III-V Quantum Dot Lasers Monolithically Grown on Silicon.

Huiwen Deng,Keshuang Li,Mingchu Tang,Jiang Wu,Mengya Liao,Ying Lu,Shujie Pan,Siming Chen,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1088/1361-6641/aae6a5

2019-01-01

Abstract:We review the direct growth of III-V quantum dot laser on Si substrates. A low threading dislocation density, on the order of 10(5) cm(-2), for III-V epilayer on Si has been achieved.

What problem does this paper attempt to address?

Tunable Quantum Dot Lasers Grown Directly on Silicon

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Songtao Liu,Chao Xiang,Chen Shang,Jian-Jun He,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1364/optica.6.001394

IF: 10.4

2019-01-01

Optica

Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.
Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review

Rehab Joko Hussin,Ivan B. Karomi

DOI: https://doi.org/10.1007/s12633-024-03098-2

IF: 3.4

2024-07-26

Silicon

Abstract:Enormous advantages can be brought by using silicon as a substrate for III-V photonic integrated circuit quantum dot (QD) lasers, such as a low cost, high bandwidth transmission data, on-chip light sources, etc. However, several difficulties arise when III-V QD lasers are grown directly on Si-substrate, mainly due to high lattice mismatching between the III-V components and the silicon wafer. In fact, a highly thermal expansion coefficient difference, threading dislocation densities (TDDs), and antiphase boundaries (APBs) are the crucial obstacles for developing a high-performance semiconductor laser on Si. In this regard, many approaches and strategies have been devoted to tolerantly grow III-V on Si. In this review, the history of QD laser diodes directly grown on Si-substrate is demonstrated. The benefits and the problems of III-V semiconductor materials epitaxially grown on Si are discussed. The recent progress in QD lasers grown in silicon is reviewed, focusing on InAs-QD lasers in terms of threshold current density, output optical power, emission wavelengths, and operation temperatures. The future of QD lasers monolithically grown on Si-substrate and their application are also discussed in this review.

materials science, multidisciplinary,chemistry, physical
Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Dawei Di,Ivan Perez-Wurfl,Gavin Conibeer,Martin A. Green

DOI: https://doi.org/10.1117/12.859715

2010-01-01

Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.
Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Zhao Yan,Qiang Li

DOI: https://doi.org/10.1088/1361-6463/ad26cd

2024-03-02

Journal of Physics D Applied Physics

Abstract:Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first discuss III–V lasers that are highly tolerant to dislocations, including quantum dot/dash diode lasers, interband cascade, and quantum cascade lasers grown on Si from near infrared to long-wave infrared. We then move to the selective heteroepitaxy of low dislocation density III–Vs for the bufferless lasers. Finally, we review the III–V nanowire photonic crystal lasers grown on Si, which offers a different approach to overcome material mismatch and grow dislocation free III–V structures on silicon. We start with briefly introducing the recent progress of each technology, followed with a discussion of its key advantages, research challenge and opportunities.

physics, applied
Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Mengya Liao,Siming Chen,Suguo Huo,Si Chen,Jiang Wu,Mingchu Tang,Ken Kennedy,Wei Li,Saurabh Kumar,Mickael Martin,Thierry Baron,Chaoyuan Jin,Ian Ross,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1109/jstqe.2017.2693025

IF: 4.9

2017-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology.
III-nitride semiconductor lasers grown on Si

