Abstract:Silicon carbide (SiC) is one of the most promising wide-band gap semiconductors for future technological applications, with the potential for high-temperature and low-loss photonic devices. In this study, we investigated the ultrafast visible light all-optical switching in 6H-SiC, in which nondegenerate two-photon absorption appeared to be dominant. Using an 820 nm femtosecond laser beam as the modulation source, differential transmission on the order of 10% was achieved across the visible spectrum from 420 to 720 nm with the highest modulation depth reaching 27%. The dependence of the optical switching performance on wavelength, fluence, and polarization has been illustrated and analyzed in details. Our results provide an in-depth guideline for exploring SiC, of which the nonlinear optical properties could help to realize ultrafast all-optical switching devices in the visible regime.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsphotonics.1c00605.AFM topography image of the 6H-SiC sample; XRD graph of the 6H-SiC; Linear absorption spectrum of 6H-SiC; Long decay time of the free carrier effect; Transient differential transmission signal for different probe wavelengths; First pump propagation cycle inside the sample; Pulse widths and the spot sizes of the pump and the probe and the calculated instrument response functions; Reflectance change induced by the nonlinear effect in the optical switching of the 6H-SiC; Dependence of (−ΔT/T)max on the probe fluence; Dependence of (−ΔT/T) on the crystal orientation; Dependence of the fwhm on the pump fluence; Dependence of (−ΔT/T)max on the pump fluence for long pump and probe wavelengths (PDF)This article has not yet been cited by other publications.

Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent

Ultrafast response of cubic silicon carbide to intense attosecond pulse light

Registration of Terahertz Irradiation with Silicon Carbide Nanostructures

Silicon carbide--a high-transparency nonlinear material for THz applications

Nonlinear optical properties of 6H-SiC and 4H-SiC in an extensive spectral range

Nonlinear Regulation on Silicon Photonic Chips Based on Sb2Se3 Thin Films

Ultrafast All-Optical Switching in the Visible Spectrum with 6H Silicon Carbide

Revealing the frequency-dependent oscillations in the nonlinear terahertz response induced by the Josephson current

Revealing the frequency-dependent oscillations in nonlinear terahertz response induced by Josephson current

Nonlinear Optical Absorption and Ultrafast Optical Response of Un-Doped and P-doped Nanocrystalline Si/SiO2 Multilayers

Broadband Ultrafast Photoresponse Of 1d And 2d Semiconductors

Colloidal doped semiconductor nanocrystals embedded in one‐dimensional photonic crystals for ultrafast photonics

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

Phase-sensitive pump-probe measurement of the complex nonlinear susceptibility of silicon across the direct band edge

Emission of terahertz radiation from SiC

Terahertz third harmonic generation in c-axis La$_{1.85}$Sr$_{0.15}$CuO$_4$

Modelling ultrafast non-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal Silicon-Carbide with femtosecond laser pulses

Type-II Second-Order Nonlinear Processes in Silicon Carbide Nanophotonic Waveguides

Terahertz emission from silicon carbide nanostructures