Spatially Resolved Polarization Manipulation of Ferroelectricity in Twisted hBN

Ming Lv,Xinzuo Sun,Yan Chen,Takashi Taniguchi,Kenji Watanabe,Menghao Wu,Jianlu Wang,Jiamin Xue
DOI: https://doi.org/10.1002/adma.202203990
IF: 29.4
2022-10-23
Advanced Materials
Abstract:Robust room‐temperature interfacial ferroelectricity has been formed in the two‐dimensional (2D) limit by simply twisting two atomic layers of non‐ferroelectric hexagonal boron nitride (hBN). A thorough understanding of this newly discovered ferroelectric system is required. Here, we used the twisted hBN as a tunneling junction and studied it at the nanometer scale using a conductive atomic force microscope. Three properties unique to this system were discovered. First, the polarization dependence of the tunneling resistance contrasts with the conventional theory. Second, the ferroelectric domains can be controlled using mechanical stress, highlighting the original meaning of the emergent "slidetronics". Third, ferroelectric hysteresis is highly spatially dependent. The hysteresis is symmetric at the domain walls. A few nanometers away, the hysteresis shifts completely to the positive or negative side, depending on the original polarization. These findings reveal the unconventional ferroelectricity in this 2D system. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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