Bending Strain Induced Photocurrent Crossover from Positive to Negative in the Flexible Organic Phototransistors

Huabiao Zhu,Yuhuan Yang,Yingquan Peng,Sunan Xu,Wenli Lv,Yi Wei,Lei Sun,Ying Wang

DOI: https://doi.org/10.1016/j.orgel.2019.105614

IF: 3.868

2020-01-01

Organic Electronics

Abstract:The understanding of bending strain effects on the performances of flexible organic phototransistors (FOPTs) is of great importance. In this manuscript, two kinds of FOPTs-single layer of copper phthalocyanine (CuPc) (SL-FOPTs) and hybrid planar bulk-heterojunction of CuPc/CuPc:PTCDA (HPBHJ-OPTs) with PTCDA denotes 3,4,9,10-perylenete-acarboxylic dianhydride, with polyvinyl alcohol as the gate dielectric but different active layer, were fabricated and their strain dependent performances investigated, respectively. For SL-FOPTs, at a given light intensity, with the bending-strain increasing, the photocurrent increases at first, and then decreases after reaching a maximum. A crossover from positive to negative occurs in this process, and the critical strain at which the crossover occurs increases with the illumination light intensity. Different from the observation in SL-FOPTs, the I-dark similar to strain curves in HPBHJ-FOPTs exhibit obtuse small peaks at low gate voltages of vertical bar V-g vertical bar <= 10V, and minimums at large gate voltages of vertical bar V-g >= 20 V. At large gate voltages with increasing bending strain, the photocurrent of HPBHJ-OPTs decreases and become negative (from positive) at first, with the decreasing rate nearly proportional to the gate voltage, and then increase after reaching a negative minimum. The physical origin of observed photocurrent crossover from positive to negative with increasing bending strain is discussed.