Lateral Modulation of Magnetic Anisotropy in Tricolor 3d–5d Oxide Superlattices
Zengxing Lu,Jingwu Liu,Lijie Wen,Jiatai Feng,Shuai Kong,Xuan Zheng,Sheng Li,Peiheng Jiang,Zhicheng Zhong,Junfa Zhu,Xianfeng Hao,Zhiming Wang,Run-Wei Li
DOI: https://doi.org/10.1021/acsaelm.1c00658
IF: 4.494
2021-09-19
ACS Applied Electronic Materials
Abstract:Manipulating magnetic anisotropy (MA) purposefully in transition metal oxides (TMOs) enables the development of oxide-based spintronic devices with practical applications. Here, we report a pathway to reversibly switch the lateral magnetic easy-axis via interfacial oxygen octahedral coupling (OOC) effects in 3d–5d tricolor superlattices, i.e., [SrIrO3,mRTiO3,SrIrO3,2La0.67Sr0.33MnO3]10 (RTiO3: SrTiO3 and CaTiO3). In the heterostructures, the anisotropy energy (MAE) is enhanced over one magnitude to ∼106 erg/cm3 compared to La0.67Sr0.33MnO3 films. Moreover, the magnetic easy-axis is reversibly reoriented between (100) and (110) directions by changing the RTiO3. Using first-principles density functional theory calculations, we find that the SrIrO3 owns a large single-ion anisotropy due to its strong spin–orbit interaction. This anisotropy can be reversibly controlled by the OOC and then reorient the easy-axis of the superlattices. Additionally, it enlarges the MAE of the films via the cooperation with a robust orbital hybridization between the Ir and Mn atoms. Our results indicate that the tricolor superlattices consisting of 3d and 5d oxides provide a powerful platform to study the MA and develop oxide-based spintronic devices.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00658.(1) Fabrication and magnetic anisotropy (MA) of LSMO and [2SIO,2LSMO]10 superlattice films; (2) structure and MA of [SIO,STO,SIO,2LSMO]10 (SL-S) and [SIO,2STO,SIO,2LSMO]10 (SL-2S) superlattice films; (3) in-plane magnetic anisotropy of the LSMO and superlattice films characterized by the measurements of temperature-dependent magnetization and anisotropic magnetoresistance; (4) in-plane structural transition of the SIO modulated by STO and CTO; (5) magnetic ground states for the distorted and undistorted 3LSMO/3SIO supercells; (6) calculation details of the MAE of the distorted and undistorted 3LSMO/3SIO supercells; (7) layer- and element-projected MAE and charge distribution at interface calculations in the distorted and undistorted 3LSMO/3SIO supercells (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic