CH3NH3PbBr3 Quantum Dot-Induced Nucleation for High Performance Perovskite Light-Emitting Solar Cells.

Peng Wang,Jiangsheng Xie,Ke Xiao,Haihua Hu,Can Cui,Yaping Qiang,Ping Lin,V Arivazhagan,Lingbo Xu,Zhengrui Yang,Yuxin Yao,Tao Lu,Zihan Wang,Xuegong Yu,Deren Yang

DOI: https://doi.org/10.1021/acsami.8b06595

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:Solution-processed organometallic halide perovskites have obtained rapid development for light-emitting diodes (LEDs) and solar cells (SCs). These devices are fabricated with similar materials and architectures, leading to the emergence of perovskite-based light-emitting solar cells (LESCs). The high quality perovskite layer with reduced nonradiative recombination is crucial for achieving a high performance device, even though the carrier behaviors are fundamentally different in both functions. Here CH3NH3PbBr3 quantum dots (QDs) are first introduced into the antisolvent in solution phase, serving as nucleation centers and inducing the growth of CH3NH3PbI3 films. The heterogeneous nucleation based on high lattice matching and a low free-energy barrier significantly improves the crystallinity of CH3NH3PbI3 films with decreased grain sizes, resulting in longer carrier lifetime and lower trap-state density in the films. Therefore, the LESCs based on the CH3NH3PbI3 films with reduced recombination exhibit improved electroluminescence and external quantum efficiency. The current efficiency is enhanced by 1 order of magnitude as LEDs, and meanwhile the power conversion efficiency increases from 14.49% to 17.10% as SCs, compared to the reference device without QDs. Our study provides a feasible method to grow high quality perovskite films for high performance optoelectronic devices.