Bragg-Spaced Quantum-Well Nanorod In-Plane Lasers on Silicon

Douglas R. Dykaar,Hrilina Ghosh,Songrui Zhao,Siva Sivoththaman

DOI: https://doi.org/10.1109/led.2024.3375800

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:We present a straightforward design and simulation results for fabricating III-V laser diodes on silicon substrates: A linear array of Bragg-spaced Quantum-Well Nanorods.

engineering, electrical & electronic

What problem does this paper attempt to address?

1.9 μm hybrid silicon/iii-v semiconductor laser

po dong,t c hu,leiqi zhang,m dinu,r f kopf,atsushi tate,l l buhl,d t neilson,xiaohua luo,tsungyang liow,guoqiang lo,yenkuang chen

DOI: https://doi.org/10.1049/el.2013.0674

2013-01-01

Electronics Letters

Abstract:A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.
Tunable Quantum Dot Lasers Grown Directly on Silicon

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Songtao Liu,Chao Xiang,Chen Shang,Jian-Jun He,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1364/optica.6.001394

IF: 10.4

2019-01-01

Optica

Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.
InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Z Ouyang,D Colucci,E M B Fahmy,A A Yimam,J Van Campernhout,B Kunert,D Van Thourhout

DOI: https://doi.org/10.1364/OL.531635

2024-08-15

Abstract:The monolithic growth of direct-bandgap III-V materials directly on a Si substrate is a promising approach for the fabrication of complex silicon photonic integrated circuits including light sources and amplifiers. It remains challenging to realize practical, reliable, and efficient light emitters due to misfit defect formation during the epitaxial growth. Exploiting nano-ridge engineering (NRE), III-V nano-ridges with high crystal quality were achieved based on aspect ratio defect trapping inside narrow trenches. In an earlier work, we used an etched grating to create distributed feedback lasers from these nano-ridges. Here we deposited an amorphous silicon grating on the top of the nano-ridge. Under pulsed optical pumping, a ∼7.84 kW/cm2 lasing threshold was observed, ∼5 times smaller compared to devices with an etched grating inside the nano-ridge. Compared to the etched grating, the amorphous silicon grating introduces no extra carrier loss channels through surface state defects, which is believed to be the origin of the lower threshold. This low threshold again demonstrates the high quality of the epitaxial deposited material and may provide a route toward further optimizing the electrically driven devices.
Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

Hyunseok Kim,Wook-Jae Lee,Alan C. Farrell,Pradeep Senanayake,Diana L. Huffaker

DOI: https://doi.org/10.1021/acs.nanolett.7b00384

2017-01-11

Abstract:Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and the capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits (PICs). Here, we demonstrate for the first time optically pumped III-V nanowire array lasers monolithically integrated on silicon-on-insulator (SOI) platform. Selective-area growth of purely single-crystalline InGaAs/InGaP core/shell nanowires on an SOI substrate enables the nanowire array to form a photonic crystal nanobeam cavity with superior optical and structural properties, resulting in the laser to operate at room temperature. We also show that the nanowire array lasers are effectively coupled with SOI waveguides by employing nanoepitaxy on a pre-patterned SOI platform. These results represent a new platform for ultra-compact and energy-efficient optical links, and unambiguously point the way toward practical and functional nanowire lasers.

Mesoscale and Nanoscale Physics,Optics
Design of high-quality reflectors for vertical III–V nanowire lasers on Si

Xin Zhang,Hui Yang,Yunyan Zhang,Huiyun Liu

DOI: https://doi.org/10.1088/1361-6528/ac2f22

IF: 3.5

2021-10-29

Nanotechnology

Abstract:Abstract Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III–V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from vertically-standing NWs on silicon is much more difficult to achieve compared with NWs broken off from substrates, causing significant challenges in the integration. Here, the challenge of achieving vertically-standing NW lasers is systematically analysed with III–V materials, e.g. GaAs(P) and InAs(P). The poor optical reflectivity at the NW/Si interface results severe optical field leakage to the substrate, and the commonly used SiO 2 or Si 2 N 3 dielectric mask at the interface can only improve it to ∼10%, which is the major obstacle for achieving low-threshold lasing. A NW super lattice distributed Bragg reflector is therefore proposed, which is able to greatly improve the reflectivity to >97%. This study provides a highly-feasible method to greatly improve the performance of vertically-standing NW lasers, which can boost the rapid development of Si photonics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Mengya Liao,Siming Chen,Suguo Huo,Si Chen,Jiang Wu,Mingchu Tang,Ken Kennedy,Wei Li,Saurabh Kumar,Mickael Martin,Thierry Baron,Chaoyuan Jin,Ian Ross,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1109/jstqe.2017.2693025

