Readable High-Speed Racetrack Memory Based on an Antiferromagnetically Coupled Soft/Hard Magnetic Bilayer

Ziyang Yu,Chenhuinan Wei,Fan Yi,Rui Xiong
DOI: https://doi.org/10.3390/nano9111538
IF: 5.3
2019-01-01
Nanomaterials
Abstract:The current-induced domain wall (DW) motion in a racetrack memory with a synthetic antiferromagnets (SAFs) structure has attracted attention because of the ultrahigh velocity of the DW. However, since there is little stray field due to the zero net magnetization in a pair of antiferromagnetically (AFM) coupled domains, how to read the information stored in the pair of domains is still challenging. In the present work, we propose a readable SAF racetrack memory composed of two ferromagnetic (FM) layers with distinct uniaxial-anisotropy constants. As a result, a region of staggered domains formed between two neighboring DWs in the two layers. In this region, there is a parallel alignment of the moments in the two FM layers. This parallel magnetization is readable and can be exploited to label the structure of the nearby AFM-coupled domains for the racetrack with DWs moving in a fixed direction. This function can be realized by connecting a Schmitt Trigger to a sensor for reading. The stability and the length of the staggered region can be well-tuned by changing the magnetic parameters, such as the interlayer exchange coupling constants, the Dzyaloshinskii–Moriya interaction (DMI) constants, and the uniaxial-anisotropy constants of the two FM layers, in a range that is experimentally achievable.
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