Carbon nanotubes for thin film transistor

WuYucui,LinXinnan,ZhangMin

IF: 3.791

2013-01-01

Journal of Nanomaterials

Abstract:We review the present status of single-walled carbon nanotubes (SWCNTs) for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotub...

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Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

Yucui Wu,Xinnan Lin,Min Zhang

DOI: https://doi.org/10.1155/2013/627215

IF: 3.791

2013-01-01

Journal of Nanomaterials

Abstract:We review the present status of single-walled carbon nanotubes (SWCNTs) for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs). The most popular SWCNT growth method is chemical vapor deposition (CVD), including plasma-enhanced chemical vapor deposition (PECVD), floating catalyst chemical vapor deposition (FCCVD), and thermal CVD. Carbon nanotubes (CNTs) used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation. The technologies of applying CNT random networks to work as the channels of SWCNT-TFTs are also reviewed. Excellent work from global researchers has been benchmarked and analyzed. The unique properties of SWCNT-TFTs have been reviewed. Besides, the promising applications of SWCNT-TFTs have been explored. Finally, the key issues to be solved in future have been summarized.
Transferable thin films of pristine carbon nanotubes.

Himadri Shekhar Mandal,Andrew Ward,Xiaowu Tang

DOI: https://doi.org/10.1166/jnn.2011.3729

2011-01-01

Journal of Nanoscience and Nanotechnology

Abstract:We describe here a simple and low-cost method to prepare ultra-thin, homogeneous, and transferable films of pristine carbon nanotubes (CNTs). The highly efficient chemical vapor deposition (CVD) growth method involves silica supported catalysts and alcohol vapor as gaseous carbon source. By varying the amount of catalysts, the thickness of synthesized films can be easily tuned from 20 nm (sub-monolayer) to 150 nm in a controlled fashion. High-resolution transmission electron microscopy (HRTEM) revealed that the films are composed primarily of single-walled and a small fraction of double-walled CNTs. A nonlinear relationship between film conductivity and thickness was observed. Our sub-monolayer (similar to 20 nm) film, which is noticeably thinner than conductive CNT films synthesized using other methods (typically > 50 nm and up to similar to 100 mu m), shows the highest conductivity of 400 mho . cm(-1) with similar to 90% transparency in the visible range and close to 100% transparency in the infrared range. This ultra-thin film can also be transferred carrier-film free to a wide range of substrates including low-cost plastics for flexible electronics. Compared to CNT films prepared by filtration techniques, our films demonstrated superior stability against mechanical bending.
Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics

Jia Si,Lin Xu,Maguang Zhu,Zhiyong Zhang,Lian-Mao Peng

DOI: https://doi.org/10.1002/aelm.201900122

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:The device standards necessary for high-performance carbon nanotube (CNT) field-effect transistors (FETs) for integrated circuits (ICs) are discussed by illustrating key device metrics. Recent advances in solution-processed CNT network-materials are introduced and some important progress made in CNT-network film-based transistors and ICs is explored. The status of aligned CNT thin-film materials and representative work in high-performance electronics is discussed. Finally, the major challenges to the further development of high-performance CNT thin-film electronics and the prospects in this exciting field are summarized.
A novel thin-film transistor using carbon nanotubes as both channel and electrodes

He Peijian,Deng Yanyan,Chen Chun,Zhang Min

DOI: https://doi.org/10.1109/EDSSC.2016.7785199

2016-01-01

Abstract:A novel structure of carbon nanotube thin-film transistors (CNT-TFTs) with carbon nanotubes as source and drain electrodes has been proposed and realized. Single-walled carbon nanotubes (SWNTs) with 95% semiconducting purity work as the channel layer while semiconducting-metallic-mixed SWNTs with 33% semiconducting purity work as the source and drain electrodes. Transconductance of 5.52×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> S and on/off current ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> have been obtained for the devices. The electrical performance is comparable to that of the CNT-TFTs with Titanium electrodes. By using CNTs as the electrode, the CNT-TFTs are closer to future flexible and transparent applications by one more step. Besides, the fabrication process of the devices is facile and low-cost.
Research Progress in Carbon Nanotube Thin Film Transistors by Printing Technologies

Suyun Wang,Nianjie Zhang,Shengzhen Liu,Lijuan Liang,Zhaohui Yu,Lianfang Li,Beiqing Huang,Xianfu Wei,Jianwen Zhao