Meixin Feng,Jianxun Liu,Qian Sun,Hui Yang

DOI: https://doi.org/10.1016/j.pquantelec.2021.100323

IF: 10.333

2021-05-01

Progress in Quantum Electronics

Abstract:<p>III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further expand their applications. Therefore, III-nitride lasers grown on Si have been pursued for about two decades. Different from GaN homoepitaxy on free-standing GaN substrates, III-nitride semiconductors grown on Si substrates are usually rich with strain and threading dislocations due to the large mismatch in both lattice constant and coefficient of thermal expansion between GaN and Si substrates, which hindered the realization of electrically injected lasing. The key challenges in the direct growth of high-quality III-nitride semiconductor laser materials on Si substrates, as well as their corresponding solutions, are discussed in detail. Afterwards, a comprehensive review is presented on the recent progress of III-nitride semiconductor lasers grown on Si, including Fabry-Pérot cavity lasers, microdisk lasers, and the lasers with nanostructures, as well as the monolithic integration of lasers on Si. Finally, the further development of III-nitride semiconductor lasers grown on Si is also discussed, including the material quality improvement and novel device structures for enhancing optical confinement and reducing electrical resistance, with a great prospect for better performance and reliability.</p>

optics,physics, applied,quantum science & technology,engineering, electrical & electronic
1.9 μm hybrid silicon/iii-v semiconductor laser

po dong,t c hu,leiqi zhang,m dinu,r f kopf,atsushi tate,l l buhl,d t neilson,xiaohua luo,tsungyang liow,guoqiang lo,yenkuang chen

DOI: https://doi.org/10.1049/el.2013.0674

2013-01-01

Electronics Letters

Abstract:A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.
Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Taojie Zhou,Mingchu Tang,Guohong Xiang,Boyuan Xiang,Suikong Hark,Mickael Martin,Thierry Baron,Shujie Pan,Jae-Seong Park,Zizhuo Liu,Siming Chen,Zhaoyu Zhang,Huiyun Liu

DOI: https://doi.org/10.1038/s41467-020-14736-9

IF: 16.6

2020-02-20

Nature Communications

Abstract:Abstract Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation with an ultra-low threshold of ~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

multidisciplinary sciences
Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Chen Shang,Kaiyin Feng,Eamonn T. Hughes,Andrew Clark,Mukul Debnath,Rosalyn Koscica,Gerald Leake,Joshua Herman,David Harame,Peter Ludewig,Yating Wan,John E. Bowers

DOI: https://doi.org/10.48550/arXiv.2206.01211

2022-06-03

Abstract:Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.

Optics,Emerging Technologies
High Speed Evanescent Quantum‐Dot Lasers on Si

Yating Wan,Chao Xiang,Joel Guo,Rosalyn Koscica,Mj Kennedy,Jennifer Selvidge,Zeyu Zhang,Lin Chang,Weiqiang Xie,Duanni Huang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1002/lpor.202100057

2021-01-01

LASER & PHOTONICS REVIEWS

Abstract:Significant improvements in III-V/Si epitaxy have pushed quantum dots (QDs) to the forefront of Si photonics. For efficient, scalable, and multifunctional integrated systems to be developed, a commercially viable solution must be found to allow efficient coupling of the QD laser output to Si waveguides. In this work, the design, fabrication, and characterization of such a platform are detailed. Record-setting evanescent QD distributed feedback lasers on Si with a 3 dB modulation bandwidth of 13 GHz, a threshold current of 4 mA, a side-mode-suppression-ratio of 60 dB, and a fundamental linewidth of 26 kHz, are reported. The maximum temperature during the backend III/V process is only 200 degrees C, which is fully compatible with CMOS process thermal budgets. The whole process is substrate agnostic and hence can leverage previous development in QD lasers grown on Si and benefit from the economy of scale. The broadband and versatile nature of the QD lasers and the Si-on-insulator low-loss waveguiding platform can be expanded to build fully functional photonic integrated circuits throughout the O band.
Monolithic integration of embedded III-V lasers on SOI

Wen-Qi Wei,An He,Bo Yang,Zi-Hao Wang,Jing-Zhi Huang,Dong Han,Ming Ming,Xuhan Guo,Yikai Su,Jian-Jun Zhang,Ting Wang

