Abstract:Phase‐change materials (PCMs) show a large property contrast that is exploited in memory storage. Fragile‐to‐strong transitions (FST) aid the application of PCMs, as ultrafast crystallization and amorphous phase stability are simultaneously realized. Here, for the PCM Ge3Sb6Te5 the viscosity is measured over sixteen orders of magnitude, clearly demonstrating an FST. Chalcogenide phase‐change materials combine a remarkable set of properties that makes them promising candidates for future non‐volatile memory applications. Binary data storage exploits the high contrast in electrical and optical properties between the covalent amorphous and metavalent crystalline phase. Here the authors perform an analysis of the liquid phase kinetics of the phase‐change material Ge3Sb6Te5, which is the key to ultrafast switching speeds. By employing four experimental techniques, the viscosity is measured over sixteen orders of magnitude despite its propensity for fast crystallization. These measurements reveal that the liquid undergoes a transition in viscosity–temperature dependence associated with a liquid–liquid phase transition. The system exhibits a shallow viscosity change with temperature near the glass transition which stabilizes the memory cells in the amorphous state and which limits the severity of relaxation processes. Meanwhile, when heated during the writing process, the fragility increases to more than double, causing the viscosity to drop rapidly enabling a nanosecond crystallization speed. This change in viscosity–temperature dependence is highly unusual among glass forming liquids and is reminiscent of the behavior of water. This viscosity transition is also key to the technological success of phase‐change materials for computer memory applications.

Kinetics features conducive to cache-type non-volatile phase-change memory

Kinetics Features Conducive to Cache-Type Nonvolatile Phase-Change Memory

Recipe for ultrafast and persistent phase-change memory materials

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Toward the Speed Limit of Phase-Change Memory

Special Kinetics Features of Scandium Antimonide Thin Films Conducive to Swiftly Embedded Phase-Change Memory Applications

Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

Simultaneously Introducing Tetrahedral and Pseudo-Octahedron by Single-Element Doping Enables Faster and More Stable Phase Change Memory

Nanoscale Chemical Heterogeneity Ensures Unprecedently Low Resistance Drift in Cache-Type Phase-Change Memory Materials.

Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

Chemical Design Principles for Cache-Type Sc–Sb–Te Phase-Change Memory Materials

Ultrahigh overall-performance phase-change memory by Yttrium dragging

Nano-composite phase-change antimony thin film for fast and persistent memory operations

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Fragile‐to‐Strong Transition in Phase‐Change Material Ge3Sb6Te5

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Scandium Doped Ge2Sb2Te5 for High-Speed and Low-Power-consumption Phase Change Memory

Y-Doped Sb2Te3 Phase-Change Materials: Toward a Universal Memory

Introducing Spontaneously Phase‐Separated Heterogeneous Interfaces Enables Low Power Consumption and High Reliability for Phase Change Memory

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3