DOI: https://doi.org/10.1007/978-981-19-9024-3_18

2023-01-01

Abstract:In recent years, electronic products have continued to develop rapidly toward the trend of thinness, personalization, flexibility, high performance, high density, and multi-functional integration, and the development and research of new semiconductor materials and field-effect transistors (FETs) have become a hot topic of research today. With its excellent electrical, mechanical, and chemical properties, carbon nanotubes can be combined with printed electronics to become one of the most ideal channel materials for next-generation chips and flexible electronics. This paper outlines the separation methods of semiconductor carbon nanotubes and the research progress of printed carbon nanotube thin-film transistors in the fields of Internet of Things, artificial intelligence, and wearable electronics, and summarizes the challenges and opportunities for printed carbon nanotube thin-film transistor devices.
Fabrication and Electrical Properties of Printed Carbon Nanotube Thin Film Transistors (TFTs) Based on Self-made Carbon Nanotubes

Tingting LIU,Tianxiang ZHU,Lin SHAO,Xinluo ZHAO,Jianwen ZHAO,Zheng CUI

DOI: https://doi.org/10.7517/j.issn.1674-0475.2018.03.005

2018-01-01

Abstract:In this work,we demonstrated that arc discharge carbon nanotubes produced by our lab could be acted as the channel materials after sorted by polymers.It was found that PFO-BT,PFIID,PCZ and PCZIID showed the ability to selectively separate sc-SWCNTs from pristine arc discharge carbon nanotubes produced by our lab.Among them,PCZ and PCZIID with the higher molecular weight and larger conjugated units showed higher efficiency to separate sc-SWCNTs.As-prepared sc-SWCNT inks could be used to directly construct thin film transistors by inkjet printer,and printed SWCNT TFTs showed good electrical properties with on/off ratio of 8 × 105 and effective mobility of 6.8 cm2 · V 1 · s-1.
High-Performance Carbon Nanotube Thin-Film Transistor Technology

Lian-Mao Peng

DOI: https://doi.org/10.1021/acsnano.3c05753

IF: 17.1

2023-11-28

ACS Nano

Abstract:Semiconducting single-walled carbon nanotubes (CNTs) have ideal electronic, chemical, and mechanical properties and are ideal channel materials for constructing transistors in the post-Moore era. Experiments have shown that CNT-based planar CMOS transistors can be scaled down to sub-10 nm technology nodes, demonstrating excellent performance far exceeding the silicon limit. At the same time, CNT electronic technology is essentially a thin-film transistor technology, which enables the construction of chips on such substrates as glass and polymers with an area of several meters, providing technical support for large-area and flexible electronic applications. In addition, since CNT electronics technology involves only low-temperature processes (less than 400 °C), the monolithic 3D integration of logic and memory devices can be realized which can greatly improve the comprehensive performance of the chip and lead to a thousand-fold performance increase for special data structures, especially in AI applications.
Nanotube and Nanowire Transistors

G. A. J. Amaratunga,A. S. Teh,S. N. Cha,G. W. Ho,J. E. Jang,Y. Yang,Y. Choi,K. B. K. Teo,S. H. Dalal,D. J. Kang,N. L. Rupesinghe,W. I. Milne,D. Hasko,M. E. Welland,J. M. Kim

DOI: https://doi.org/10.1109/smicnd.2005.1558700

2005-01-01

Abstract:In this paper we report the use of in-situ grown single wall carbon nanotubes (SWCNTs) from pre-patterned catalyst islands to construct nanotube electronics. The SWCNTs were grown via thermal chemical vapour deposition (CVD) on catalysts islands which were prepared by sputtering, initially, alignment marks are patterned simultaneously with the catalysts islands to enable accurate overlay of contact patterns during the top down fabrication approach for SWCNT devices. The gate transfer characteristics of p-channel SWCNTs are presented. The use of pre-patterned catalyst islands allows control of the SWCNT location required for integrated circuits. Characteristics of ZnO nanowire transistors are also introduced. Very high mobilities are measured in n-channel devices in which the gate is defined in a self aligned manner to have a nanoscale air-gap insulator. The characteristics of the ZnO transistor are comparable to those of achieved from SWCNTs. This raises the possibility of using SWCNTs for p-channel and ZnO nanowires for n-channel in complimentary switching devices.
Transparent All-Carbon-Nanotube Thin-film Transistors

