Electric Field Control of Nonvolatile Two‐state Magnetoelectric Coefficient at Room Temperature in a Hexaferrite

Kun Zhai,Peipei Lu,Yanfen Chang,Anmin Nie,Zhipeng Yu,Young Sun
DOI: https://doi.org/10.1111/jace.17105
IF: 4.186
2020-01-01
Journal of the American Ceramic Society
Abstract:Cross coupling between magnetization and polarization in multiferroic materials provides a new controlling dimension for creating novel electric devices, particularly the electrical writing magnetic reading of low-power consumption nonvolatile random access memory. Despite its importance, rare single-phase materials that exhibit significant magnetoelectric phenomena at room temperature exist. We herein report that a spin-driven multiferroic hexaferrite Ba(1.1)Sr(0.9)Co(2)Fe(11)AlO(22)exhibits a prominent direct and converse magnetoelectric effect at room temperature. The electric field can manipulate magnetization as large as 0.1 mu(B)/f.u. in the range of +/- 1 MV/m without any external magnetic field. Moreover, a feasible nonvolatile memory based on polycrystalline Ba(1.1)Sr(0.9)Co(2)Fe(11)AlO(22)is realized by recording the states of magnetoelectric coefficients, which is promising for further application in magnetoelectric electronics.
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