Visible–ultraviolet dual-band photodetectors based on an all-inorganic CsPbCl3/p-GaN heterostructure

Bingjie Ye,Boxiang Wang,Yan Gu,Jiarui Guo,Xiumei Zhang,Weiying Qian,Xiangyang Zhang,Guofeng Yang,Zhixing Gan,Yushen Liu

DOI: https://doi.org/10.1039/d3na01009k

IF: 5.598

2024-05-03

Nanoscale Advances

Abstract:All-inorganic metal halide perovskites (MHPs) have attracted increasing attention because of their high thermal stability and band gap tunability. Among them, CsPbCl 3 is considered a promising semiconductor material for visible–ultraviolet dual-band photodetectors because of its excellent photoelectric properties and suitable band gap value. In this work, we fabricated a visible–ultraviolet dual-band photodetector based on a CsPbCl 3 /p-GaN heterojunction using the spin coating method. The formation of the heterojunction enables the device to exhibit obvious dual-band response behavior at positive and negative bias voltages. At the same time, the dark current of the device can be as low as 2.42 × 10 −9 A, and the corresponding detection rate can reach 5.82 × 10 10 Jones. In addition, through simulation calculations, it was found that the heterojunction has a type II energy band arrangement, and the heterojunction response band light absorption is significantly enhanced. The type II energy band arrangement will separate electron–hole pairs more effectively, which will help improve device performance. The successful implementation of visible–ultraviolet dual-band photodetectors based on a CsPbCl 3 /p-GaN heterojunction provides guidance for the application of all-inorganic MHPs in the field of multi-band photodetectors.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a visible - ultraviolet dual - band photodetector based on the all - inorganic metal halide perovskite (MHP) CsPbCl₃ and p - type gallium nitride (p - GaN) heterojunction. Specifically, the research aims to achieve the following goals by constructing the CsPbCl₃/p - GaN heterojunction:

1. **Improve photoelectric performance**: By forming the CsPbCl₃/p - GaN heterojunction, enhance the dual - band response behavior of the device under forward and reverse bias, while reducing the dark current and increasing the detection rate.
2. **Optimize energy band structure**: Through simulation calculations, verify that the heterojunction has a type - II energy band alignment, which can separate electron - hole pairs more effectively, thereby improving device performance.
3. **Expand the application range**: Explore the application potential of CsPbCl₃ in high - performance multi - band photodetectors, especially in fields such as environmental sensors and optical communications.

Through experiments and theoretical simulations, the paper shows the broadband photoelectric response characteristics of the CsPbCl₃/p - GaN heterojunction in the visible and ultraviolet regions, and analyzes in detail the underlying physical mechanisms. These results provide important guidance for the application of all - inorganic MHPs in the field of multi - band photodetectors.