IF: 4.9

2017-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology.
Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Taojie Zhou,Mingchu Tang,Guohong Xiang,Boyuan Xiang,Suikong Hark,Mickael Martin,Thierry Baron,Shujie Pan,Jae-Seong Park,Zizhuo Liu,Siming Chen,Zhaoyu Zhang,Huiyun Liu

DOI: https://doi.org/10.1038/s41467-020-14736-9

IF: 16.6

2020-02-20

Nature Communications

Abstract:Abstract Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation with an ultra-low threshold of ~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

multidisciplinary sciences
Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review

Rehab Joko Hussin,Ivan B. Karomi

DOI: https://doi.org/10.1007/s12633-024-03098-2

IF: 3.4

2024-07-26

Silicon

Abstract:Enormous advantages can be brought by using silicon as a substrate for III-V photonic integrated circuit quantum dot (QD) lasers, such as a low cost, high bandwidth transmission data, on-chip light sources, etc. However, several difficulties arise when III-V QD lasers are grown directly on Si-substrate, mainly due to high lattice mismatching between the III-V components and the silicon wafer. In fact, a highly thermal expansion coefficient difference, threading dislocation densities (TDDs), and antiphase boundaries (APBs) are the crucial obstacles for developing a high-performance semiconductor laser on Si. In this regard, many approaches and strategies have been devoted to tolerantly grow III-V on Si. In this review, the history of QD laser diodes directly grown on Si-substrate is demonstrated. The benefits and the problems of III-V semiconductor materials epitaxially grown on Si are discussed. The recent progress in QD lasers grown in silicon is reviewed, focusing on InAs-QD lasers in terms of threshold current density, output optical power, emission wavelengths, and operation temperatures. The future of QD lasers monolithically grown on Si-substrate and their application are also discussed in this review.

materials science, multidisciplinary,chemistry, physical
Novel integration technique for silicon/III-V hybrid laser

Po Dong,Ting-Chen Hu,Tsung-Yang Liow,Young-Kai Chen,Chongjin Xie,Xianshu Luo,Guo-Qiang Lo,Rose Kopf,Alaric Tate

DOI: https://doi.org/10.1364/OE.22.026854

2014-11-03

Abstract:Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique.
Design of High-Quality Reflectors for Vertical Nanowire Lasers on Si

Xing Zhang,Hui Yang,Yunyan Zhang,Huiyun Liu

DOI: https://doi.org/10.1088/1361-6528/ac2f22

2021-03-31

Abstract:Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from vertically-standing NWs on silicon is much more difficult to achieve compared with NWs broken off from substrates, causing significant challenges in the integration. Here, the challenge of achieving vertically-standing NW lasers is systematically analyzed. The poor optical reflectivity at the NW/Si interface results severe optical field leakage to the substrate, and the commonly used SiO2 or Si2N3 dielectric mask at the interface can only improve it to ~10%, which is the major obstacle for achieving low-threshold lasing. A NW super lattice distributed Bragg reflector is therefore proposed, which is able to greatly improve the reflectivity to >97%. This study provides a highly-feasible method to greatly improve the performance of vertically-standing NW lasers, which can boost the rapid development of Si photonics.

Optics
Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

PJ McCann,IN Chao,H Sachar,D McAlister,CP Li,XM Fang,HZ Wu,K Namjou

DOI: https://doi.org/10.1016/s1386-1425(99)00071-2

IF: 4.831

1999-01-01

Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy

Abstract:This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Yannick De Koninck,Charles Caer,Didit Yudistira,Marina Baryshnikova,Huseyin Sar,Ping-Yi Hsieh,Saroj Kanta Patra,Nadezda Kuznetsova,Davide Colucci,Alexey Milenin,Andualem Ali Yimam,Geert Morthier,Dries Van Thourhout,Peter Verheyen,Marianna Pantouvaki,Bernardette Kunert,Joris Van Campenhout

2023-07-20

Abstract:Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trapping. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.

