Abstract:Spintronic devices utilize the spin property of electrons for the storage, transmission, and processing of information, inherently possessing advantages such as low power consumption and non-volatility, thus attracting widespread attention from both academia and industry. Spin-orbit torque(SOT) is an efficient method of manipulating magnetic moments using electric current for writing, harnessing the spin-orbit coupling (SOC) effect within materials to achieve the mutual conversion between charge current and spin current. Enhancing the efficiency of charge-spin conversion is a critical issue in the field of spintronics. Strontium ruthenate (SRO) in transition metal oxides(TMO) has attracted significant attention as a spin source material in SOT devices due to its large and tunable charge-to-spin conversion efficiency. However, current research on SOT control in SRO primarily focuses on utilizing substrate strain, with limited exploration of other control methods. Crystal orientation can produce various novel physical properties by affecting material symmetry and electronic structure, is one of the important means to control the properties of TMO materials. Given the close correlation between the SOT effect and electronic structure as well as surface states, crystal orientation is expected to affect SOT properties by adjusting the electronic band structure of TMO. This work investigates the effect of crystal orientation on the SOT performance of SrRuO 3 films and develops a novel approach for SOT control. (111)-oriented SRO/CoPt heterostructures and SOT devices were prepared using pulse laser deposition, magnetron sputtering, and micro-nano processing techniques. Through harmonic Hall voltage(HHV) measurements, we found that the SOT efficiency reached 0.39, and the spin Hall conductivity reached 2.19×10 5 ħ /2e Ω −1 m −1 , which were 86% and 369% higher than those of the (001) orientation, respectively. Furthermore, current-driven perpendicular magnetization switching was achieved in SrRuO 3 (111) devices at a low critical current density of 2.4×10 10 A/m 2 , which was 37% lower than that of the (001) orientation. These results demonstrate that crystal orientation is an effective approach to significantly enhance the comprehensive performance of SrRuO 3 -based SOT devices, providing new insights for developing high-efficiency spintronic devices.

Enhancement of Spin–Orbit Torque by Strain Engineering in SrRuO3 Films

Enhancement of Spin–Orbit Torque by Strain Engineering in SrRuO 3 Films

Tetrahedral Coordination and Low-Spin Configuration in a 5d Oxide

Modulation of Spin–Orbit Torque from SrRuO3 by Epitaxial‐Strain‐Induced Octahedral Rotation

Highly Energy-Efficient Spin Current Generation in SrIrO3 by Manipulating the Octahedral Rotation

Crystal Orientation Regulation of Spin-Orbit Torque Efficiency and Magnetization Switching in SrRuO 3 Thin Films

Anisotropic Spin-Orbit Torque Generation in Epitaxial SrIrO3 by Symmetry Design

Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching

Infinite-layer/perovskite Oxide Heterostructure-Induced High-Spin States in SrCuO2/SrRuO3 Bilayer Films.

Strain-Mediated Spin–Orbit Torque Enhancement in Pt/Co on Flexible Substrate

Tuning Stoichiometry for Enhanced Spin‐Charge Interconversion in Transition Metal Oxides

Dimensional Control of Octahedral Tilt in SrRuO 3 via Infinite-Layered Oxides

Spin-Glass-Like Behavior and Topological Hall Effect in SrRuO3/SrIrO3 Superlattices for Oxide Spintronics Applications

Electric field induced reversal of spin polarization, magnetic anisotropy and tailored Dzyaloshinskii-Moriya interaction in underoxidized SrRuO<sub>3</sub>/SrTiO<sub>3</sub> heterostructures

Enhancement of Out-of-Plane Spin-Orbit Torque by Interfacial Modification

Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction

Tunable magnetic anisotropy in SrMnO3/SrRuO3 bilayers studied by angle and temperature dependence of magneto-transport

Dimensional Control of Octahedral Tilt in SrRuO3 Via Infinite-layered Oxides

Single-layer spin-orbit-torque magnetization switching due to spin Berry curvature generated by minute spontaneous atomic displacement in a Weyl oxide

High Spin Hall Conductivity Induced by Ferromagnet and Interface

Strong Ferromagnetic Manipulation of SrTiO3 from CO2 -Straining Effect on Electronic Structure Modulation.