Abstract:Spintronic devices utilize the spin property of electrons for the storage, transmission, and processing of information, inherently possessing advantages such as low power consumption and non-volatility, thus attracting widespread attention from both academia and industry. Spin-orbit torque(SOT) is an efficient method of manipulating magnetic moments using electric current for writing, harnessing the spin-orbit coupling (SOC) effect within materials to achieve the mutual conversion between charge current and spin current. Enhancing the efficiency of charge-spin conversion is a critical issue in the field of spintronics. Strontium ruthenate (SRO) in transition metal oxides(TMO) has attracted significant attention as a spin source material in SOT devices due to its large and tunable charge-to-spin conversion efficiency. However, current research on SOT control in SRO primarily focuses on utilizing substrate strain, with limited exploration of other control methods. Crystal orientation can produce various novel physical properties by affecting material symmetry and electronic structure, is one of the important means to control the properties of TMO materials. Given the close correlation between the SOT effect and electronic structure as well as surface states, crystal orientation is expected to affect SOT properties by adjusting the electronic band structure of TMO. This work investigates the effect of crystal orientation on the SOT performance of SrRuO 3 films and develops a novel approach for SOT control. (111)-oriented SRO/CoPt heterostructures and SOT devices were prepared using pulse laser deposition, magnetron sputtering, and micro-nano processing techniques. Through harmonic Hall voltage(HHV) measurements, we found that the SOT efficiency reached 0.39, and the spin Hall conductivity reached 2.19×10 5 ħ /2e Ω −1 m −1 , which were 86% and 369% higher than those of the (001) orientation, respectively. Furthermore, current-driven perpendicular magnetization switching was achieved in SrRuO 3 (111) devices at a low critical current density of 2.4×10 10 A/m 2 , which was 37% lower than that of the (001) orientation. These results demonstrate that crystal orientation is an effective approach to significantly enhance the comprehensive performance of SrRuO 3 -based SOT devices, providing new insights for developing high-efficiency spintronic devices.

Oxygen Vacancy Engineering for Highly Tunable Ferromagnetic Properties: A Case of SrRuO 3 Ultrathin Film with a SrTiO 3 Capping Layer

Tuning magnetic anisotropy in SrRuO3 thin film by Ru vacancies induced phase transition

Strain-tunable Magnetism at Oxide Domain Walls

Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces

Tunable magnetic anisotropy in SrMnO3/SrRuO3 bilayers studied by angle and temperature dependence of magneto-transport

Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces.

Dimensional Control of Octahedral Tilt in SrRuO 3 via Infinite-Layered Oxides

Oxygen Vacancy Dependence of Magnetic Behavior in the LaAlO3/SrTiO3 Heterostructures

Electric-Field Control of Oxygen Vacancies and Magnetic Phase Transition in a Cobaltite/Manganite Bilayer

Electric-field control of reversible electronic and magnetic transitions in two-dimensional oxide monolayer magnets

Controllable Oxygen Vacancies, Orbital Occupancy and Magnetic Ordering in SrCoO3−δ Films

Enhancement of Spin–Orbit Torque by Strain Engineering in SrRuO 3 Films

Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction

Tunable Magnetic Properties in SrRuO3/BiFeO3 Heterostructures Via Electric Field

Switching Magnetic Anisotropy of SrRuO3 by Capping-Layer-Induced Octahedral Distortion

Enhancement of Spin–Orbit Torque by Strain Engineering in SrRuO3 Films

The Origin of Oxygen Vacancies Controlling La2/3sr1/3mno3 Electronic and Magnetic Properties

Interfacial Control of Ferromagnetism in Ultrathin SrRuO3 Films Sandwiched Between Ferroelectric BaTiO3 Layers.

3D oxygen vacancy distribution and defect-property relations in an oxide heterostructure

Crystal Orientation Regulation of Spin-Orbit Torque Efficiency and Magnetization Switching in SrRuO 3 Thin Films