Abstract:Developing transparent p-type oxide semiconductor has been the long-standing subject of interest for optoelectronic devices, but hindered by the strongly localized valence band (VB) structure intrinsic to metal oxides. Sn2+ oxides represented by SnO are proposed as promising p-type semiconductors since the Sn 5s2 state could help to alleviate the carrier localization at the VB. In this work, using a combination of X-ray spectroscopies and density functional theory calculations, we explore the electronic structures of Sn2+ based Sn2Nb2O7 and Sn2Ta2O7 pyrochlores as wide bandgap p-type oxide semiconductors. Our results show that Sn2Nb2O7 and Sn2Ta2O7 have large optical bandgaps of 2.8 eV and 3.4 eV respectively, and better chemical stability over SnO. Both the experiment and theoretical calculations verified the presence of Sn 5s2 states at the top of VB of Sn2Nb2O7 and Sn2Ta2O7, and the Sn 5s2 states increase the VB dispersion and result in lower hole effective masses of 2.09 me and 2.23 me for Sn2Nb2O7 and Sn2Ta2O7 respectively but work less effectively than that for SnO. The different VB features originate from the varied Sn-O interactions influenced by crystal structures. The lattice distortions in SnO allow the hybridization between Sn 5p orbitals with occupied (Sn 5s-O 2p)* states, forming asymmetrically distributed electronic states with enhanced dispersions. However, in Sn2Nb2O7 and Sn2Ta2O7, these interactions are forbidden by their cubic symmetry and lead to the less dispersive electronic states. Increasing lattices distortions in Sn2Nb2O7 and Sn2Ta2O7 would be necessary to achieve higher hole mobilities. Our findings elucidate the microscopic origins of the opto-electronic properties in Tin (II) pyrochlore oxides, highlighting the significant role of synergistic valence band modulation and crystal structural design in advancing high performance p-type oxide semiconductors.

First-principles calculations of phosphorus-doped SnO2 transparent conducting oxide: Structural, electronic, and electrical properties

First-principles Study of Nitrogen Doping and Oxygen Vacancy in Cubic PbTiO3

Insights on the electronic structure of Tin (II) pyrochlore oxides with 5s2 lone pair states as transparent p-type oxide semiconductors

A Comprehensive First-Principles Investigation of SnTiO3 Perovskite for Optoelectronic and Thermoelectric Applications

Structural, Optical, Electrical, and Nanomechanical Properties of F-Doped Sno2 Fabricated by Ultrasonic Spray Pyrolysis

First-Principles Investigations on Electronic Properties of Rutile TiO2:F and SnO2:F

Sn(II)-containing phosphates as optoelectronic materials

Electronic structure and optical properties of SnO2:F from PBE0 hybrid functional calculations

Electronic and optical properties of W-doped SnO2 from first-principles calculations

First Principle Study on the Electronic Structure of Fluorine-Doped SnO2

Study of electronic structure and optical properties of Sn0.9375TM0.0625O2 (TM=Mo, Ru, Rh, Pd, Ag) based on the first-principles

Designing Optically Transparent and Electrically Conducting BaSnO3 and SrSnO3 Perovskite Oxide Compounds Using First-Principles Calculations

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

First principles study on electronic structures and properties of Sn-doped rutile TiO2

Density Functional Theory Study Of Hypothetical PbTiO3-Based Oxysulfides

A first-principles study of the electronic and structural properties of Sb and F doped SnO2 nanocrystals

First-principles Lattice Dynamics and Thermodynamic Properties of Pre-Perovskite PbTiO3

Optical Properties and Boron Doping-Induced Conduction-Type Change in SnO 2 Thin Films

Managing Interfacial Defects and Charge-Carriers Dynamics by a Cesium-Doped SnO2 for Air Stable Perovskite Solar Cells

Effects of hydrogen doping on the phase structure and optoelectronic properties of p-type transparent SnO

Conversion of p-type SnO to n-type SnO 2 via oxidation and the band offset and rectification of an all-Tin oxide p-n junction structure