Chunhui Du,Yanyan Deng,Kai Zhu,Yubo Gao,Min Zhang

DOI: https://doi.org/10.1109/nano.2017.8117262

2017-01-01

Abstract:All-carbon-nanotube thin-film transistors (ACNT-TFTs) are proposed and fabricated on a transparent glass substrate by a facile solution-processed method, with 95% enriched semiconducting single-walled carbon nanotubes (SWCNTs) serving as channel materials and mixed SWCNTs as source/drain/gate electrodes. The device demonstrates excellent electronic properties with an on/off current ratio over 105, a threshold voltage of 8 V, a subthreshold swing of 1.13 V/dec, a device mobility of 10 cm(2)/vs, as well as a transparency of 80%. The proposed device is highly promising for the next-generation display application. Additionally, the facile fabrication method and low-temperature process match well with the requirements for manufacturing.
Research Advances in Fabrication Technologies of Transparent Conducting Carbon Nanotube Films

ZHANG Jing,WEN Xiaonan,SONG Qijun,JIN Hehua,LI Hongbo,LI Qingwen

DOI: https://doi.org/10.3969/j.issn.1005-023x.2012.05.028

2011-01-01

Abstract:The properties of CNTs are introduced briefly.According to dry methods and solution methods,the preparation techniques of CNT-TCFs are reviewed in detail.Meanwhile the advantages and shortages of those me-thods are analyzed.At last,the future prospect and challenge of CNT-TCFs are predicted.
Carbon Nanotube Technology For Solid State And Vacuum Electronics

K. B. K. Teo,R. G. Lacerda,M. H. Yang,A. S. Teh,L. A. W. Robinson,S. H. Dalal,N. L. Rupesinghe,M. Chhowalla,S. B. Lee,D. A. Jefferson,D. G. Hasko,G. A. J. Amaratunga,W. L. Milne,P. Legagneux,L. Gangloff,E. Minoux,J. P. Schnell,D. Pribat

DOI: https://doi.org/10.1049/ip-cds:20040408

2004-01-01

IEE Proceedings - Circuits Devices and Systems

Abstract:The authors demonstrate the fabrication of solid state and vacuum electronic devices using carbon nanotubes as the active channel and emitters. Single wall and multiwall carbon nanotubes (CNT) are deposited directly on substrates using chemical vapour deposition (CVD) and plasma enhanced chemical vapour deposition (PECVD), respectively. The fabrication of top gate and side gate field effect transistors is demonstrated using single wall CNTs. Vertically aligned multiwall CNTs are used to fabricate field emitter arrays or micro-gated field emitters, which have potential application in field emission displays, microwave amplifiers or electron guns.
Modeling of thermocapillary flow to purify single-walled carbon nanotubes

jizhou song,chaofeng lu,chenxi zhang,sung hun jin,yuhang li,simon dunham,xu xie,f du,yonggang huang,john a rogers

DOI: https://doi.org/10.1039/c4ra08895f

IF: 4.036

2014-01-01

RSC Advances

Abstract:Single walled carbon nanotubes (SWNTs) are of significant interest in the electronic materials research community due to their excellent electrical properties. The mixture of synthesized SWNTs, however, significantly hampers device performance, particularly for potential applications in digital electronics. Recent purification techniques involve successful and complete removal of metallic SWNTs from horizontal arrays by using thermocapillary flows in thin film resists initiated by selective Joule heating. In this paper, an analytical model, as well as a fully coupled thermo-mechanical-fluid finite element model, is developed to study the physics of thermocapillary flow in this context. A simple scaling law for the film thickness profile is established in terms of the geometry (e.g., film thickness), material (e.g., thermal conductivity and viscosity) and loading parameters (e.g., power density). The results show that the normalized thickness profile only depends on three non-dimensional parameters in addition to the normalized position and normalized time. In particular, for the experimentally investigated system, the thickness profile only depends on a single non-dimensional parameter. These findings may serve as useful design guidelines for process optimization.
Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Sung Hun Jin,Simon N. Dunham,Jizhou Song,Xu Xie,Ji-hun Kim,Chaofeng Lu,Ahmad Islam,Frank Du,Jaeseong Kim,Johnny Felts,Yuhang Li,Feng Xiong,Muhammad A. Wahab,Monisha Menon,Eugene Cho,Kyle L. Grosse,Dong Joon Lee,Ha Uk Chung,Eric Pop,Muhammad A. Alam,William P. King,Yonggang Huang,John A. Rogers

