Epitaxial growth and band structure of antiferromagnetic Mott insulator CeOI

Xinqiang Cai,Zhilin Xu,Hui Zhou,Jun Ren,Na Li,Sheng Meng,Shuai-Hua Ji,Xi Chen
DOI: https://doi.org/10.1103/PhysRevMaterials.4.064003
IF: 3.98
2020-01-01
Physical Review Materials
Abstract:The van der Waals material CeOI is predicted to be a layered antiferromagnetic Mott insulator by density-functional theory +U calculation. We successfully grow the CeOI films down to monolayer on graphene/6H-SiC(0001) substrate by using molecular beam epitaxy. Films are studied by in situ scanning tunneling microscopy and spectroscopy, which shows a band gap of 4.4 eV. A metallic phase with composition unidentified also exists. This rare earth oxyhalide adds a member to the two-dimensional magnetic materials.
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