DOI: https://doi.org/10.1038/s41377-023-01128-z

2023-04-04

Light: Science and Applications

Abstract:Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

optics
E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Wenqian Liang,Wenqi Wei,Dong Han,Ming Ming,Jieyin Zhang,Zihao Wang,Xinding Zhang,Ting Wang,Jianjun Zhang

DOI: https://doi.org/10.3390/ma17081916

IF: 3.4

2024-04-22

Materials

Abstract:The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and C/L-bands InAs QD lasers on Si have been extensively investigated, but as an extended telecommunication wavelength, the E-band QD lasers directly grown on Si substrates are not available yet. Here, we demonstrate the first E-band (1365 nm) InAs QD micro-disk lasers epitaxially grown on Si (001) substrates by using a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system. The micro-disk laser device on Si was characterized with an optical threshold power of 0.424 mW and quality factor (Q) of 1727.2 at 200 K. The results presented here indicate a path to on-chip silicon photonic telecom-transmitters.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Z Ouyang,D Colucci,E M B Fahmy,A A Yimam,J Van Campernhout,B Kunert,D Van Thourhout

DOI: https://doi.org/10.1364/OL.531635

2024-08-15

Abstract:The monolithic growth of direct-bandgap III-V materials directly on a Si substrate is a promising approach for the fabrication of complex silicon photonic integrated circuits including light sources and amplifiers. It remains challenging to realize practical, reliable, and efficient light emitters due to misfit defect formation during the epitaxial growth. Exploiting nano-ridge engineering (NRE), III-V nano-ridges with high crystal quality were achieved based on aspect ratio defect trapping inside narrow trenches. In an earlier work, we used an etched grating to create distributed feedback lasers from these nano-ridges. Here we deposited an amorphous silicon grating on the top of the nano-ridge. Under pulsed optical pumping, a ∼7.84 kW/cm2 lasing threshold was observed, ∼5 times smaller compared to devices with an etched grating inside the nano-ridge. Compared to the etched grating, the amorphous silicon grating introduces no extra carrier loss channels through surface state defects, which is believed to be the origin of the lower threshold. This low threshold again demonstrates the high quality of the epitaxial deposited material and may provide a route toward further optimizing the electrically driven devices.
Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

Qi Wen Wei,Huang Jingzhi,Ji Zitao,Dong Han,Yang Bo,Chen Jiajian,Qin Jiale,Cui Yiou,Zihao Wang,Ting Wang,Jianjun Zhang

DOI: https://doi.org/10.1088/1361-6463/ac8431

2022-07-27

Abstract:Direct epitaxial growth of III-V quantum dot (QD) lasers on Si (001) substrates is recognized as a promising and low-cost method for realizing high-performance on-chip light sources in silicon photonic integrated circuits (PICs). Recently, the CMOS-compatible patterned Si (001) substrates with sawtooth structures have been widely implemented to suppress the lattice mismatch induced defects and antiphase boundaries (APBs) for heteroepitaxial growth of high-quality III-V materials on Si. Considerable progresses have been made on high-performance 1300 nm InAs/GaAs QD lasers on Si (001). Here, we report a thermal stress-relaxed (111)-faceted silicon hollow structures by homoepitaxial method for reliable InAs/GaAs QD lasers growing on Si (001) substrates. Both simulation analysis and experimental results indicate that the voids buried below the sawtooth structures can release about 9% of the accumulative thermal stress of the III-V/Si system during the cooling process. Furthermore, electrically pumped InAs/GaAs QD narrow ridge lasers are grown and fabricated on the specially designed Si (001) platforms with a maximum operation temperature up to 90 °C under continuous-wave (CW) operation mode. Additionally, an extrapolated lifetime of over 5300 hours is calculated from the reliability test at 65 °C. These results lead toward high-yield, scalable, and reliable III-V lasers on Si (001) substrates for PICs.
Bragg-Spaced Quantum-Well Nanorod In-Plane Lasers on Silicon