Optics,Applied Physics
Optically Pumped Mid-Infrared Light Emitter on Silicon

L. A. Elizondo,Y. Li,A. Sow,R. Kamana,H. Z. Wu,S. Mukherjee,F. Zhao,Z. Shi,P. J. McCann

DOI: https://doi.org/10.1063/1.2729467

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:Characterization of a IV-VI semiconductor structure consisting of a PbSe/PbSrSe multiple quantum well (MQW) active region between distributed Bragg reflectors grown by molecular beam epitaxy on a Si(111) substrate is described. Pulsed photoluminescence (PL) spectra exhibited interband electronic transition energies ranging linearly with temperature from 231.4 meV at 150 K to 299.4 meV at 300 K, while continuous wave (cw) PL spectra exhibited only the vertical optical cavity mode with emission varying between 299.2 meV at 150 K to 301.1 meV at 300 K. A maximum PL emission power of approximately 1.8 mW was obtained for cw diode laser pumping when the heat sink temperature was 200 K. Data are consistent with a localized epilayer heating effect of about 100 deg where the interband electronic transition energy is coincident with the vertical optical cavity mode. In spite of significant sample heating and associated thermal expansion mismatch stress, cw PL emission intensity was stable with no noticeable degradation in intensity after repeated measurements. These results show that IV-VI epitaxial layers on silicon are viable materials for fabricating reliable light emitters for on-chip optical interconnects.
Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Jia Xu Brian Sia,Xiang Li,Wanjun Wang,Zhongliang Qiao,Xin Guo,Jin Zhou,Callum G. Littlejohns,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.400666

IF: 3.8

2020-01-01

Optics Express

Abstract:The wavelength region about of 1650 nm enables pervasive applications. Some instances include methane spectroscopy, free-space/fiber communications, LIDAR, gas sensing (i.e. C2H2, C2H4, C3H8), surgery and medical diagnostics. In this work, through the hybrid integration between an III-V optical amplifier and an extended, low-loss wavelength tunable silicon Vernier cavity, we report for the first time, a III-V/silicon hybrid wavelength-tunable laser covering the application-rich wavelength region of 1647-1690 nm. Room-temperature continuous wave operation is achieved with an output power of up to 31.1 mW, corresponding to a maximum side-mode suppression ratio of 46.01 dB. The laser is ultra-coherent, with an estimated linewidth of 0.7 kHz, characterized by integrating a 35 km-long recirculating fiber loop into the delayed self-heterodyne interferometer setup. The laser linewidth is amongst the lowest in hybrid/heterogeneous III-V/silicon lasers.
Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Zhao Yan,Qiang Li

DOI: https://doi.org/10.1088/1361-6463/ad26cd

2024-03-02

Journal of Physics D Applied Physics

Abstract:Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first discuss III–V lasers that are highly tolerant to dislocations, including quantum dot/dash diode lasers, interband cascade, and quantum cascade lasers grown on Si from near infrared to long-wave infrared. We then move to the selective heteroepitaxy of low dislocation density III–Vs for the bufferless lasers. Finally, we review the III–V nanowire photonic crystal lasers grown on Si, which offers a different approach to overcome material mismatch and grow dislocation free III–V structures on silicon. We start with briefly introducing the recent progress of each technology, followed with a discussion of its key advantages, research challenge and opportunities.

physics, applied
III-Nitride Nanocrystal Laser Diodes and Integrated Photonics

Zetian Mi,Xianhe Liu,Yi Sun,David Laleyan,Mohammad Soltani

2019-01-01

Abstract:We demonstrate high performance III-nitride nanocrystal surface emitting laser diodes operating in the visible and UV spectra, as well as high Q microring resonators using single crystal aluminum nitride in the UV, visible and infrared.
Monolithic integration of embedded III-V lasers on SOI

Wen-Qi Wei,An He,Bo Yang,Zi-Hao Wang,Jing-Zhi Huang,Dong Han,Ming Ming,Xuhan Guo,Yikai Su,Jian-Jun Zhang,Ting Wang

DOI: https://doi.org/10.1038/s41377-023-01128-z

2023-04-04

Light: Science and Applications

Abstract:Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

optics
Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

Gyeong Cheol Park,Weiqi Xue,Alireza Taghizadeh,Elizaveta Semenova,Kresten Yvind,Jesper Mørk,Il-Sug Chung

DOI: https://doi.org/10.48550/arXiv.1411.2483

2014-11-11

Abstract:We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It has the potential for ultrahigh-speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.

