Abstract:With the rapid development of 5 G communications, artificial intelligence, the Internet of Things and other fields, the increasing demand for data transmission in communication networks has resulted in optical interconnection gradually replacing traditional electrical interconnection in communication. As one of the core devices, the research and development of silicon-based photodetectors has garnered significant attention. Particularly, the advancement of germanium photodetectors (Ge PDs) holds crucial research significance for both academia and industry. Recently, a variety of high-performance photodetectors based on various photoelectric structures, emerging technologies and physical effects have been demonstrated on silicon photonic platforms. In this review, the research progress of Ge PDs is summarized, and the key technologies and processes in the latest development are analyzed. Firstly, the basic principles and performance of photodetectors are briefly introduced. Secondly, the key technology and basic structure of silicon and Ge PD are discussed. The development history of Ge PDs is then reviewed, and new mechanism design and performance improvement technologies are discussed. Finally, the current research frontiers and hotspots of high-performance Ge PDs are summarized, and the future development trends are discussed. It is hoped that this review will be helpful for readers to gain more insights into the latest advancements in high-performance photodetectors in silicon photonics and contribute to further development.

Germanium Photodetector with Alleviated Space-Charge Effect

Integrated High-Power Germanium Photodetectors Assisted by Light Field Manipulation.

High Speed and High Power Polarization Insensitive Germanium Photodetector with Lumped Structure.

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Germanium Photodetector with Carrier Acceleration

80 GHz Germanium Waveguide Photodiode Enabled by Parasitic Parameter Engineering

Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

Performance optimization of waveguided germanium pin photodetector for optical communication applications

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Germanium photodetector with 60 GHz bandwidth using inductive gain peaking.

Ultralow Dark Current Small-Sized Germanium Photodetectors with a Self-Forming Guard Ring Structure

High-Power Ge/Si Waveguide Photodetector

High-performance Ge Photodetectors on Silicon Photonics Platform for Optical Interconnect

High-performing Silicon-Based Germanium Schottky Photodetector with ITO Transparent Electrode

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Integrated High Power Germanium Photodetectors Assisted by Optical Field Manipulation.

Photonic crystal enabled manipulation of optical and electric field in germanium avalanche photodetectors

Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator

Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes