Abstract:Phase-change materials are among the leading candidates that satisfy the need for in-memory computing or computational memory. Ge2Sb2Te5 (GST) is the representative material among them, but amorphous resistance drift in GST limits its cyclable stability. Here, we optimize the properties and microstructure of a GST material by introducing a BiSb phase. Results reveal that the amorphous resistance of GST decreases after the addition of BiSb and the drift coefficient can be reduced to 0.004 because of the decreased disorder in the amorphous state. Further analysis of microstructural characteristics reveals that the distribution of the Bi-Sb phase restrains the diffusion of Sb/Te element and suppresses the formation of voids in GST phases. These features stabilize the nanostructures and suppress resistance drift to a certain extent because of the dual-phase coexistence. Moreover, the conduction of GST compounds changes from a p-type to an n type, originating from n-type BiSb precipitations. Notably, resistance drift can be further decreased through liquid nitrogen treatment, which restricts atomic mobility in small volumes, changes electron binding energy, and improves the stability of amorphous phases during structural relaxation. Decrease in resistance drift originates from the narrowing of the band gap from 0.65 eV for GST to 0.33 eV for (BiSb)5.1(GST)94.9. Thus, our present research shows that doping GST with BiSb is one of the effective means to obtain ultralow resistance shift in phase-change neuron synaptic devices. (C) 2021 Elsevier B.V. All rights reserved.

Nanoscale Chemical Heterogeneity Ensures Unprecedently Low Resistance Drift in Cache-Type Phase-Change Memory Materials.

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Ultrahigh overall-performance phase-change memory by Yttrium dragging

Introducing Spontaneously Phase‐Separated Heterogeneous Interfaces Enables Low Power Consumption and High Reliability for Phase Change Memory

Multi-step Phase-Change Behavior in Ga30Sb70/SnSe2 Nanocomposite Multilayer Thin Films

Low Thermal Conductivity in Ge2Sb2Te5–SiOx for Phase Change Memory Devices

Phase Transition Behaviors of Ga30Sb70/Sb80Te20 Nanocomposite Multilayer Films for Application in Phase Change Random Access Memory

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Kinetics features conducive to cache-type non-volatile phase-change memory

Resistance Drift Suppression Utilizing GeTe/Sb2Te3 Superlattice‐Like Phase‐Change Materials

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

Monatomic 2D phase-change memory for precise neuromorphic computing

Chemical Design Principles for Cache-Type Sc–Sb–Te Phase-Change Memory Materials

Understanding Phase-Change Materials with Unexpectedly Low Resistance Drift for Phase-Change Memories

Nano-composite phase-change antimony thin film for fast and persistent memory operations

Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices

Unveiling structural characteristics for ultralow resistance drift in BiSb- Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> materials for phase-change neuron synaptic devices

Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping

Reliable 2D Phase Transitions for Low-Noise and Long-Life Memory Programming