Douglas R. Dykaar,Hrilina Ghosh,Songrui Zhao,Siva Sivoththaman

DOI: https://doi.org/10.1109/led.2024.3375800

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:We present a straightforward design and simulation results for fabricating III-V laser diodes on silicon substrates: A linear array of Bragg-spaced Quantum-Well Nanorods.

engineering, electrical & electronic
Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Yong Du,Wenqi Wei,Buqing Xu,Guilei Wang,Ben Li,Yuanhao Miao,Xuewei Zhao,Zhenzhen Kong,Hongxiao Lin,Jiahan Yu,Jiale Su,Yan Dong,Wenwu Wang,Tianchun Ye,Jianjun Zhang,Henry H. Radamson

DOI: https://doi.org/10.3390/mi13101579

IF: 3.4

2022-09-23

Micromachines

Abstract:The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm−2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III−V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Monolithic Quantum Dot Discrete Mode Laser on SOI

Jingzhi Huang,Wenqi Wei,Bo Yang,Dong Han,Zihao Wang,Jianjun Zhang,Ting Wang

DOI: https://doi.org/10.1021/acsphotonics.3c00172

IF: 7

2023-05-25

ACS Photonics

Abstract:Single-longitudinal-mode light sources on a silicon platform exhibit tremendous potential in data transmission, integrated on-chip optical interconnects, and optical ranging. A unique InAs/GaAs quantum dot discrete mode (DM) laser directly grown on a silicon-on-insulator (SOI) substrate with embedded silicon gratings has been demonstrated here, which is regrowth-free and compatible with integrated silicon photonics. Attributed to refractive index perturbation and optical feedback from embedded silicon gratings prepatterned on the SOI substrate, this DM laser can provide stable single-mode operation with a threshold current of 45 mA and an output power of 9 mW. The maximum optical signal-to-noise ratio (OSNR) achieved is 43.6 dB with an optical linewidth of 157 kHz. The 3 dB direct modulation bandwidth is measured as 3.6 GHz. The DM laser can be externally modulated at 70 Gbit/s with non-return-to-zero (NRZ) modulation format and 80 Gbit/s under 4-level pulsed amplitude (PAM4) modulation format. Such SOI-based DM laser paves the way toward large-scale and high-power on-chip integrated lasers.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Alexey E Zhukov,Natalia V Kryzhanovskaya,Eduard I Moiseev,Anna S Dragunova,Mingchu Tang,Siming Chen,Huiyun Liu,Marina M Kulagina,Svetlana A Kadinskaya,Fedor I Zubov,Alexey M Mozharov,Mikhail V Maximov

DOI: https://doi.org/10.3390/ma13102315

2020-05-18

Abstract:An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15-31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Imad Limame,Peter Ludewig,Ching-Wen Shih,Marcel Hohn,Chirag C. Palekar,Wolfgang Stolz,Stephan Reitzenstein

2023-11-25

Abstract:We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP buffer and defect-reducing layers. These epitaxial quantum dots exhibit optical properties akin to those on traditional GaAs substrates, promising vast potential for the heteroepitaxy approach. They demonstrate strong multi-photon suppression with $g^{(2)}(\tau)=(3.7\pm 0.2) \times 10^{-2}$ and high photon indistinguishability $V=(66\pm 19)$% under non-resonance excitation. We achieve up to ($18\pm 1$)% photon extraction efficiency with a backside distributed Bragg mirror, marking a crucial step toward silicon-based quantum nanophotonics.

