Abstract:In this article, we present AlGaN/GaN-based lateral Schottky barrier diodes (SBDs) on sapphire substrate with fully recessed anodes and a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vphantom{_{\int}}$</tex-math> </inline-formula> high-permittivity field plate (FP). A specific ON-resistance of 3.2 m <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega$</tex-math> </inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot$</tex-math> </inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> , an on/off current ratio of 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{10}}$</tex-math> </inline-formula> , and a reverse breakdown voltage (BV) of 2.5 kV are simultaneously achieved for the device with the anode-to-cathode space of 30 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula> m. This yields a Baliga’s power figure-of-merit (BFOM) of 1.95 GW/cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> . Our fabricated device shows that the leakage current is hardly affected by the reverse bias. It is because the electric field is pushed apart from the Schottky contact region by the high-permittivity FP. This causes the absence of the defect-related carrier tunneling effect at the Schottky contact region. Meanwhile, the high-permittivity FP helps extend the depletion effect for the drift region and gives rise to the increased BV.

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2.5 kV/1.95 GW/cm<inline-formula> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-<italic>k</italic> Field Plate to Reduce Reverse Current

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A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

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High-Voltage Algan/Gan-Based Lateral Schottky Barrier Diodes

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On the coupled effect of a MIS-based anode and AlGaN-polarized super-junction to reduce the local electric field for AlGaN/GaN Schottky barrier diodes

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High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination