Abstract:A hybrid patterned sapphire substrate (hybrid-PSS) was prepared using an anodic aluminum oxide etching mask to transfer nanopatterns onto a conventional patterned sapphire substrate with microscale patterns (bare-PSS). The threading dislocation (TD) suppression of light-emitting diodes (LEDs) grown on a hybrid-PSS (HP-LED) exhibits a smaller reverse leakage current compared with that of LEDs grown on a bare-PSS (BP-LED). The strain-free GaN buffer layer and fully strained InGaN active layer were evidenced by cross-sectional Raman spectra and reciprocal space mapping of the X-ray diffraction intensity for both samples. The calculated piezoelectric fields for both samples are close, implying that the quantum-confined Stark effect was not a dominant mechanism influencing the electroluminescence (EL) peak wavelength under a high injection current. The bandgap shrinkage effect of the InGaN well layer was considered to explain the large red-shifted EL peak wavelength under high injection currents. The estimated LED chip temperatures rise from room temperature to 150 °C and 75 °C for BP-LED and HP-LED, respectively, at a 600-mA injection current. This smaller temperature rise of the LED chip is attributed to the increased contact area between the sapphire and the LED structural layer because of the embedded nanopattern. Although the chip generates more heat at high injection currents, the accumulated heat can be removed to outside the chip effectively. The high diffuse reflection (DR) rate of hybrid-PSS increases the escape probability of photons, resulting in an increase in the viewing angle of the LEDs from 130° to 145°. The efficiency droop was reduced from 46% to 35%, effects which can be attributed to the elimination of TDs and strain relaxation by embedded nanopatterns. In addition, the light output power of HP-LED at 360-mA injection currents exhibits a ∼ 22.3% enhancement, demonstrating that hybrid-PSSs are beneficial to apply in high-power LEDs.

Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array

Development of Highly Efficient Ultraviolet LEDs on Hybrid Patterned Sapphire Substrates

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

282-Nm Algan-Based Deep Ultraviolet Light-Emitting Diodes with Improved Performance on Nano-Patterned Sapphire Substrates

Enhanced Light Extraction Efficiency of Ultraviolet Light-Emitting Diode Via Hybrid Patterned Sapphire Substrate

High Quantum Efficiency Gan-Based P-I-N Ultraviolet Photodetectors Prepared on Patterned Sapphire Substrates

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate

Enhanced External Quantum Efficiency of Light Emitting Diodes by Fabricating Two-Dimensional Photonic Crystal Sapphire Substrate with Holographic Technique

Application of patterned sapphire substrate for III-nitride light-emitting diodes.

Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs

Boosted Performance of Ultraviolet Light-Emitting Diodes via Wavy Quantum Wells Grown on Large Misoriented Sapphire Substrate

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

[Optical Characteristics of InGaN/GaN Light Emitting Diodes on Patterned Sapphire Substrate].

Single Peak Deep Ultraviolet Emission and High Internal Quantum Efficiency in AlGaN Quantum Wells Grown on Large Miscut Sapphire Substrates

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient Gan-Based Leds

Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Enhanced Performance of Ingan/Gan Multiple Quantum Well Solar Cells with Patterned Sapphire Substrate