Abstract:Organic-inorganic hybrid perovskites have been a focus in the photovoltaic research field due to their remarkable advantages such as tunable direct bandgap, low exciton binding energy, high light harvesting, and so on. The power conversion efficiency (PCE) of lead (Pb)-based perovskite solar cells (PSCs) has been rapidly raised from 3.8% to 25.5% over the decades. With the advantages of a simple preparation process and low production cost, PSCs have great potential in commercialization However, the toxicity of lead in traditional PSCs limits their large-scale production Among all lead-free perovskites, the tin-based one inherits the majority of the excellent photoelectric properties of lead-based perovskites. However, the maximum PCE of tin-based PSCs has only exceeded 13%. Although the electronic structure of Sn2+ is similar to that of Pb2+, it is easy to be oxidized to Sn4', and the formation energy of Sn vacancy defects is low, resulting in heavy p-doping in tin-based perovskite films. The background carrier concentrations of tin-based perovskites are as high as 1018-1020 cm(-3), which makes photo-generated carriers easy to be recombined. Tin-based perovskites usually experience single-molecule recombination, accompanied by a small amount of bi-molecular recombination, and Auger recombination is negligible. Therefore, reducing recombination in tin-based perovskites is to suppress the single-molecule recombination. At present, additive engineering and component modification strategies are mainly adopted to inhibit carrier recombination in tin-based PSCs. Additive engineering includes tin compensating additives. reducing additives and some other additives which interact with perovskites. Theories and experiments show that adding tin compensating additives in precursor solution can effectively improve the chemical potential of Sn and increase the formation energy of tin vacancies. Although the work mechanism of stannous halide as an additive is not fully understood, it has become an indispensable part to prepare high performance tin-based PSCs. The introduction of reducing additives in the precursor can effectively reduce Sn4+ and inhibit the oxidation of Sn2+, thereby inhibiting the generation of tin vacancies, optimizing the morphology of the film, and improving the efficiency and stability of the device. In addition, some additives which interact with perovskite through coordination bonds, ionic bonds and hydrogen bonds can optimize the nucleation rate of tin-based perovskites and passivate the unsaturated coordination of Sir+ at the grain boundaries. The composition modification of tin-based perovskites mainly includes A-site and X-site substitutions. Since the band structure of tin-based perovskites is mainly determined by Sn and X ions, A-site cation substitution only fine-tunes the bandgap of the perovskite. However. A-site cation substitution can tune the tolerance factor of perovskite, thereby improving the efficiency and stability of perovskite. As the alkyl chain of the A-site cation gradually increases, low-dimensional perovskites will be formed. The low-dimensional perovskite can inhibit the self-doping and ion migration, improve the efficiency and stability of the PSCs. It is worth noting that the current efficient tin-based PSCs are mainly focused on low-dimensional perovskites. In addition, since the np(2) electrons of halogens directly participate in the construction of the electronic structure. the bandgap of tin-based perovskites can be directly changed by adjusting the X-site anions. Compared with lead-based perovskites, tin-based ones have more suitable bandgap and higher theoretical efficiency. At the same time, the low toxicity of tin-based perovskites is also conducive to their large-scale industrial production. It is believed that with the in-depth research, tin-based perovskite will surely exert its full potential in the photovoltaic field.

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Sn(II)-containing phosphates as optoelectronic materials

First-principles calculations of phosphorus-doped SnO2 transparent conducting oxide: Structural, electronic, and electrical properties

Prediction of ternary alkaline-earth metal Sn(II) and Pb(II) chlorides with potential applications as p -type transparent conductors

Understanding the role of Niobium, Molybdenum and Tungsten in realizing of the transparent n-type SnO2

Insights on the electronic structure of Tin (II) pyrochlore oxides with 5s2 lone pair states as transparent p-type oxide semiconductors

Vacancies and dopants in two-dimensional tin monoxide: An ab initio study

Computational Prediction of an Antimony-based n-type Transparent Conducting Oxide: F-doped Sb2O5

Screening criteria for high-performance p-type transparent conducting materials and their applications

Designing transparent conductors using forbidden optical transitions

Prediction of Novel P‐type Transparent Conductors in Layered Double Perovskites: A First‐Principles Study

Ab Initio Design of Pb 2+ -based Ternary Oxides for Phase Stable and Hole Dopable p -type Oxides

Computationally-driven, high throughput identification of CaTe and Li$_\textrm{3}$Sb as promising candidates for high mobility $p$-type transparent conducting materials

Native defects and $p$-type dopability in transparent $β$-TeO$_2$: A first-principles study

Design of ternary alkaline-earth metal Sn(II) oxides with potential good p-type conductivity

Advances on Tin-Based Perovskite Solar Cells

Sodium-ion diffusion coefficients in tin phosphide determined with advanced electrochemical techniques

Defect Compensation and Lattice Stabilization Enables High Voltage Output in Tin Halide Perovskite Solar Cells

Design of N-Type Transparent Conducting Oxides: the Case of Transition Metal Doping in In2O3

Designing Effective Hole Transport Layers in Tin Perovskite Solar Cells

Organic Surface Doping for High‐Performance Perovskite Transistors