Abstract:The electronic defect structure of CuGaS2, a wide bandgap material, presents an opportunity for enhanced understanding of defects in Cu(In,Ga)S2 solar cells. Our findings indicate that the optical transition of CuGaS2 is impacted by the presence of a shallow donor level, as well as two shallow acceptor levels and an additional deeper acceptor level. However, it is the deep defect transitions that originate from two broad mid‐gap defect levels that are detrimental to the performance of CuGaS2 solar cells. CuGaS2 films grown by physical vapor deposition were studied by photoluminescence (PL) spectroscopy, using excitation intensity and temperature‐dependent analyses. We observed free and bound exciton recombinations, three donor‐to‐acceptor (DA) transitions, and deep‐level transitions. The DA transitions at ~2.41, 2.398, and ~2.29 eV are attributed to a common donor level ~35 meV and two shallow acceptors at ~75 and ~90 meV and a deeper acceptor at 210 meV above the valence band. This electronic structure is similar to those of other chalcopyrite materials. The observed DA transitions are accompanied by several phonon replicas. The Cu‐rich and near‐stoichiometric CuGaS2 films are dominated by transitions involving the acceptor at 210 meV. All films show deep‐level transitions at ~2.15 and 1.85 eV due to broad deep defect bands. The slightly Cu‐deficient films were dominated by intense transitions at ~2.45 eV, which were attributed to excitonic transitions, and a broad defect transition at 2.15 eV.

Optical Characterization of Bandedge Electronic Structure and Defect States in Cu2ZnSnS4

Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression Through Sn-Poor Composition

Mapping the Energetics of Defect States in Cu2ZnSnS4 films and the Impact of Sb Doping

Defects Energetics, Electronic Structure and Optical Properties of Cu-Doping and Zn Vacancy Impurities in ZnSe

Unveiling the Atomic Defects and Electronic Structure of Cu2.2Zn0.8SnSe4-xTex (x = 0 to 0.04) by X-ray Absorption Fine Structure Spectroscopy.

The Suppression of Cu-related Charge Localized Defects in Cu2ZnSnS4 Thin Film Solar Cells

Defect-assisted nonradiative recombination in Cu 2 ZnSn Se 4 : A comparative study with Cu 2 ZnSn S 4

Composition dependence of electronic defects in CuGaS2

Electronic, Optical, and Mechanical Properties of Cu 2 ZnSnS 4 with Four Crystal Structures

Mechanism of Effect of Intrinsic Defects on Electrical and Optical Properties of Cu2CdSnS4: an Experimental and First-Principles Study

Defect-assisted Nonradiative Recombination in Cu2ZnSnSe4 : A Comparative Study with Cu2ZnSnS

Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn2S4 semiconductor for below-bandgap photodetection

The role of Sb in solar cell material Cu2ZnSnS4

Numerical Study of the Electronic Structure, Elastic and Optical Properties of Defect Quaternary Semiconductor CuGaSnSe4

Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductorcu2znsns4

Defect emission and its dipole orientation in layered ternary Znln2S4 semiconductor

Defect energy levels and persistent luminescence in Cu-doped ZnS

Single-step Preparation and Characterization of Cu2ZnSn(SxSe1−x)4 Thin Films Deposited by Pulsed Laser Deposition Method

Comparative Study of the Structural and Optical Properties of Cu2snx3 and Cu2znsnx4 (X = S, Se) Thin Films and Optoelectronic Devices