Abstract:Non-volatile memory, which can simultaneously store data and compute in memory, is a promising candidate to break through “memory bottleneck”. However, its operation speed and thermal stability are still contradictory and difficult to meet the requirement of in-memory computing especially in high-temperature applications. In this work, optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 material is proposed, where the picosecond laser is used to perform the information recording/erasing operation based on the reversible phase-change characteristics while resistance signal is detected to realize the information readout. Results imply that the Cr doped Ge2Sb2Te5 film with Cr concentration of 10.7 at. % has high crystallization temperature (289 °C) and ten-year data-retention temperature (221 °C), low density-change rate (2.3%) and small resistance drift coefficients (0.022 at 85 °C, 0.056 at 120 °C, 0.070 at 150 °C, and 0.00131 for the laser induced SET state). The corresponding memory device has the SET/RESET operation speeds of as fast as 1820 ps/13 ps accompanied by the RESET/SET resistance ratio of higher than two orders of magnitude. The structural analyses indicate that Cr doping can suppress the growth of grains and reduce the grain size, improving the thermal stability of amorphous Ge2Sb2Te5 thin film while the octahedral/defective octahedral motif ensures its fast phase-change speed. Therefore, Cr doped Ge2Sb2Te5 based optoelectronic hybrid phase-change memory with superior thermal stability and ultrafast operation speed may be one of the promising solutions for in-memory computing.

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Toward the Speed Limit of Phase-Change Memory

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Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application

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Ab initio molecular dynamics and materials design for embedded phase-change memory

Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

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Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

C-Sb Materials As Candidate for Phase-Change Memory

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Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film