Abstract:The rapid development of the next-generation high-speed wireless communication system has set increasingly stringent requirements on the spectral purity of local RF oscillators. Low phase noise is crucial to support advanced modulation scheme enabling high data-rates wireless link [1]. A viable popular approach is to coupled N identical oscillators together to improve the phase noise by 10log <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</inf> N at the cost of N times higher power [2]–[6]. Nevertheless, the coupling network needs to be designed carefully to avoid undesired multi-tone concurrent oscillations. Besides, area occupation is another issue of multi-core VCOs. The star-geometry as shown in Fig. 1. (bottom left), which is simple N times duplication of single core, occupies N times larger area so comes with an area penalty [3]–[5]. To solve this problem, circular geometry is proposed where the passives are merged into a single passive structure and the minimal realizable inductance is reduced while keeping a high Q factor [6]–[7]. In order to further reduce the silicon area, a square-geometry quad-core oscillator with inductor sharing technique is proposed in this paper and it exhibits a compact area of 0.09 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is the smallest quad-core VCO operating at a similar oscillation frequency. The unwanted mode is suppressed by the metal trace that connects the drain node of adjacent cores. Thanks to the proposed square-geometry and inductor sharing technique, the proposed quad-core class-F VCO can further reduce the area occupation. The proposed VCO is fabricated in 65nm CMOS technology. The measured phase noise is -137.2 dB/Hz at 10 MHz offset frequency from a carrier of 19 GHz, which translates to the FoM of 186.1 dBc/Hz.

A Low Noise VCO with Common-Tail Inductor in 180nm CMOS Technology

A Low Phase Noise VCO with Placement Reordered Cores and High-Q Bond Wire Array Inductors

An Inverted Complementary Cross-Coupled VCO to Reduce Phase Noise Sensitivity to KVCO

An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

A 3 GHz Low Power LC VCO with Voltage Boosted Circuit from 0.5 V Supply

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

An Enhanced Class-F Dual-Core VCO With Common-Mode-Noise Self-Cancellation and Isolation Technique

A Low Phase-Noise LC Voltage Controlled Oscillator in CMOS Technology

A 12.5-to-15.4ghz, -118.9Dbc/hz PN at 1mhz Offset, and 191.0dbc/hz FoM VCO with Common-Mode Resonance Expansion and Simultaneous Differential 2Nd-Harmonic Output Using a Single Three-Coil Transformer in 65nm CMOS.

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

A Low Power CMOS VCO Using Inductive-Biasing with High Performance FoM

A 2.7-Mw 1.36–1.86-Ghz LC-VCO with a FOM of 202 Dbc/hz Enabled by a 26%-Size-reduced Nano-Particle-Magnetic-Enhanced Inductor

A FoM of −191 Db, 4.4-Ghz LC-VCO Integrating an 8-Shaped Inductor with an Orthogonal-Coupled Tail-Filtering Inductor

A Low Noise Self-Mixing-VCO Based on Coupled Class-F 2 Oscillators

A Low Noise Self-Mixing-VCO Based on Coupled Class-F<sub>2</sub> Oscillators

A Complementary Oscillator Using a Current-Limiting Tail Resistor in 180nm CMOS

A Class-C Eight-Phase Voltage-Controlled Oscillator With 184.2 dBc/Hz FoM and Loop-Based Superharmonic Coupling in 65nm CMOS

A 418 GHz CMOS Fully Integrated LC Balanced Oscillator with Symmetrical Noise Filter Technique and Large Tuning Range

A 4.89-Ghz Low-Phase-noise VCO in CMOS Technology

A 1.0 V Differential VCO in 0.13 Μm CMOS Technology

A 4.2-5 GHz, Low Phase Noise LC-VCO with Constant Bandwidth and Small Tuning Gain