Tilted Magnetic Anisotropy with In‐Plane Broken Symmetry in Ru‐Substituted Manganite Films

Brajagopal Das,Lena Wysocki,Jörg Schöpf,Lin Yang,Amir Capua,Paul H.M. Loosdrecht,Lior Kornblum
DOI: https://doi.org/10.1002/aelm.202300253
IF: 6.2
2023-09-06
Advanced Electronic Materials
Abstract:This study illustrates the coexistence of anisotropic in‐plane magnetization and strong perpendicular magnetization in an emerging manganite material with a Curie temperature near room temperature; the combination of these features is promising for cutting edge spintronics and magnetic memories. The anisotropy is traced to an interplay between broken crystal symmetry, spin‐orbit coupling, and magnetic exchange interactions, driven by a complex microstructure. Controlling the magnetic anisotropy of materials is important in a variety of applications including magnetic memories, spintronic sensors, and skyrmion‐based devices. Ru‐substituted La0.7Sr0.3MnO3 (Ru‐LSMO) is an emerging material, showing tilted magnetic anisotropy (TMA) and possible nontrivial magnetic topologies. Here anisotropic in‐plane magnetization is reported in moderately compressed Ru‐LSMO films, coexisting with TMA. This combination is attractive for technological applications, such as spin‐orbit torque (SOT) based devices and other spintronic applications. A microstructural analysis of films of this material is presented, and Ru single ion anisotropy and strain‐induced structural mechanisms are found to be responsible for both the in‐plane anisotropy and the TMA. The manifestation of these properties in a correlated oxide with Curie temperature near room temperature highlights an attractive platform for technological realization of SOT and other spintronic devices. Illustrating the mechanisms behind these properties provides the necessary engineering space for harnessing these phenomena for practical devices.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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