High-Performance, Vacuum-Free, and Self-Powered CsPbIBr 2 Photodetectors Boosted by Ultra-Wide-Bandgap Ga 2 O 3 Interlayer

Zeyulin Zhang,Wentao Zhang,Qubo Jiang,Ziming Wei,Yuting Zhang,Hai Long You,Minyu Deng,Weidong Zhu,Jincheng Zhang,Chunfu Zhang,Yue Hao
DOI: https://doi.org/10.1109/led.2020.3017369
IF: 4.8157
2020-10-01
IEEE Electron Device Letters
Abstract:In this letter, ultra-wide-bandgap Ga2O3 as the interlayer is grown by mist chemical vapor deposition (mist-CVD) between perovskite and TiO2 electron transport layer in perovskite photodetectors (PDs). To get a stable working condition and low-cost fabrication, all-inorganic CsPbIBr2 is adopted and the expensive vacuum-deposited metal electrode is replaced by printing carbon paste. The vacuum-free, self-powered CsPbIBr2 PD with Ga2O3 interlayer achieves an obviously improved performance, with a low dark current of ${\sf 4.15}\times {\sf 10}^{- {\sf 9}}$ A, high responsibility of 0.22 A/W, fast response time of $1.83\mu \text{s}$ , and high peak specific detectivity of ${\sf 1.83}\times {\sf 10}^{\sf 12}$ Jones. This work provides a strategy to develop high-performance self-powered PDs with the ultra-wide-bandgap Ga2O3 interlayer and a reduced cost.
engineering, electrical & electronic
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