Abstract:In order to investigate deeply the luminescent mechanism of amorphous oxygenated Silicon nitride(a-SiNx∶O)film,the a-SiNx∶O thin films were prepared by plasma enhanced chemical vapor deposition(PECVD)at room temperature.By adjusting the flow rate ratio(R)of silane(SiH4)to ammonia(NH3),photoluminescence(PL)with peak position tunable in the visible range from 2.06 to 2.79 eV can be realized.In absorption spectra of a-SiNx∶O films,the location of absorption peaks were in good agreement with those of corresponding PL.It suggested that the PL originates from radiative recombination at luminescent defect state.Based on the calculation of the energy distance between optical absorption edge and the position of absorption peak,the location of this luminescent defect state was determined to be about 0.65 eV underneath the absorption edge.From the analysis on bonding concentration in Fourier transform infrared(FTIR)spectra and the deconvolution of Si 2p peak in X-ray photoelectron spectra(XPS),it was found that the enhancement of PL was proportional to the increase of N-Si-O bonding concentration.Both of the PL intensity and N-Si-O bonding concentration reached the maximum when R=1∶4.The experimental results further certified that luminescent defect state in a-SiNx∶O film was closely related to N-Si-O bonding configuration.Finally,an energy band model for photoluminescence of a-SiNx∶O films was constructed.The carriers were pumped to the exited states,and then relaxed to energy levels of defect states,afterwards recombined via transition between defect state levels and valence band maximum to emit photons.In addition,the phenomenon of the redshift of PL peak with the increase of the flow rate ratio R may arise from two possible reasons,i.e.the shifting of energy level at the maximum position of density of defect state caused by the transformation of N-Si-O bonding configuration and upward shift of valence band maximum arising from the reduction of optical band gap.

Investigation on the luminescent stability in amorphous silicon oxynitride systems

Temperature dependent radiative and non-radiative recombination lifetimes of luminescent amorphous silicon oxynitride systems

The Role Of N-Si-O Bonding Configurations In Tunable Photoluminescence Of Oxygenated Amorphous Silicon Nitride Films

Dynamics of High Quantum Efficiency Photoluminescence from N-Si-O Bonding States in Oxygenated Amorphous Silicon Nitride Films

Investigation on luminescent defect state related to N-Si-O bondingin amorphous oxygenated Silicon nitride film

A New Luminescent Defect State in Low Temperature Grown Amorphous SiNxOy Thin Films

Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

The Evolution of Photoluminescence in Oxidized Amorphous Silicon Nitride Films by Rapid Thermal Annealing

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

The Role of N-Si-O Defect States in Optical Gain from an A-Sinxoy/sio2 Waveguide and in Light Emission from an N-a-sinxoy/p-si Heterojunction LED

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Annealing effect on structures and luminescence of amorphous SiN films

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Higher Than 60% Internal Quantum Efficiency Of Photoluminescence From Amorphous Silicon Oxynitride Thin Films At Wavelength Of 470 Nm

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film