Mesoscale and Nanoscale Physics,Applied Physics
Research Progress of Silicon Light Source

Shen Hao,Li Dong-Sheng,Yang De-Ren

DOI: https://doi.org/10.7498/aps.64.204208

2015-01-01

Abstract:To meet the requirements for high speed, low cost, and more information capacity, silicon photonics has been booming in recent years. Silicon photonics covers a very wide field. For the silicon photonics, researchers have successfully achieved silicon-based optical waveguides, switches, modulators, and detectors. But the problem of silicon based light source has not been really resolved, which has become a primary bottleneck for further developing the silicon photonics. The momentum of a phonon is required to allow an electron to transit from the minimum of the conduction band to the maximum of the valence band in Si because of the indirect bandgap. This two-particle process with a low probability makes it difficult to achieve high-efficiency silicon-based light source by itself. However, much effort has been made to characterize and understand the light-emission phenomena of silicon-based devices. Also, more attempts were made to enhance the emission efficiency of silicon. Practical silicon lasers are very important for silicon photonics and have been a long goal for semiconductor scientists. A number of important breakthroughs in the past decade have focused on silicon as a photonic platform thanks to the efforts of scientists. In this review, we introduce the recent progress of silicon-based luminescence materials, silicon light emitting diodes and silicon lasers. In the first part of this paper, common types of silicon-based light emitting materials, including porous silicon, silicon nanocrystals, rare earth-doped silicon, silicon defect emission, germanium on silicon and semiconducting silicides are comprehensively reviewed. Among them, the quantum effects and surface effects of low-dimensional silicon can greatly enhance the light emission efficiency. The erbium atoms in silicon-based rare earth materials can produce the light emission at communication wavelength band independently of the host. The transition from the lowest excited state to the 4f ground state yields light at 1.54 m. Moreover the emission energy is independent of the temperature due to the inner atomic transition. Group IV materials grown on silicon such as Ge and GeSn alloy can change from indirect bandgap into direct bandgap by introducing mechanically strain and modifying the component. Strong enhancement of photoluminescence and net gain emerging from the direct transition are very significant for fabricating the devices. In the second part, different light emitting diodes (LEDs) fabricated with above luminescent materials are introduced. The Si PN diodes were once popular at the earlier research stage. One approach was to modify the effective surface on high-purity single crystal silicon and the other idea was to use optically active defects in silicon. Ten years later, silicon LEDs in which the dressed-photon-phonons assisted method is used, made the Si PN diode rejuvenated. LEDs fabricated on nano-structured Si and silicon-based film were limited in the optoelectronic integration since the luminescence wavelength is not corresponding to the low-loss communication region. Although erbium-doped and Er silicate LEDs emit suitable light, their high turn-on voltage and low luminescence efficiency block the practical application. The researches of Ge-on-Si LED mainly focus on modifying the band structure by introducing strain and n-doping. In the third part, firstly we summarize the basic rules of the silicon laser. Then, we review the most recent progress in the field. Nanometer Si with periodic array can only behave unambiguous laser action using optical pumping and at very low temperature. Low threshold silicon Raman lasers with racetrack ring resonator cavities can only stop on paper also due to the difficulty in electrical pumping. The Ge-on-Si lasers operating at room temperature by optical and electrical pumping were accomplished in the past 5 years. The GeSn laser that is CMOS-compatible also came into being this year. Although so far, lasing has been implemented only by using pulsed optical pumping and stopped working at 90 K, this first demonstration of lasing in a direct-gap group IV alloy grown on standard silicon substrates is potentially an important step on the way to a platform of fully integrated silicon-based photonics. Hybrid III-V-on-Si lasers are considered as one of the most practical means due to the excellent photoelectric properties and mature preparation technology. Finally, current problems and future development direction in the silicon light source are also presented briefly.

III-V Quantum Dot Lasers Monolithically Grown on Silicon.

Tunable Quantum Dot Lasers Grown Directly on Silicon

Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

III-nitride semiconductor lasers grown on Si

1.9 μm hybrid silicon/iii-v semiconductor laser

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

High Speed Evanescent Quantum‐Dot Lasers on Si

Monolithic integration of embedded III-V lasers on SOI

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

Bragg-Spaced Quantum-Well Nanorod In-Plane Lasers on Silicon

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Monolithic Quantum Dot Discrete Mode Laser on SOI

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Research Progress of Silicon Light Source