DOI: https://doi.org/10.1038/nnano.2013.56

IF: 38.3

2013-01-01

Nature Nanotechnology

Abstract:Among the remarkable variety of semiconducting nanomaterials that have been discovered over the past two decades, single-walled carbon nanotubes remain uniquely well suited for applications in high-performance electronics, sensors and other technologies. The most advanced opportunities demand the ability to form perfectly aligned, horizontal arrays of purely semiconducting, chemically pristine carbon nanotubes. Here, we present strategies that offer this capability. Nanoscale thermocapillary flows in thin-film organic coatings followed by reactive ion etching serve as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous aligned arrays grown on quartz substrates. The low temperatures and unusual physics associated with this process enable robust, scalable operation, with clear potential for practical use. We carry out detailed experimental and theoretical studies to reveal all of the essential attributes of the underlying thermophysical phenomena. We demonstrate use of the purified arrays in transistors that achieve mobilities exceeding 1,000 cm 2 V −1 s −1 and on/off switching ratios of ∼10,000 with current outputs in the milliamp range. Simple logic gates built using such devices represent the first steps toward integration into more complex circuits.
Carbon Nanotube Thin Film Transistors for Flat Panel Display Application

Xuelei Liang,Jiye Xia,Guodong Dong,Boyuan Tian,lianmao Peng

DOI: https://doi.org/10.1007/s41061-016-0083-6

2016-01-01

Abstract:Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.
Carbon Nanotubes: from Growth, Placement and Assembly Control to 60mv/decade and Sub-60 Mv/decade Tunnel Transistors

Guangyu Zhang,Xinran Wang,Xiaolin Li,Yuerui Lu,Ali Javey,Hongjie Dai

DOI: https://doi.org/10.1109/iedm.2006.346804

2006-01-01

Abstract:This paper presents recent progress on placement and orientation control of single-walled carbon nanotubes (SWNTs) by both CVD and PECVD growth in electric fields and on single crystal quartz substrates, and post-growth Langmuir Bloddget assembly of close-packed SWNTs. We also present fabrication of nanotube field effect-transistors (FETs) including MOSFET like devices with 60mV/decade switching and ambipolar P-I-N band-to-band tunnel (BTBT) transistors with subthreshold swings down to 25mV/decade
Carbon Nanotubes Advance Next-Generation Electronics

Tianchao Niu

DOI: https://doi.org/10.1016/j.nantod.2020.100992

IF: 17.4

2020-01-01

Nano Today

Abstract:Single-walled carbon nanotubes (SWCNTs) are potential candidates for next-generation computing to meet the requirement of device scaling. Here we discuss recent breakthroughs in the CNT-based field-effect transistors (FETs) and highlight key ongoing topics in purification and assembly. A few key challenges that capitalize on the chemical vapor deposition (CVD) of SWCNTs are discussed in which surface science and model systems can enable advances in high-purity synthesis. A full description of the CVD growth and chemical sorting of SWCNTs falls beyond the scope of this opinion, but we focus on the framework of SWCNTs in FETs and draw connections to their requirements for high-quality materials that highlight the underlying mechanisms. (C) 2020 Elsevier Ltd. All rights reserved.
Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

Jianting Gu,Jie Han,Dan Liu,Xiaoqin Yu,Lixing Kang,Song Qiu,Hehua Jin,Hongbo Li,Qingwen Li,Jin Zhang

DOI: https://doi.org/10.1002/smll.201600398

IF: 13.3

2016-01-01

Small

Abstract:For the large-area fabrication of thin-film transistors (TFTs), a new conjugated polymer poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl] is developed to harvest ultrahigh-purity semiconducting single-walled carbon nanotubes. Combined with spectral and nanodevice characterization, the purity is estimated up to 99.9%. High density and uniform network formed by dip-coating process is liable to fabricate high-performance TFTs on a wafer-scale and the as-fabricated TFTs exhibit a high degree of uniformity.
Single-Walled Carbon Nanotube Thin Film with High Semiconducting Purity by Aerosol Etching toward Thin-Film Transistors

Yongping Liao,Zhao Zhang,Qiang Zhang,Nan Wei,Saeed Ahmad,Ying Tian,Esko I. Kauppinen

