Abstract:With the rapid development of 5 G communications, artificial intelligence, the Internet of Things and other fields, the increasing demand for data transmission in communication networks has resulted in optical interconnection gradually replacing traditional electrical interconnection in communication. As one of the core devices, the research and development of silicon-based photodetectors has garnered significant attention. Particularly, the advancement of germanium photodetectors (Ge PDs) holds crucial research significance for both academia and industry. Recently, a variety of high-performance photodetectors based on various photoelectric structures, emerging technologies and physical effects have been demonstrated on silicon photonic platforms. In this review, the research progress of Ge PDs is summarized, and the key technologies and processes in the latest development are analyzed. Firstly, the basic principles and performance of photodetectors are briefly introduced. Secondly, the key technology and basic structure of silicon and Ge PD are discussed. The development history of Ge PDs is then reviewed, and new mechanism design and performance improvement technologies are discussed. Finally, the current research frontiers and hotspots of high-performance Ge PDs are summarized, and the future development trends are discussed. It is hoped that this review will be helpful for readers to gain more insights into the latest advancements in high-performance photodetectors in silicon photonics and contribute to further development.

Integrated High-Power Germanium Photodetectors Assisted by Light Field Manipulation.

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

High-Power Ge/Si Waveguide Photodetector

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

High-speed Ge-on-GaAs Photodetector

High-performance Ge Photodetectors on Silicon Photonics Platform for Optical Interconnect

Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

PIC-integrable high-responsivity germanium waveguide photodetector in the C plus L band

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band.

High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode.

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

High performance photodetectors by integrating CsPbBr3 perovskite directly on the germanium wafer

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform