High performance photodetectors by integrating CsPbBr3 perovskite directly on the germanium wafer

Guoliang Xiong,Gang Zhang,Wenlin Feng

DOI: https://doi.org/10.1016/j.materresbull.2024.112959

IF: 5.6

2024-06-21

Materials Research Bulletin

Abstract:Lead halide perovskites are a promising candidate for the development of novel optoelectronic devices. Although substantial development has been achieved after years of research, it is still a challenge to prepare large-area high-quality CsPbBr 3 thin films by simple processes. In this work, CsPbBr 3 film can be used as a UV–Vis absorption active layer of heterojunction photodetector and a Ge-based infrared anti-reflective coating to optimize the photodetection performance of the device. CsPbBr 3 /p-Ge heterojunction photodetector exhibits self-powered (0 V) and broadband characteristics (365–1550 nm), the responsivity is 64 mA/W and the specific detectivity is 1.2 × 10 12 Jones under 0 V bias and 1550 nm illumination. The rise and decay times of the device are 12.3 μs and 13.4 μs under 1310 nm illumination and 20 kHz operating frequency, respectively. This work further promotes the potential application and development of CsPbBr 3 perovskites in integrated optoelectronic devices.

materials science, multidisciplinary