DOI: https://doi.org/10.1021/acsanm.1c02056

IF: 6.14

2021-09-13

ACS Applied Nano Materials

Abstract:Semiconducting single-walled carbon nanotubes (s-SWCNTs) are highly desirable for thin-film transistors (TFTs). However, controllable and high-yield synthesis of s-SWCNTs remains a challenge. Herein, we develop an aerosol etching strategy to prepare SWCNTs with a high semiconducting ratio. SWCNTs, premade by floating catalyst chemical vapor deposition (FCCVD), are selectively etched by carbon dioxide (CO2) in an aerosol phase. Both absorption and Raman spectra indicate the decrease of metallic SWCNTs (m-SWCNTs), and electron diffraction further identifies that the s-SWCNT ratio has been increased from 67.2 to 81.2% by CO2 etching. This etching is also found to have dominant selectivity on the chiral angle; near-zigzag SWCNTs with chirality are more favored to be removed. In addition, thin films with high-purity semiconducting SWCNTs could be obtained by dry deposition since both the synthesis and etching processes take place in the aerosol phase. Our technique offers a promising option for the high-yield synthesis of s-SWCNTs and implies potential applications in TFTs.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.1c02056.Figures of more EDPs; statistics of (n,m) abundance of SWCNTs from R1 and R2; table of the representative chiralities of metallic tubes and their content; and SEM image and the length distribution of SWCNTs from R1 and R2 (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Fabrication of Thin-Film Transistor Based on Self-Assembled Single-Walled Carbon Nanotube Network

Xiaodong Liu,Changxin Chen,Poonam Sharma,Liying Zhang,Ying Wang,Nantao Hu,Chuanjuan Song,Liangming Wei,Qinran Liu,Yafei Zhang

DOI: https://doi.org/10.1016/j.physe.2015.07.036

IF: 3.369

2015-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Thin-film transistor based on controllable electrostatic self-assembled monolayer single-wall carbon nanotubes (SWNTs) network has been fabricated by varying the density of nanotubes on the silicon substrate. The densities of SWNTs network have been investigated as a function of concentration and assembly time. It has been observed that the density of SWNTs network increases from 0.6µm−2 to 2.1µm−2, as the average on-state current (Ion) increases from 0.5mA to 1.47mA. The device has a current on/off ratio (Ion/Ioff) of 1.3×104 when Ion reaches to 1.34mA.
Controlled Preparation of Single-Walled Carbon Nanotubes as Materials for Electronics

Yuguang Chen,Min Lyu,Zeyao Zhang,Feng Yang,Yan Li

DOI: https://doi.org/10.1021/acscentsci.2c01038

IF: 18.2

2022-11-29

ACS Central Science

Abstract:Single-walled carbon nanotubes (SWCNTs) are of particular interest as channel materials for field-effect transistors due to their unique structure and excellent properties. The controlled preparation of SWCNTs that meet the requirement of semiconducting and chiral purity, high density, and good alignment for high-performance electronics has become a key challenge in this field. In this Outlook, we outline the efforts in the preparation of SWCNTs for electronics from three main aspects,...

chemistry, multidisciplinary

Carbon nanotubes for thin film transistor

Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

Transferable thin films of pristine carbon nanotubes.

Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

Research Progress in Carbon Nanotube Thin Film Transistors by Printing Technologies

Fabrication and Electrical Properties of Printed Carbon Nanotube Thin Film Transistors (TFTs) Based on Self-made Carbon Nanotubes

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Nanotube and Nanowire Transistors

Transparent All-Carbon-Nanotube Thin-film Transistors

Research Advances in Fabrication Technologies of Transparent Conducting Carbon Nanotube Films

Carbon Nanotube Technology For Solid State And Vacuum Electronics

Modeling of thermocapillary flow to purify single-walled carbon nanotubes

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Carbon Nanotube Thin Film Transistors for Flat Panel Display Application

Carbon Nanotubes: from Growth, Placement and Assembly Control to 60mv/decade and Sub-60 Mv/decade Tunnel Transistors

Carbon Nanotubes Advance Next-Generation Electronics

Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

Single-Walled Carbon Nanotube Thin Film with High Semiconducting Purity by Aerosol Etching toward Thin-Film Transistors

Fabrication of Thin-Film Transistor Based on Self-Assembled Single-Walled Carbon Nanotube Network

Controlled Preparation of Single-Walled Carbon Nanotubes as Materials for Electronics