Abstract:Ferroelectric photovoltaic materials with intrinsic spontaneous polarization have attracted great attention because the ferroelectric polarization can promote the directional migration of electrons and holes, and reduce the trend of carrier recombination. Recently, the evidence of ferroelectricity in the typical three-dimensional all-inorganic halide perovskites CsGeX3, with band gaps of 1.6 eV to 2.3 eV has been confirmed. But the spontaneous polarization of ferroelectric perovskite CsGeX3 is ~10 to 20 μc/cm2 which is weaker than that of ABO3 (~26 to 75 μc/cm2). Strain engineering has a significant influence on the ferroelectric polarization of semiconductor materials by controlling the lattice scaling and the internal atomic spacing. Hence, in this work, strain engineering is introduced to enhance the ferroelectric polarization and maintain the photovoltaic properties of ferroelectric perovskite CsGeBr3. In this paper, we studied the ferroelectric polarization and photoelectric properties of ferroelectric perovskite CsGeBr3 under different triaxial compressive strain based on first-principle calculations. The calculated results show that when the applied compressive strain increases from 0% to -4%, the spontaneous polarization of ferroelectric perovskite CsGeBr3 increases from 14.23 μc/cm2 to 51.61 μc/cm2, and the band gap reduces from 2.3631 eV to 1.5310 eV. The effective mass of electrons and holes gradually reduces, exciton binding energies decrease from 48 meV to 5 meV, and the optical absorption coefficient is strongly enhanced from 3×105 cm-1 to 5×105 cm-1 in visible range. Besides, the power conversion efficiency(PCE) of CsGeBr3 is significantly increased from 16.95% to 26.77%. Therefore, the results indicate that the application of compressive strain can increase the ferroelectric polarization and even improve the original photovoltaic performance of ferroelectric perovskite CsGeBr3. Our theoretical calculations can provide useful insights and beneficial guidance into experimental studies of ferroelectric perovskites in photoelectric applications.

Flexophotovoltaic Effect and Above-Band-Gap Photovoltage Induced by Strain Gradients in Halide Perovskites

Flexo-photovoltaic effect and above-bandgap photovoltage in halide perovskites

Strain-induced Improper Ferroelectricity in Ruddlesden-Popper Perovskite Halides

Photoflexoelectric effect in halide perovskites

Strain-Manipulated Photovoltaic and Photoelectric Effects of the MAPbBr 3 Single Crystal

Revealing unusual bandgap shifts with temperature and bandgap renormalization effect in phase-stabilized metal halide perovskites

Theoretical study on photoelectric properties of ferroelectric photovoltaic perovskite CsGeBr3 based on first-principle calculations

Tuning the Band Gap and Polarization of BaSnO3/SrSnO3 Superlattices for Photovoltaic Applications.

Elimination of Charge Recombination Centers in Metal Halide Perovskites by Strain

Revealing unusual bandgap shifts with temperature and bandgap renormalization effect in phase-stabilized metal halide perovskite thin films

Flexoelectric-induced photovoltaic effects and tunable photocurrents in flexible LaFeO3 epitaxial heterostructures

Unified picture for the pressure-controlled band gap in inorganic halide perovskites: Role of strain-phonon and phonon-phonon couplings

Significant Modulation of Ferroelectric Photovoltaic Behavior by a Giant Macroscopic Flexoelectric Effect Induced by Strain‐Relaxed Epitaxy

Structural Stability and Optoelectronic Properties of Tetragonal MAPbI3 under Strain

Revealing Unusual Bandgap Shifts with Temperature and Bandgap Renormalization Effect in Phase‐Stabilized Metal Halide Perovskite Thin Films

Anisotropic In Situ Strain‐Engineered Halide Perovskites for High Mechanical Flexibility

Flexo-photovoltaic effect in MoS 2

Light- and bias-induced structural variations in metal halide perovskites

Facile lattice tensile strain compensation in mixed-cation halide perovskite solar cells

High-Performance Flexible and Self-Powered Perovskite Photodetector Enabled by Interfacial Strain Engineering

Strain-activated light-induced halide segregation in mixed-halide perovskite solids