Optics
Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths

P. Schmiedeke,C. Doganlar,H. W. Jeong,M. Döblinger,J. J. Finley,G. Koblmüller

DOI: https://doi.org/10.1063/5.0191070

IF: 4

2024-02-12

Applied Physics Letters

Abstract:Conventional binary III–V nanowire (NW) lasers face substantial challenges in tuning their lasing emission to silicon transparent wavelengths and require complex quantum heterostructure designs for realizing on-chip integrated nanolasers. Here, an alternative and straightforward approach is reported by developing ternary III–V NW-lasers in the form of surface-passivated GaAsSb NW-lasers grown on silicon. High-quality GaAsSb NW-cavities with high Sb-content (>20%) and extended lengths (>5 μm) are shown to exhibit striking radiative efficiency enhancements (∼200-fold) when passivated by closely lattice-matched InAlGaAs shell layers. Utilizing this core–shell approach, optically pumped lasing is then demonstrated from single GaAsSb NW-lasers with lasing threshold as low as 3.2 μJ/cm2 at temperatures up to 250 K and emission wavelengths of ∼1.1–1.2 μm. Analysis of the optical mode spectra and mode-dependent threshold gain further shows that lasing is induced by the fundamental HE11 modes, and likely even lower thresholds may be achieved by establishing the TE01 mode at increased NW-cavity diameters.

physics, applied
Laser nanofabrication inside silicon with spatial beam modulation and anisotropic seeding

Rana Asgari Sabet,Aqiq Ishraq,Alperen Saltik,Mehmet Bütün,Onur Tokel

DOI: https://doi.org/10.1038/s41467-024-49303-z

2024-07-16

Abstract:Nanofabrication in silicon, arguably the most important material for modern technology, has been limited exclusively to its surface. Existing lithography methods cannot penetrate the wafer surface without altering it, whereas emerging laser-based subsurface or in-chip fabrication remains at greater than 1 μm resolution. In addition, available methods do not allow positioning or modulation with sub-micron precision deep inside the wafer. The fundamental difficulty of breaking these dimensional barriers is two-fold, i.e., complex nonlinear effects inside the wafer and the inherent diffraction limit for laser light. Here, we overcome these challenges by exploiting spatially-modulated laser beams and anisotropic feedback from preformed subsurface structures, to establish controlled nanofabrication capability inside silicon. We demonstrate buried nanostructures of feature sizes down to 100 ± 20 nm, with subwavelength and multi-dimensional control; thereby improving the state-of-the-art by an order-of-magnitude. In order to showcase the emerging capabilities, we fabricate nanophotonics elements deep inside Si, exemplified by nanogratings with record diffraction efficiency and spectral control. The reported advance is an important step towards 3D nanophotonics systems, micro/nanofluidics, and 3D electronic-photonic integrated systems.

Bragg-Spaced Quantum-Well Nanorod In-Plane Lasers on Silicon

1.9 μm hybrid silicon/iii-v semiconductor laser

Tunable Quantum Dot Lasers Grown Directly on Silicon

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

Design of high-quality reflectors for vertical III–V nanowire lasers on Si

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review

Novel integration technique for silicon/III-V hybrid laser

Design of High-Quality Reflectors for Vertical Nanowire Lasers on Si

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Optically Pumped Mid-Infrared Light Emitter on Silicon

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

III-Nitride Nanocrystal Laser Diodes and Integrated Photonics

Monolithic integration of embedded III-V lasers on SOI

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths

Laser nanofabrication inside silicon with spatial beam modulation and anisotropic seeding