching of Perpendicular Magnetization Through Voltage-Gated Spin-Orbit Torque

Magnetization Switching by Magnon-Mediated Spin Torque Through an Antiferromagnetic Insulator.

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Mesoscopic superconducting memory based on bistable magnetic textures

Highly Efficient Nonvolatile Magnetization Switching and Multi‐Level States by Current in Single Van der Waals Topological Ferromagnet Fe 3 GeTe 2

Highly Efficient Nonvolatile Magnetization Switching and Multi-Level States by Current in Single Van der Waals Topological Ferromagnet Fe<sub>3</sub>GeTe<sub>2</sub>

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Design of Single‐Molecule Multiferroics for Efficient Ultrahigh‐Density Nonvolatile Memories

An invisible non-volatile solid-state memory

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

An energy efficient way for quantitative magnetization switching

Electric Field Control of Nonvolatile Two‐state Magnetoelectric Coefficient at Room Temperature in a Hexaferrite

Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2