Improving the Efficiency of Silicon Solar Cells Using in Situ Fabricated Perovskite Quantum Dots As Luminescence Downshifting Materials

Linghai Meng,Xian-Gang Wu,Sai Ma,Lifu Shi,Mengjiao Zhang,Lingxue Wang,Yu Chen,Qi Chen,Haizheng Zhong
DOI: https://doi.org/10.1515/nanoph-2019-0320
IF: 7.5
2020-01-01
Nanophotonics
Abstract:Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr3) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (ηLDS) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.
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