Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials Via Ga3+‐Doping for over 12% Efficient Solar Cells
Yachao Du,Shanshan Wang,Qingwen Tian,Yuechao Zhao,Xiaohuan Chang,Haiqin Xiao,Yueqing Deng,Shiyou Chen,Sixin Wu,Shengzhong (Frank) Liu
DOI: https://doi.org/10.1002/adfm.202010325
IF: 19
2021-01-01
Advanced Functional Materials
Abstract:The efficiency of earth-abundant Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells is considerably lower than the Shockley-Queisser limit. One of the main reasons for this is the presence of deleterious cation disordering caused by Sn-Zn antisite and 2Cu(Zn)+Sn-Zn defect clusters, resulting in a short minority carrier lifetime and significant band tailing, leading to a large open-circuit voltage deficit, and hence, low efficiency. In this study, Ga-doping is used to increase the CZTSSe solar cell efficiency to as high as 12.3%, one of the highest for this type of cells. First-principles calculations show that the preference of Ga3+ occupying Zn and Sn sites has a benign effect on suppressing the formation of the Sn-Zn deep donor defects by upwardly shifting the Fermi level, which is further confirmed by deep-level transient spectroscopy characterization. Besides, the Ga dopants can also form defect-dopant clusters, such as Ga-Zn+Cu-Zn and Ga-Zn+Ga-Sn, which also have positive effects on suppressing the band-tailing states. The defect engineering via Ga3+-doping may suppress the band-tailing defect with a decreased Urbach energy, elevate the minority carrier lifetime, and in the end, enhance the V-OC from 473 to 515 mV. These results provide a new route to further increase CZTSSe-based solar cell efficiency by defect engineering.