Structural, optical, electrical and deliquescent properties of AlSb:Cu thin films prepared by magnetron sputtering

Yixuan Pei,Hongbo Yan,Rui Xiao,Bing Li,Ke Yang,Huijin Song
DOI: https://doi.org/10.1016/j.vacuum.2020.109341
IF: 4
2020-01-01
Vacuum
Abstract:The films with AlSb/Cu/AlSb/Cu/AlSb/Cu structure were deposited on glass substrate using copper target and aluminum-antimony alloying target by magnetron sputtering technology, and then annealed at different temperatures to obtain Cu-doped AlSb thin films. The phase, vibration modes, optical, electrical properties of the as-prepared AlSb:Cu films were systematically investigated using XRD, Raman spectroscopy, UV-VIS-NIR and two-probe high temperature system. XRD measurement and Raman spectroscopy confirmed that when the annealing temperature was 500 °C, the AlSb:Cu film had high crystallinity. The band gap of AlSb:Cu film was 1.18 eV at the optimum annealing temperature of 500 °C. The effect of different annealing temperature on the band gap of AlSb:Cu thin films was not obvious. The results of the electrical measurement showed that the conductivity activation energy of AlSb:Cu films was 0.476 eV. After annealing treatment, the atomic ratio of the AlSb:Cu film was 18.10:21.88:2.90 (Al:Sb:Cu). In addition, compared with the undoped AlSb thin film, the copper-doped can effectively slow the deliquescence speed.
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