Abstract:Robust, void-free Cu electrodeposition in high-aspect ratio features relies on careful tuning of electrolyte additives, concentrations, and electrochemical parameters for a given feature dimension or wafer pattern. Typically, Cu electrodeposition in electronics manufacturing of microscale or larger features (i.e., microvias, through-holes, and high-density interconnects) employs a CuSO 4 –H 2 SO 4 electrolyte containing millimolar levels of chloride and, at a minimum, micromolar levels of a polyether suppressor. Research and optimization efforts have largely focused on the relationship between electrolyte additives and growth morphology, with less attention given to the impact of supporting electrolyte. Accordingly, a computational study exploring the influence of supporting electrolyte on Cu electrodeposition in microvias is presented herein. The model builds upon prior experimental and computational research on localized Cu deposition by incorporating the full charge conservation equation with electroneutrality to describe potential variation in the presence of ionic gradients. In accord with experimental observations, simulations predict enhanced current localization to the microvia bottom as H 2 SO 4 concentration is decreased. This phenomenon derives from enhanced electromigration within recessed features that accompanies the decrease of conductivity with local metal ion depletion. This beneficial aspect of low acid electrolytes is also impacted by feature density, CuSO 4 concentration, and the extent of convective transport.

Inhibition Effect of CTAB on Electrodeposition of Cu in Micro Via: Experimental and MD Simulation Investigations

Influence of Electroplating Current Density on Through Silicon Via Filling

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Numerical Model with Competitively Adsorptive Mechanism for Copper Electrodeposition of TSV

Dual Effects of CTAB on Co-deposition of SiC/Cu in Micro Via

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Experimental Analysis Of The Co-Deposition Of Metal Cu And Nano-Sized Sic Particles With Ctab In Micro Via Filling

Structural Effect of Inhibitors on Adsorption and Desorption Behaviors During Copper Electroplating for Through-Silicon Vias

Communication-Effects of Molecular Structures of Quaternary Ammonium Inhibitors on Cu Electrodeposition in Micro Via

Communication-Fast Bottom-Up Filling of High Aspect Ratio Micro Vias Using a Single CTAB Additive

Effect of Cetyl-Trimethyl-ammonium-bromide (CTAB) and Bis (3-Sulfopropyl) Disulfide (SPS) on the Through-Silicon-via (TSV) Copper Filling

Influence of Convection-Dependent Adsorption of Additives on Microvia Filling by Copper Electroplating

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Effect of current density on microstructure and mechanical property of Cu micro-cylinders electrodeposited in through silicon vias

Simulating the Influence of Supporting Electrolyte Concentration on Copper Electrodeposition in Microvias

Evaluating the Via Filling Performance with Thin Surface Cu by the Synergistic Effect of Different Additives

Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

Tetraoxa-Diphosphaspiro Derivative As Suppressor For Microvia Filling By Copper Electroplating In Acidic Solution

Electrochemical behaviors of additives in high Cu(II) concentration solution for high-aspect-ratio through ceramic holes filling